Influence of external load on friction coefficient of Fe-polytetrafluoroethylene

A coarse-grained molecular dynamics simulation model was developed in this study to investigate the friction process occurring between Fe and polytetrafluoroethylene(PTFE).We investigated the effect of an external load on the friction coefficient of Fe–PTFE using the molecular dynamics simulations and experimental methods.The simulation results show that the friction coefficient decreases with the external load increasing,which is in a good agreement with the experimental results.The high external load could result in a larger contact area between the Fe and PTFE layers,severer springback as a consequence of the deformed PTFE molecules,and faster motion of the PTFE molecules,thereby affecting the friction force and normal force during friction and consequently varying the friction coefficient.     

Identifying anomalous Floquet edge modes via bulk-edge correspondence

Floquet engineering appears as a new protocol for designing topological states of matter,and features anomalous edge modes pinned at quasi-energy π/T with vanished topological index.We propose how to predict the anomalous edge modes via the bulk Hamiltonian in frequency space,and use Zak phase to quantitatively index the topological properties.The above methods are clarified by the example of time periodic Kitaev chain with chemical potential of harmonic driving and pulse driving,and topological phase transitions are manifested at different driving frequencies.     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.     

基于长短时记忆神经网络的能谱核素识别方法

针对新兴的能谱核素识别方法在混合放射性核素的噪声环境中存在识别速度慢、准确率较低等问题,提出了基于长短时记忆神经网络（LSTM）的能谱核素识别方法。实验使用溴化镧（LaBr₃）晶体探测器,分别对环境中⁶⁰Co、¹³⁷Cs放射性源分组测量得到能谱数据集,首先使用数据平滑方法和归一化方法进行数据预处理,然后将能谱数据按时间序列分组以获得可用的输入序列数组,最后训练LSTM模型得到预测结果。通过基于BP神经网络和卷积神经网络（CNN）的两个能谱识别模型进行对比,得到在测试集中平均识别率分别为83.45%和86.21%,而LSTM能谱识别模型平均识别率为93.04%,实验结果表明,该能谱模型在核素识别效果中表现较好,可用于快速的能谱核素识别设备上。     

用刚体理论分析烟囱倒下的断点位置

烟囱倾倒的过程中将会在某处发生断裂.通过刚体理论知识,采用圆台模型分析了烟囱倾倒过程中的动力学过程,通过理论推导找到极值点,理论上推断出烟囱断裂的位置.     

Quantum Scars in Microwave Dielec trie Photonic Graphene Billiards

Brillouin zone.The closed graphene system has proven to be the ideal model to investigate relativistic quantum chaos phenomena.The electromagnetic material photonic graphene(PG)and electronic graphene not only have the same structural symmetry,but also have the similar band structure.Thus,we consider a stadium shaped resonant cavity filled with PG to demonstrate the relativistic quantum chaos phenomenon by numerical simulation.It is interesting that the relativistic quantum scars not only are identified in the PG cavities,but also appear and disappear repeatedly.The wave vector difference between repetitive scars on the same orbit is analyzed and confirmed to follow the quantization rule.The exploration will not only demonstrate a visual simulation of relativistic quantum scars but also propose a physical system for observing valley-dependent relativistic quantum scars,which is helpful for further understanding of quantum chaos.     

Determination of structure parameters in strong-field ionization models of atoms

The Ammosov–Delone–Krainov (ADK) and Perelomov–Popov–Terent’ev (PPT) ionization models were widely used in strong-field physics and attosecond science due to their many attractive advantages such as simpler analytical formula, less computational demands, and satisfied accuracy of ionization rate. Based on the density-functional theory, we systematically determine accurate structure parameters of 25 atoms, 24 positive ions and 13 negative ions and tabulate for future applications. The wave function with correct asymptotic behavior is obtained by solving the time-independent Schrödinger equation with B-spline basis sets and the accurate structure parameters are extracted from this wave function in the asymptotic region. The accuracies of structure parameters are carefully examined by comparing the ionization probabilities (or yields) calculated by PPT and ADK models with those of solving the three-dimensional time-dependent Schrödinger equation and the experimental data.     

Identity-Based Quantum Designated Verifier Signature

International Journal of Theoretical Physics - Designated verifier signatures are very useful in the applications such as e-voting and auction. In this paper, an identity-based quantum designated...     

Al2O3衬底无催化剂生长GaN纳米线及其光学性能

采用一种绿色的等离子增强化学气相沉积法,以Al2O3为衬底, Ga金属为镓源, N2为氮源,在不采用催化剂的情况下,成功制备获得了结晶质量良好的GaN纳米线.研究表明,生长温度可显著调控GaN纳米线的形貌,当反应温度为950℃时,生长出的GaN微米片为六边形;当反应温度为1000℃时,生长出了长度为10-20μm的超长GaN纳米线.随着反应时间增加, GaN纳米线的长度增加. GaN纳米线内部存在着压应力,应力大小为0.84 GPa.同时,也进一步讨论了GaN纳米线无催化剂生长机制. GaN纳米线光致发光结果显示, GaN纳米线缺陷较少,结晶质量良好,在360 nm处有一个较为尖锐的本征发光峰,可应用于紫外激光器等光电子器件.本研究结果将为新型光电器件低成本绿色制备提供一个可行的技术方案.     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.