混合工质变浓度空调系统动态特性的模拟

本文在分析混合工质变浓度空调系统的传热传质和参数间的相互耦合关系的基础上,以实际流体的质量、动量和能量守恒方程为基础,结合系统各部件的特点,分别建立了各部件的数学模型,并实现了对系统动态特性的模拟计算和分析。     

从电子上看康普顿效应

在康普顿效应中，散射光子与入射光子的频率不同，但在电子静止的参考系，可以证明光子的频率在碰撞前后相同。     

槲皮素包裹修饰硅包银纳米颗粒作为荧光传感器对铜离子的识别作用

制备了一种基于天然产物槲皮素接枝硅包银核壳结构的纳米荧光传感器(Ag@SiO₂@Qc),对铜离子具有好的选择性和灵敏性。Ag@SiO₂@Qc与Cu2+离子结合后,荧光发射强度发生猝灭,并且可通过荧光滴定光谱得到了荧光滴定曲线：y = -32.864x+587.59(R2=0.998),其线性范围分别为：3×10-7~4.8×10-6 mol·L-1,最低检测限为1.0×10-7 mol·L-1。并且将Ag@SiO₂@Qc应用于环境中水样的检测结果的准确度好,精密度高,而且更加环保、方便、快捷,具有很大发展潜力与应用价值。     

Misalignment tolerance analysis and fabrication for highly efficient parallel optical-electrical convertor module

A compact, highly efficient, and passively assembled parallel optical-electrical convertor module (POECM) for active optical cable application is proposed. This paper presents our POECM structure, optical design simulation results, fabrication process, and data transmission test results, in sequence. The POECM has a compact size of \(18.5\hbox {mm} \times 10\hbox {mm} \times 2.8\hbox {mm}\) . We confirm a data rate of total throughput at 21.6 Gbps ( \(5.4\hbox {Gbps} \times 4\) channels) with a bit error rate of less than \(10^{-12}\) .     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

Parameter determination from current–voltage characteristics of HgCdTe photodiodes in forward bias region

Current–voltage characteristics of HgCdTe photodiodes in the forward bias region have been modeled considering mechanisms including drift-diffusion current, recombination current, metal-semiconductor contact and constant series resistance. Moreover, a fitting method based on the genetic algorithm has been developed to obtain values of related physical parameters from the measured dynamic resistance–voltage curves. Fitting results of $n^+$ -on- $p$ planar devices with different cutoff wavelengths are presented to illustrate the model and method, which are available and promising in acquiring device parameter values and evaluating the electrode contact quality.     

微波辐照活性炭床同时脱除SO2和NOx实验研究

论文进行了微波辐照活性炭同时脱硫脱硝实验,研究了烟气中不同组分对脱硫脱硝效率的影响。结果表明,高浓度SO₂对脱硝有轻微抑制。NO对脱硫有一定程度的促进;烟气中O₂的加入对脱硫脱硝均有促进作用;而含湿量的增加首先会使脱硫脱硝效果提高,当含湿量增至9.1%时,脱硫脱硝效率均有下降趋势;烟气中加入CO₂后,脱硫脱硝效率均下降,在氧含量为10%时,脱硫效率下降6%,脱硝效率下降7%。BET测试表明,微波辐照活性炭后其表面积与基炭相比有少量下降。     

近红外光谱相关系数法用于快速检测药品的质量

对近红外光谱相关系数法检测药品质量变化的效果进行了研究,并考察了相关系数方法对同一品种药品来自不同厂家生产的样品的区分能力进行了计算,还研究了在不同仪器上、由不同人员测定光谱时相关系数方法的识别能力。本文还对计算相关系数时的光谱预处理方法和谱段等参数进行了探讨,提供了建议性的参数条件,为近红外光谱相关系数方法用于药品质量快速分析提供参考。     

Lattice Bhatnagar-Gross-Krook Simulations of Hydromagnetic Double-Diffusive Convection in a Rectangular Enclosure with Opposing Temperature and Concentration Gradients

The temperature-concentration lattice Bhatnagar-Gross-Krook （TCLBGK） model with a robust boundary scheme is developed for two-dimensional hydromagnetic double-diffusive convective flow of a binary gas mixture in a rectangular enclosure, in which the upper and lower walls are insulated, while the left and right walls are constant temperature and constant concentration, and a uniform magnetic field is applied in the x-direction. In the model the velocity, temperature and concentration fields are solved by three independent LBGK equations, which are combined into a coupled equation for the whole system. In our simulations, we take the Prandtl number Pr = 1.0, the Lewis number Le = 2.0, the thermal Rayleigh number RaT = 10^5, and the aspect ratio A = 2 for the enclosure. The numerical results are found to be in good agreement with those of previous studies.     

Effects of High Pressure on BC3

High-pressure phases of BC3 are studied within the local density approximation under the density functional theory framework. When the pressure reaches 20 GPa, the layered BC3 that is a semiconductor at ambient pressure, becomes metallic. As the pressure increases, the material changes into a network structure at about 35 GPa. To understand the mechanism of phase transitions, band structure and density of states are discussed. With the increase of pressure, the width of bands broadens and the dispersion of bands enlarges. Additionally, the density of states of the network bears great resemblance to that of diamond. Formation of the sp3 bonding in the network is the main reason for the structural transformation at 35 GPa.