Electrochemical switching in reducible lariat ethers: From cation binding enhancements to electrochemically-mediated transport

The evolution of lariat ethers from relatively simple, substituted crown ethers into electrochemically sensitive ligands is presented. Although nitrogen-pivot lariats were observed to be better binders than the corresponding parent crowns and to retain considerable flexibility after complexation, overall stability constants were not favorable for cation transport applications. This led to the syntheses of nitrobenzene- and anthraquinone-substituted systems capable of reversible redox behavior and drastically enhanced cation binding abilities when reduced. Application of these in enhanced cation transport processes has been demonstrated.     

Precise nonselective chemically assisted ion-beam etching of AlGaAs/GaAs Bragg reflectors byin situ laser reflectometry

Precision etch-depth control is realized by a chemically assisted ion-beam etching system incorporated within situ laser reflectometry. By counting the number of interference fringes, etch-depth control better than a quarter-wave thickness is easily obtained. Optimized etching conditions for highly anisotropic etching of bulk GaAs and AlGaAs/GaAs distributed Bragg reflectors are obtained. With the ability to etch-stop just below the active region by thein situ monitoring, InGaAs vertical-cavity surface-emitting lasers with CW threshold current density as low as 380 A cm^-2 with output power >11 mW are fabricated. Spatial uniformity is 5% over a 1-cm² sample, which corresponds to one pair over 20 pairs of quarter-wave stacks of AlGaAs/GaAs distributed Bragg reflectors.     

Self-assembled arrays of zinc oxide nanoparticles from monolayer films of diblock copolymer micelles

A hexagonal array of optically active ZnO nanoparticles was synthesized in situ on the solid substrate by utilizing a single-layered film of diblock copolymer micelles as a nanostructured template.     

Structural and interfacial stabilities of epitaxial (11-20)-oriented wurtzite AlN films grown on lattice-matched MnS buffered Si(100)

Epitaxial growth of non-polar wurtzite (11-20) AlN thin films was achieved on a Si(100) substrate by inserting an MnS buffer layer. The a-plane AlN film and MnS buffer layer were fabricated by pulsed KrF excimer laser deposition, and their micro- and interfacial atomic structures were investigated by transmission electron microscopy. The epitaxial relationship between films and substrate was found to be AlN(11-20)MnS(100)Si(100) with in-plane alignment of AlN[1-101]MnS[011]Si[011]. AlN[11-20] grown on Si is perpendicular to AlN[0001] and parallel to MnS[100]. The MnS/Si interface is abrupt enough to inherit the orientation of the Si(100) surface. A sharp interface was also observed for AlN/MnS without any intermediate layer. PACS 81.05.Ea; 81.05.Zx; 81.15.Fg; 68.37.Lp     

High-definition PIV analysis on vortex shedding in the cylinder wake

A high-definition analysis based on flow topology is made on the vortex motions under natural and lock-on conditions in the near-wake region of a circular cylinder, where two-dimensional flow fields in the wake-transition regime are measured by a time-resolved PIV system. The Reynolds stress distributions are examined in view of the mean separation streamline and the trajectory ofthe vortex center. It is shown that, by the lock-on, the Reynolds stresses become stronger and their dispositions match well with the shortened wake bubble, indicating perfect synchronization of shedding to the oscillatory forcing flow in the near field, which causes increased lift and drag forces.     

Highly enantioselective phase-transfer catalytic alkylation in the preparation of non-natural alpha-amino acids via solid phase synthesis using aldimine linker

A new Merrifield-resin-derived glycinimine tert-butyl ester (9) was prepared and applied to the enantioselective synthesis of non-natural alpha-amino acids. High enantioselectivities (86 to >99% ee) were accomplished by employing the aldimine linker under phase-transfer alkylation conditions, using 50% aqueous CsOH in toluene/chloroform (7:3) at 0 degrees C in the presence of N-(9-anthracenylmethyl)-O(9)-allylcinchonidium bromide (10 mol %).