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Using a streak camera we have measured the three Stokes polarization parameters during a polarization switch of a vertical-cavity semiconductor laser. The switch occurs along a corkscrew path on the Poincare sphere and takes on average a few nanoseconds; this value agrees with a theoretical treatment based upon the Fokker-Planck equation. 相似文献
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Edleman NL Wang A Belot JA Metz AW Babcock JR Kawaoka AM Ni J Metz MV Flaschenriem CJ Stern CL Liable-Sands LM Rheingold AL Markworth PR Chang RP Chudzik MP Kannewurf CR Marks TJ 《Inorganic chemistry》2002,41(20):5005-5023
A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric Ce, Nd, Gd, and Er complexes are coordinatively saturated by a versatile, multidentate ether-functionalized beta-ketoiminato ligand series, the melting point and volatility characteristics of which can be tuned by altering the alkyl substituents on the keto, imino, and ether sites of the ligand. Direct comparison with conventional lanthanide beta-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO(2) buffer layer films can be grown on (001) YSZ substrates by MOCVD at significantly lower temperatures (450-650 degrees C) than previously possible by using one of the newly developed cerium beta-ketoiminate precursors. Films deposited at 540 degrees C have good out-of-plane (Deltaomega = 0.85 degrees ) and in-plane (Deltaphi = 1.65 degrees ) alignment and smooth surfaces (rms roughness approximately 4.3 A). The film growth rate decreases and the films tend to be smoother as the deposition temperature is increased. High-quality yttrium barium copper oxide (YBCO) films grown on these CeO(2) buffer layers by pulsed organometallic molecular beam epitaxy exhibit very good electrical transport properties (T(c) = 86.5 K, J(c) = 1.08 x 10(6) A/cm(2) at 77.4 K). 相似文献
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Bellotti R Cafagna F Circella M De Cataldo G De Marzo CN Giglietto N Spinelli P Golden RL Stephens SA Stochaj SJ Webber WR De Pascale MP Morselli A Picozza P Ormes JF Streitmatter RE Massimo Brancaccio F Papini P Piccardi P Spillantini P Basini G Bongiorno F Ricci M Brunetti MT Codino A Grimani C Menichelli M Salvatori I 《Physical review D: Particles and fields》1996,53(1):35-43
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Anchuan Wang John A. Belot Tobin J. Marks Paul R. Markworth Robert P. H. Chang Michael P. Chudzik Carl R. Kannewurf 《Physica C: Superconductivity and its Applications》1999,320(3-4):154-160
Smooth, epitaxial cerium dioxide thin films have been grown in-situ in the 450–650°C temperature range on (001) yttria-stabilized zirconia (YSZ) substrates by metal–organic chemical vapor deposition (MOCVD) using a new fluorine-free liquid Ce precursor. As assessed by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy (HREM), the epitaxial films exhibit a columnar microstructure with atomically abrupt film-substrate interfaces and with only minor bending of the crystal plane parallel to the substrate surface near the interface and at the column boundaries. With fixed precursor temperature and gas flow rate, the CeO2 growth rate decreases from 10 Å/min at 450°C to 6.5 Å/min at 540°C. The root-mean-square roughness of the films also decreases from 15.5 Å at 450°C to 4.3 Å at 540°C. High-quality, epitaxial YBa2C3O7−x films have been successfully deposited on these MOCVD-derived CeO2 films grown at temperatures as low as 540°C. They exhibit Tc=86.5 K and Jc=1.08×106 A/cm2 at 77.4 K. 相似文献
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van Tiggelen BA Lagendijk A van Albada MP Tip A 《Physical review. B, Condensed matter》1992,45(21):12233-12243