Study of interdiffusion of Ni/Fe layers by Auger Sputter profiling

Bulk and grain boundary diffusion of Fe into Ni films has been studied under UHV in the temperature range of ?150 to 500°C using AES and sputter profiling methods. The concentration profiles at the interface are corrected for the various broadening and damage effects inherent in ion bombardment. Grain boundary diffusion coefficients are derived on the basis of the Whipple model. The measured activation energies are 46 $\text{kcal}\text{mole}$ for bulk diffusion and 34 $\text{kcal}\text{mole}$ for grain boundary diffusion. An additional migration phenomenon not previously resolved is observed for very thin films annealed at relatively low temperatures (150–250°C). A possible mechanism involved in this initial “interface healing” is discussed.     

强点火作用下C3HF7对甲烷-空气爆炸的抑制

为解决瓦斯输送过程中的爆炸安全问题,探索寻找绿色环保且阻火性能优越的新型抑爆剂,开展了当量比下甲烷-空气预混气体爆炸传播过程中的七氟丙烷抑爆效果研究。实验采用长径比L/D=108的水平管道爆炸特性测试系统,研究了在强点火作用下不同体积分数的七氟丙烷对9.5%甲烷-空气预混气体最大爆炸压力、最大压力上升速率和火焰传播速度的影响。实验结果显示:将2.5 m长的管段作为七氟丙烷抑爆区时,七氟丙烷阻断9.5%甲烷-空气预混气体爆炸火焰传播的最小体积分数为5%;当七氟丙烷的体积分数为1%~4%时,不仅无法阻断爆炸火焰的传播,而且与对照组相比,会使火焰传播速度加快;当七氟丙烷的体积分数为1%~6%时,爆炸源及管道末端处的爆炸压力峰值随着七氟丙烷体积分数的增加而逐渐减小;当七氟丙烷的体积分数为3%时,抑爆区处的爆炸压力峰值与对照组相比增幅为10.9%。     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。     

二维正弦离散映射的分岔和吸引子

由一个正弦映射和一个三次方映射通过非线性耦合,构成一个新的二维正弦离散映射. 基于此二维正弦离散映射得到系统的不动点以及相应的特征值,分析了系统的稳定性,研究了系统的复杂非线性动力学行为及其吸引子的演变过程. 研究结果表明：此二维正弦离散映射中存在复杂的对称性破缺分岔、Hopf分岔、倍周期分岔和周期振荡快慢效应等非线性物理现象. 进一步根据控制变量变化时系统的分岔图、Lyapunov指数图和相轨迹图分析了系统的分岔模式共存、快慢周期振荡及其吸引子的演变过程,通过数值仿真验证了理论分析的正确性. 关键词： 正弦离散映射 对称性破缺分岔 Hopf分岔 吸引子     

State transitions and the continuum limit for a 2D interacting, self-propelled particle system

We study a class of swarming problems wherein particles evolve dynamically via pairwise interaction potentials and a velocity selection mechanism. We find that the swarming system undergoes various changes of state as a function of the self-propulsion and interaction potential parameters. In this paper, we utilize a procedure which connects a class of individual-based models to their continuum formulations and determine criteria for the validity of the latter. H-stability of the interaction potential plays a fundamental role in determining both the validity of the continuum approximation and the nature of the aggregation state transitions. We perform a linear stability analysis of the continuum model and compare the results to the simulations of the individual-based one.     

Terahertz electromagnetic radiation from quantum wells

The observation of terahertz electromagnetic dipole radiation from quantum well structures has finally proven the existence of charge oscillations in semiconductors associated with wave packet dynamics. This article closely examines the physics behind the emission of terahertz electromagnetic radiation from excitonic charge oscillations in such quantum well structures, points out similarities and differences between the various generation schemes, and discusses the various relaxation mechanisms involved. Finally, we show how both amplitude and phase of charge oscillations and the corresponding terahertz emission can be manipulated using phase-locked optical pulses.     

高动态范围图像合成中相机响应函数的快速标定

针对高动态范围图像合成过程中相机响应函数标定速度低的问题,提出了一种快速有效的相机响应函数标定的方法.首先根据不同曝光度的图像在成像过程中场景照度保持一致的特性,提出构建一种新的最小平方代价函数,以降低相机响应函数标定方程组的维数;然后在保证标定方程组求解效率的前提下,根据不同曝光度图像的噪音分布,引入高斯加权函数,有效减小多曝光图像在高亮或过暗区域成像过程中引入的噪音,并利用稳健的QR分解算法提高标定方程组的求解速度;最后采用查表的方法,利用高斯加权函数完成场景照度的合成及相应的色调映射,得到能表现整个场景亮区和暗区细节的可视化图像.实验结果表明,与传统方法相比,本文算法在保证相机响应函数标定准确度的同时,具有计算量小、速度快的优点,可实现相机响应函数的快速标定,而且所获得的可视化图像主观效果有所提高,在便携式摄像设备上具有广泛的应用前景.     

Determining the resistance of X-pinch plasma

The current and the voltage of an X-pinch were measured. The inductance of the X-pinch was assumed to be a constant and estimated by the calculation of the magnetic field based on the well-known Biot-Savart's Law. The voltage of the inductance was calculated with L · di/dt and subtracted from the measured voltage of the X-pinch. Then, the resistance of the X-pinch was determined and the following results were obtained. At the start of the current flow the resistance of the exploding wires is several tens of Ohms, one order of magnitude, higher than the metallic resistance of the wires at room temperature, and then it falls quickly to about 1 , which reflects the physical processes occurring in the electrically exploding wires, i.e., a current transition from the highly resistive wire core to the highly conductive plasma. It was shown that the inductive contribution to the voltage of the X-pinch is less than the resistive contribution. For the wires we used, the wires' material and diameter have no strong influence on the resistance of the X-pinch, which may be explained by the fact that the current flows through the plasma rather than through the metallic wire itself. As a result, the current is almost equally divided between two parallel X-pinches even though the diameter and material of the wires used for these two X-pinches are significantly different.     

塞曼效应与边缘离子温度的光谱测量

通过理论推导得到了谱线实际宽度和塞曼展宽之间的关系。在磁感应强度分别为1、2、2．5和3T的情况下，用数值方法进行了求解，用得到的结果拟合出了校正因子随离子温度变化的经验公式和拟合曲线，结果表明：离子温度较低时，塞曼效应对谱线宽度的影响很大，温度较高时，塞曼效应对谱线宽度的影响可以忽略。