Extraordinary optical transmission through metal gratings with single and double grooved surfaces

We investigate the transmission properties of a normally incident TM plane wave through metal films with periodic parabolic-shaped grooves on single and double surfaces using the finite-difference-time-domain method. Nearly zero transmission efficiency is found at wavelengths corresponding to surface plasmon excitation on a flat surface in the case where the single surface is grooved. Meanwhile, resonant excitation of surface plasmon polariton (SPP) Bloch modes leads to a strong transmission peak at slightly larger wavelengths. When the grating is grooved on double surfaces, the transmission enhancement can be dramatically improved due to the resonant tunnelling between SPP Bloch modes.     

基于微波迈克耳孙干涉仪的傅里叶变换光谱分析实验

基于近代物理实验中微波的迈克耳孙干涉实验方法,在分析傅里叶变换光谱分析原理的基础上,利用微波分光仪首先分离了2个已知微波源的谱分布,并定量分析了最大分辨率与最大光程差、最大测量范围与采样间距之间的关系.     

The interaction of an atmospheric pressure plasma jet using argon or argon plus hydrogen peroxide vapour addition with bacillus subtilis

This paper reports that an atmospheric pressure dielectric barrier discharge plasma jet, which uses argon or argon + hydrogen peroxide vapour as the working gas, is designed to sterilize the bacillus subtilis. Compared with the pure argon plasma, the bacterial inactivation efficacy has a significant improvement when hydrogen peroxide vapour is added into the plasma jet. In order to determine which factors play the main role in inactivation, several methods are used, such as determination of optical emission spectra, high temperature dry air treatment, protein leakage quantification, and scanning electron microscope. These results indicate that the possible inactivation mechanisms are the synergistic actions of chemically active species and charged species.     

丝阵Z箍缩早期消融等离子体动力学的二维数值模拟研究

采用理想磁流体力学模型,给出合理的二维(r, θ)质量注入边界条件,对丝阵Z箍缩早期消融等离子体的动力学过程进行了二维(r, θ)数值模拟研究,得到消融等离子体各参量以及磁场的二维时空分布.模拟结果表明,消融等离子体的运动包括四个主要阶段:首先向轴漂移,然后在轴线处滞止并形成先驱等离子体柱,随后先驱等离子体柱被压缩,最后缓慢膨胀.计算了不同丝阵半径和丝间距情况下消融等离子体到轴速度以及消融质量占丝阵总质量的份额,它们的变化规律与实验结果基本符合.通过 关键词： 丝阵Z箍缩 理想磁流体 消融等离子体     

Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor

Electromagnetic field distribution in the vertical metal organic chemical vapour deposition (MOCVD) reactor is simulated by using the finite element method (FEM). The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the susceptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements.     

355 nm激光作用下苯甲醚的多光子电离质谱研究

在355 nm激光作用下,利用多光子电离技术结合飞行时间质谱(TOF-MS)对苯甲醚分子进行了研究。实验结果表明苯甲醚分子的多光子电离机制属于母体分子电离-解离模型。通过对主要碎片离子的可能形成过程的讨论,得出该波长下母体分子离子解离的主要有两种通道,但是随激光能量的增强,甲基移除通道逐步占据优势成为主要通道。应用高斯软件采用HF/6-31G(d) 方法对苯甲醚分子和苯甲醚阳离子基态的几何构型进行优化得到其稳定构型,并计算了苯甲醚分子离子及其初级解离产物的能量。比较两条通道的碎片离子能量的变化,理论验证了实验中苯甲醚分子主要解离通道的合理性。     

一种双正则项全变差高光谱图像去噪算法

受传感器特性影响,高光谱图像中的噪声在各个维度都有体现。噪声的存在降低了高光谱图像中信息的有效性,在进行地物分类前必须采用适当的算法对噪声予以去除。文章针对高光谱图像的噪声特性,提出了一种基于全变差的高光谱图像去噪算法。该算法将经典二维图像全变差去噪模型推广至三维形式,提出了采用双正则项及相应的调整参数的目标函数,在三维空间中完成新目标函数的离散化,并采用基于优化-最小化算法的迭代方法对目标函数进行优化与求解。对星载Hyperion成像光谱仪数据的实验表明,适当的设置调整参数,该方法可很好地提高高光谱图像的各波段信噪比、平滑光谱曲线并保留细节特征,其去噪效果优于经典的MNF去噪算法及Savitzky-Golay滤波方法。     

TG-FTIR技术对水氯镁石结晶热解过程的研究

水氯镁石脱水是镁资源利用的关键.其中一种重要的方法是向水氯镁石中添加助剂形成复盐及络合物脱水.通过缓慢冷却水氯镁石及盐酸苯胺的过饱和水溶液制备了水氯镁石-盐酸苯胺结晶物.通过TGDTA-FTIR联用技术分析了盐酸苯胺、水氯镁石以及盐酸苯胺-水氯镁石结晶物的热解过程,定性检测每步分解的逸出气体以推测反应过程.结果显示:盐酸苯胺在400℃以前仅发生物理变化;水氯镁石的热解分阶段进行,205℃以前发生脱去四个结晶水,205℃以后在脱水反应的同时发生水解反应生成HCl;盐酸苯胺-水氯镁石结晶物分阶段脱水、脱盐酸苯胺,整个过程没有水解现象发生,能够得到高纯度无水氯化镁.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.