Propagation of microcontinuity for nonstandard polynomials

This paper explores the differences between real and complex microcontinuity for hyperreal polynomials, with hypernatural degree and nonstandard coefficients. On the real line, complex microcontinuity differs from real microcontinuity in replacing the coefficients with their absolute values. Apart from this feature, not much analogy is found between (absolute) convergence of series and (absolute) microcontinuity of infinite polynomials, even if these are infinite partial sums of a standard series. Real microcontinuity may be confined to isolated monalds, whereas complex microcontinuity always propagates a noninfinitesimal distance. An infinite partial sum of a power series can be microcontinuous outside the circle of convergence.     

Transition of 3D to 2D growth modes of InAs grown on GaAs

We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.     

Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

In this paper we outline the use of resonant-cavity enhancement for increasing the exterior coupling efficiency of photodetectors and light-emitting diodes (LEDs) in the mid-infrared (MIR) spectral region. This method is potentially very important in the MIR because encapsulation is not presently feasible due to the lack of suitable materials. Among other potential applications, resonant-cavity-enhanced (RCE) photodetectors and LEDs could be particularly suitable for greenhouse gas detection because of their ‘pre-tunable’ spectrally narrowed resonantly enhanced peaks. We also present the optical characterization of an InAs RCE photodetector aimed at the detection of methane gas (λ≈3.3 μm), and an InAs/InAs_0.91Sb_0.09 resonant-cavity LED (RCLED) aimed at carbon dioxide gas (λ≈4.2 μm). The high peak responsivity of the RCE photodetector was 34.7 A/W at λ=3.14 μm, and the RCLED peaked at λ=3.96 μm. These are among the longest operating wavelengths for III–V RCE photodetectors and RCLEDs reported in the literature.     

Zur Synthese und Struktur von K3N

Synthesis and Structure of K₃N Two phases in the binary system K/N have been obtained via co‐deposition of potassium and nitrogen onto polished sapphire at 77 K and subsequent heating to room temperature. The powder diffraction pattern of one of these phases can be satisfactorily interpreted by assuming the composition K₃N, and the anti‐TiI₃ structure‐type, which is also adopted by Cs₃O. The resulting hexagonal lattice constants are: a = 779.8(2), c = 759.2(9) pm, Z = 2, P6₃/mcm. Comparison with possible structures of K₃N generated by computational methods and refined at Hartree‐Fock‐ and DFT level, reveals that the energetically most favoured structure has not formed (presumable Li₃P‐type), but instead one of those with very low density. In this respect, the findings for K₃N are analogous to the results on Na₃N. The thermal evolution of the deposited starting mixture has been investigated. Hexagonal K₃N transforms to another K/N phase at 233 K. Its XRD can be fully indexed resulting in an orthorhombic cell a = 1163, b = 596, c = 718 pm. Decomposition leaving elemental potassium as the only residue occurs at 263 K.