Systematic analysis of the PSI experiment to directly measure the sticking probabilityω s in dt fusion

Starting in 1989 an experiment was run at PSI to directly measure the final sticking probability in muon catalyzed dt fusion. This experiment was based on an active-target ionization chamber (IC) built at Gatchina, Russia, and an array of plastic neutron counters. In three runs approximately 5×10⁶ isolated alpha signals were recorded with around one half of these occurring in the inner chamber region where we have more complete understanding of the systematic errors. Particularly from a long run in 1992 we were able to obtain a very clean sticking peak of some 5000 events. However, to reach an accurate value of sticking, all systematic effects and several major backgrounds had to be understood in detail. To this end a Monte Carlo code was written to simulate the full electrostatic environment of the IC and to recreate completely each signal type including the actual tritium decay noise from the live experiment. A slightly model dependent value of approx. 0.56±0.04% is obtained for final sticking.     

On the interpretation of random forces derived by projection operators

We study the derivation of a Langevin equation from a microscopic basis in order to elucidate the nature of the random force. We arrive at the conclusion that the consistent interpretation of the microscopic Langevin equation in terms of a stochastic differential equation (SDE) is according to I o rules. In addition, the random force is in general not Gaussian, and it is hence not completely characterized by its second moments.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

Electrical and infrared dielectrical properties of silica aerogels and of silica-aerogel-based composites

In this contribution we have studied the key electrical parameters of silica aerogels and of silica-aerogel-based composites, namely the dielectric constants , the dielectric losses tan (at 1 kHz), and the breakdown fields E _b (at 50 Hz). For low-density bulk silica aerogels we find =1.25 and tan =0.0005. E _b is about 500 kV/cm in quasi-homogeneous fields, and of the order of MV/cm in strongly inhomogeneous fields. The dielectric constants of partially densified aerogels increase linearly with density; their dielectric losses are relatively large and their breakdown fields are comparativiely low. The same results are found for aerogels in the form of settled materials, i.e. aerogel granules and powders in air. Acrylate-based aerogel composites with volume fractions larger than 70% have low dielectric constants but their losses are at least 10 times higher than those of low-density aerogels. These materials sustain high local fields in the MV/cm region, while in quasihomogeneous fields, breakdown occurs at about 100 kV/cm. Based on the present results and the interplay with other physical properties (low mechanical resistance, low thermal conductivity, adsorption of water, etc.), silica aerogels and silica aerogel-acrylate-based composites are predicted to have a low potential for electrical insulation.