Synthesis and characterization of luminescent osmium(II) carbonyl complexes based on chelating dibenzoylmethanate and halide ligands

Octahedral Os(II) complexes 1-5 with formula [Os(CO)3X(dbm)] are prepared through utilization of both solid-state pyrolysis and ligand exchange reactions. These complexes exhibit prominent 3pi-pi* phosphorescence with unusually long lifetimes (29-64 micros) and high quantum yields (0.08-0.13).     

Furan-containing oligoaryl cyclophanene

[structure: see text] Furan-containing oligoaryl cyclophanene 1 and the corresponding cyclophane 2 were synthesized from propargylic dithioacetal 3. The electrochemical and photophysical properties and the fluxional behavior of these molecules have been examined. The emission of 1 appeared at 499 nm whereas that of 2 appeared at 389 nm.     

Mixed finite volume methods on nonstaggered quadrilateral grids for elliptic problems

We construct and analyze a mixed finite volume method on quadrilateral grids for elliptic problems written as a system of two first order PDEs in the state variable (e.g., pressure) and its flux (e.g., Darcy velocity). An important point is that no staggered grids or covolumes are used to stabilize the system. Only a single primary grid system is adopted, and the degrees of freedom are imposed on the interfaces. The approximate flux is sought in the lowest-order Raviart-Thomas space and the pressure field in the rotated- nonconforming space. Furthermore, we demonstrate that the present finite volume method can be interpreted as a rotated- nonconforming finite element method for the pressure with a simple local recovery of flux. Numerical results are presented for a variety of problems which confirm the usefulness and effectiveness of the method.

     

Wavenumber Measurements of CO(2) Transitions in 1.5-µm Atmospheric Window Using an External-Cavity Diode Laser

Using an external-cavity diode laser (ECDL) as the light source, we have observed the spectrum of CO(2) in the 1.5-μm atmospheric window including the (30(0)1)(I) <-- (00(0)0) and (31(1)1)(I) <-- (01(1)0)(I) bands. Good signal-to-noise ratio allowed us to lock the frequency of our ECDL to the absorption line centers. Wavenumber measurements of the transitions with accuracy about 6.6 x 10(-4) cm(-1) are made with the help of a precision wavemeter calibrated to the accurate C(2)H(2) frequency references in the 1.5-μm wavelength region. Molecular constants are obtained by making the least-squares fits of the measured transition wavenumbers. The rotational and centrifugal distortion constants are consistent with the previous results using high-resolution Fourier transform spectroscopy. However, the band centers are different with previous results by several thousandth reciprocal centimeters. Copyright 2001 Academic Press.     

High-Resolution Measurements of HBr Transitions in the First Overtone Band Using Tunable Diode Lasers

High-resolution absorption lineshapes of the R(7) and P(2) transitions in the first overtone (v = 0-2) band of H(79)Br have been recorded at room temperature using a pair of distributed feedback diode lasers operating near 1.95 and 2.00 μm, respectively. Spectral line intensities and self-broadening coefficients were determined by fitting the measured spectra (for various pressures P = 10-100 Torr) with Voigt profiles and compared with values in the literature. Measured line intensities for the P(2) and R(7) transitions are approximately 11 and 16% higher than those listed in the HITRAN database, respectively. The measured self-broadening coefficient of the P(2) transition is approximately 14% lower than the value listed in HITRAN. Measurements of the P(2) lineshapes at low pressure (100 mTorr) were modeled with eight-line Gaussian profiles based on ground state (v = 0) hyperfine constants to include the effects of nuclear electric quadrupole interactions. Copyright 2000 Academic Press.     

Frequency stabilization of a frequency-doubled 1556-nm source to the 5S(1/2) ? 5D (5/2) two-photon transitions of rubidium

Improvements in the power level of sources near 1550 nm and in the efficiency of waveguide frequency doublers enabled us to lock a frequency-doubled source directly to the 5S(1/2) ? 5D(5/2) two-photon transitions near 778 nm. We obtained a sufficiently powerful second-harmonic signal, exceeding 2 mW, by doubling an external-cavity diode laser that was amplified by an erbium-doped fiber amplifier in a periodically poled LiNbO(3) channel waveguide. Our experimental scheme can be used for realizing compact, high-performance frequency standards near 1550 nm for fiber-optic communication and sensing applications.     

The effects of hydrogen plasma pretreatment on the formation of vertically aligned carbon nanotubes

The effects of H₂ plasma pretreatment on the growth of vertically aligned carbon nanotubes (CNTs) by varying the flow rate of the precursor gas mixture during microwave plasma chemical vapor deposition (MPCVD) have been investigated in this study. Gas mixture of H₂ and CH₄ with a ratio of 9:1 was used as the precursor for synthesizing CNTs on Ni-coated TiN/Si(1 0 0) substrates. The structure and composition of Ni catalyst nanoparticles were investigated by using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (XTEM). Results indicated that, by manipulating the morphology and density of the Ni catalyst nanoparticles via changing the flow rate of the precursor gas mixture, the vertically aligned CNTs could be effectively controlled. The Raman results also indicated that the intensity ratio of the G and D bands (I_D/I_G) is decreased with increasing gas flow rate. TEM results suggest H₂ plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles and, thus, is playing a crucial role in modifying the obtained CNTs structures.     

The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode

Pb_0.97La_0.02(Zr_0.85Sn_0.13Ti_0.02)O₃ (PLZST 2/85/13/2) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO₂/Si and LaNiO₃(LNO)/SiO₂/Si substrates through a modified sol-gel process. The phase structure and microstructure of PLZST 2/85/13/2 antiferroelectric thin films were analysed by x-ray diffraction (XRD), scanning electron microcopy (SEM) and field-emission SEM (FE-SEM). The antiferroelectric nature of the PLZST 2/85/13/2 thin films on two electrodes was demonstrated by the C-V (capacitance-voltage) and P-E (polarization-electric field) measurement. The maximum polarizations for PLZST 2/85/13/2 films on Pt and LNO electrodes were 42 and 18 μC/cm², respectively. The temperature dependence of the dielectric property of the PLZST 2/85/13/2 films was measured under different dc electric fields. Also, the phase transformation of the PLZST 2/85/13/2 films was studied in detail as a function of temperature and dc electric field.