全文获取类型
收费全文 | 12736篇 |
免费 | 1771篇 |
国内免费 | 1430篇 |
专业分类
化学 | 8895篇 |
晶体学 | 160篇 |
力学 | 794篇 |
综合类 | 93篇 |
数学 | 1525篇 |
物理学 | 4470篇 |
出版年
2024年 | 63篇 |
2023年 | 295篇 |
2022年 | 466篇 |
2021年 | 491篇 |
2020年 | 504篇 |
2019年 | 533篇 |
2018年 | 454篇 |
2017年 | 441篇 |
2016年 | 614篇 |
2015年 | 603篇 |
2014年 | 706篇 |
2013年 | 952篇 |
2012年 | 1058篇 |
2011年 | 1107篇 |
2010年 | 760篇 |
2009年 | 690篇 |
2008年 | 866篇 |
2007年 | 702篇 |
2006年 | 652篇 |
2005年 | 494篇 |
2004年 | 444篇 |
2003年 | 344篇 |
2002年 | 387篇 |
2001年 | 261篇 |
2000年 | 252篇 |
1999年 | 283篇 |
1998年 | 198篇 |
1997年 | 145篇 |
1996年 | 162篇 |
1995年 | 148篇 |
1994年 | 110篇 |
1993年 | 113篇 |
1992年 | 93篇 |
1991年 | 93篇 |
1990年 | 81篇 |
1989年 | 59篇 |
1988年 | 42篇 |
1987年 | 45篇 |
1986年 | 28篇 |
1985年 | 37篇 |
1984年 | 26篇 |
1983年 | 24篇 |
1982年 | 21篇 |
1981年 | 11篇 |
1980年 | 8篇 |
1979年 | 7篇 |
1978年 | 13篇 |
1976年 | 7篇 |
1975年 | 7篇 |
1968年 | 6篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
51.
J.-M. Liu N. Chong H.L.W. Chan K.H. Wong C.L. Choy 《Applied Physics A: Materials Science & Processing》2003,76(1):93-96
Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial
structure of the as-prepared thin films is characterized by checking the X-ray-diffraction θ-2 θ scan and pole-figure, using
scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance
at 345 MHz for a 1.5 μm thick AlN film on a (111) Si substrate is observed using an inter-digital electrode.
Received: 18 September 2001 / Accepted: 29 January 2002 / Published online: 3 June 2002
RID="*"
ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: liujm@nju.edu.cn 相似文献
52.
A method for improving the quality of all-optical switching is presented. Pumping poly(methyl methacrylate) (PMMA) films doped with azobenzene chromophore Disperse Red 1 (DR1) with two beams (a linearly and a circularly polarized), all-optical switching effects with very low background and high stability are demonstrated. High frequency switching, which is hard to be realized under pump of a single beam, is obtained. The circularly polarized pump beam can erase the photoinduced birefringence and quicken the relaxation process, thus lowering the background and improving the stability and the extinction ratio of the switching signal. PACS 42.70.Jk; 42.25.Lc; 82.30.Qt; 78.20.Fm; 77.80.Fm 相似文献
53.
An ultrasonic method for the extraction of chlorogenic acid from fresh leaves of Eucommia ulmodies Oliv. was investigated and optimized. The influence of four extraction variables on extraction efficiency of chlorogenic acid was investigated. The optimum extraction conditions found were: 70% aqueous methanol; solvent: sample ratio=20:1 (v/w); extraction time 3 x 30 min. The recovery of chlorogenic acid was studied (HPLC) and the reproducibility of the extraction method was determined. The optimized ultrasonic extraction conditions were applied to extract chlorogenic acid from fresh leaves, fresh bark and dried bark of E. ulmodies and four traditional Chinese medicines. The application of sonication method was shown to be highly efficient in the extraction of chlorogenic acid from E. ulmodies and other Chinese medicines compared with classical methods. 相似文献
54.
Differential algebraic method is a powerful technique in computer numerical analysis. It presents a straightforward method for computing arbitrary order derivatives of functions with extreme high accuracy limited only by the truncation error of the computer. When applied to nonlinear dynamical systems, the arbitrary high-order transfer properties of the systems can be computed directly with high precision. In this article, the time of flight (TOF) property of electrostatic electron lens systems is studied by differential algebraic method and their arbitrary order TOF transfer properties can be numerically calculated. As an example, Schiske's model electrostatic lens has been studied by the efficient differential algebraic TOF method. 相似文献
55.
根据D-T反应中子的能谱和角分布数据,建立了中子源模型;根据石灰岩地层标准刻度井群数据,建立了井模型。采用MCNP程序模拟了井中中子和射线的输运,得到了不同地层密度、不同源距处NaI探测器中的混合能谱和非弹能谱。在混合能谱2.5~4.5 MeV能区开窗,混合射线相对计数随源距的变化曲线显示,源距应选择在20~80 cm,密度与混合射线计数之间呈现非线性关系。在非弹能谱1.0~8.0 MeV能区开窗,非弹射线相对计数随源距的变化数据显示,源距应选择在20~40 cm或80 cm附近,密度与非弹射线计数之间成近似线性关系。 相似文献
56.
57.
ECR离子源的等离子体阻抗对其微波传输与阻抗匹配设计至关重要。在中国科学院近代物理研究所现有的2.45 GHz ECR 质子源上,对等离子体阻抗进行了测量。首先用水吸收负载代替等离子体负载测量得到了所用微波窗阻抗,然后根据质子源测量数据,推算得到了等离子体阻抗。实验结果表明,脊波导输出端阻抗与后续负载不完全匹配,等离子体阻抗随微波功率变化呈非线性。这些结果为ECR离子源过渡匹配和微波窗的设计提供了参考依据。Plasma impedance of an ECR ion source is important for microwave transmission and impedance matching design. Plasma impedance was measured indirectly with the 2.45 GHz ECR proton source at the Institute of Modern Physics, Chinese Academy of Sciences. In the test, we got microwave window mpedance by using water absorption load instead of plasma load, and the source plasma impedance was derived from the test data with the 2.45 GHz ECR proton source and microwave window impedance. The experimental results show that ridge waveguide output impedance and the subsequent load does not exactly match, plasma impedance variation is nonlinear with microwave power. The achievedresult is useful in the design of ridged waveguide and microwave window. 相似文献
58.
Efficient and compact green-yellow laser output at 543 nm is generated by intracavity frequency doubling of a CW diode-pumped Nd:LuVO4 laser at 1086 nm under the condition of suppressing the higher gain transition near 1064 nm. With 16 W of diode pump power and the frequency-doubling crystal LBO, as high as 2.17 W of CW output power at 543 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 13.6% and the output power stability over 8 hours is better than 2.86%. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by intracavity frequency doubling of a diode pumped Nd:LuVO4 laser at 1086 nm. 相似文献
59.
Alam MS Kim IJ Nemati B O'Neill JJ Romero V Severini H Sun CR Wang P Zoeller MM Crawford G Fulton R Gan KK Kagan H Kass R Lee J Malchow R Morrow F Sung M White C Whitmore J Wilson P Butler F Fu X Kalbfleisch G Lambrecht M Skubic P Snow J Bortoletto D Brown DN Dominick J McIlwain RL Miao T Miller DH Modesitt M Schaffner SF Shibata EI Shipsey IP Battle M Ernst J Kroha H Roberts S Sparks K Thorndike EH Wang C Artuso M Goldberg M Haupt T Horwitz N Kennett R Moneti GC Playfer S Rozen Y Rubin P 《Physical review D: Particles and fields》1992,46(11):4822-4827
60.
采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO2复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS
关键词:
2复合薄膜')" href="#">ZnSe/SiO2复合薄膜
光学性质
椭偏光度法
荧光光谱 相似文献