首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   4093篇
  免费   148篇
  国内免费   27篇
化学   2840篇
晶体学   40篇
力学   96篇
数学   347篇
物理学   945篇
  2024年   5篇
  2023年   21篇
  2022年   72篇
  2021年   95篇
  2020年   79篇
  2019年   69篇
  2018年   59篇
  2017年   46篇
  2016年   121篇
  2015年   115篇
  2014年   145篇
  2013年   231篇
  2012年   319篇
  2011年   351篇
  2010年   186篇
  2009年   173篇
  2008年   268篇
  2007年   247篇
  2006年   228篇
  2005年   218篇
  2004年   169篇
  2003年   153篇
  2002年   141篇
  2001年   90篇
  2000年   95篇
  1999年   77篇
  1998年   59篇
  1997年   33篇
  1996年   49篇
  1995年   45篇
  1994年   48篇
  1993年   44篇
  1992年   31篇
  1991年   21篇
  1990年   30篇
  1989年   21篇
  1988年   6篇
  1987年   9篇
  1986年   12篇
  1985年   13篇
  1984年   8篇
  1983年   6篇
  1982年   9篇
  1980年   7篇
  1979年   5篇
  1977年   4篇
  1976年   5篇
  1975年   5篇
  1974年   7篇
  1973年   4篇
排序方式: 共有4268条查询结果,搜索用时 15 毫秒
71.
The pressure dependence of the direct and indirect bandgap of epitaxial In0.52Al0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τΓ X ), of 4.1×10−3 is deduced.  相似文献   
72.
Large enhancements have been observed in the sub-barrier fusion cross sections for Ti+Ni systems in our previous studies. Coupled channel calculations incorporating couplings to 2+ and 3 states failed to explain these enhancements completely. A possibilty of transfer channels contributing to the residual enhancements had been suggested. In order to investigate the role of relevant transfer channels, measurements of one- and two-nucleon transfer were carried out for 46,48Ti+61Ni systems. The present paper gives the results of these studies.  相似文献   
73.
A triple (x, y, z) in a linear 2-normed space (X, ‖.,.‖) is called an isosceles orthogonal triple, denoted |(x, y, z), if |(.,.,.) is said to be homogeneous if |(x, y, z) implies |(ax, y, z) for all real a and it is additive if |(x1, y, z) and |(x2, y, z) imply that |(x1 + x2, y, z). In addition to developing some basic properties of |(.,.,.), this paper shows that under the assumption of strict convexity, every subspace of X of dimension ≤ 3 contains an isosceles orthogonal triple. Further, if (X, ‖.,.‖) is strictly convex and |(…,.) is either homogeneous or additive, then (X, ‖.,.‖) is a 2-inner product space.  相似文献   
74.
We report the observation of a new DsJ meson produced in B+-->D0DsJ-->D0D0K+. This state has a mass of M=2708+/-9(-10)(+11) MeV/c2, a width Gamma=108+/-23(-31)(+36) MeV/c2 and a 1- spin-parity. The statistical significance of this observation is 8.4 sigma. The results are based on an analysis of 449 x 10(6) BB events collected at the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric-energy e+e- collider.  相似文献   
75.
We propose a reactive ion etching (RIE) process of an L10-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system and an etching gas combination of CH4/O2/NH3 was employed. The L10-FePt films were deposited on (1 0 0)-oriented MgO substrates using a magnetron sputtering system. The etching masks of Ti were patterned on the FePt films lithographically. The etch rates of ∼16 and ∼0 nm/min were obtained for the FePt film and the Ti mask, respectively. The atomic force microscopy (AFM) analyses provided the average roughness (Ra) value of 0.95 nm for the etched FePt surface, that is, a very flat etched surface was obtained. Those results show that the highly selective RIE process of L10-FePt was successfully realized in the present study.  相似文献   
76.
Oxo-bridged trimeric chromium acetate clusters [Cr3O(OOCCH3)6(H2O)3]NO3 have been encapsulated for the first time in the mesoporous cages of the chromium terephthalate MIL-101(Cr). The isolated clusters in MIL-101(Cr) have increased affinity towards propylene compared to propane, due to generation of a new kind of pocket-based propylene-binding site, as supported by DFT calculations.  相似文献   
77.
Nonlinear Dynamics - This paper develops new continuous sliding mode controllers for multi-input multi-output mechanical systems in the presence of unknown, but bounded uncertainties in the given...  相似文献   
78.
Carbon-free CuInSe2 (CIS) thin film with a dense microstructure has been prepared using a novel non-vacuum based fabrication route. CuxSy and In2Se3 binary nanoparticles, approximately 10 nm in size, were synthesized by a low temperature colloidal process. The precursor film was deposited using the coating ink formulated with the binary nanoparticles and pyridine, and then annealed in the rapid thermal annealing (RTA) chamber at 540 °C for 15 min under selenium (Se) atmosphere. Scanning electron micrographs, X-ray diffraction patterns and Raman spectra showed a phase pure carbon-free and dense CIS thin film was prepared in this method. A solar cell device fabricated using this CIS thin film showed the following photovoltaic characteristics: VOC = 350 mV, JSC = 24.72 mA cm−2, FF = 38.73% and η = 3.36% under standard AM 1.5 condition.  相似文献   
79.
We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.  相似文献   
80.
We consider a degenerate or a nearly degenerate dark matter sector where a sizable magnetic moment of a (almost) Dirac type neutral dark matter candidate N is anticipated. Then, due to soft photon exchange, the cross-section in direct detection of N   can be enhanced at low Q2Q2 region. We discuss the implication of this type of models in view of the recent CDMS II report.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号