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71.
The pressure dependence of the direct and indirect bandgap of epitaxial In0.52Al0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes
from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate.
For the epilayer we obtain
and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τΓ/τ
X
), of 4.1×10−3 is deduced. 相似文献
72.
KM Varier AM Vinodkumar NVSV Prasad PV Madhusudhana Rao DL Sastry Lagy T Baby MC Radhakrishna NG Puttaswamy JJ Das P Sugathan N Madhavan AK Sinha DO Kataria 《Pramana》1999,53(3):529-533
Large enhancements have been observed in the sub-barrier fusion cross sections for Ti+Ni systems in our previous studies.
Coupled channel calculations incorporating couplings to 2+ and 3− states failed to explain these enhancements completely. A possibilty of transfer channels contributing to the residual enhancements
had been suggested. In order to investigate the role of relevant transfer channels, measurements of one- and two-nucleon transfer
were carried out for 46,48Ti+61Ni systems. The present paper gives the results of these studies. 相似文献
73.
Y. J. Cho C. R. Diminnie R. W. Freese E. Z. Andalafte 《Mathematische Nachrichten》1992,157(1):225-234
A triple (x, y, z) in a linear 2-normed space (X, ‖.,.‖) is called an isosceles orthogonal triple, denoted |(x, y, z), if |(.,.,.) is said to be homogeneous if |(x, y, z) implies |(ax, y, z) for all real a and it is additive if |(x1, y, z) and |(x2, y, z) imply that |(x1 + x2, y, z). In addition to developing some basic properties of |(.,.,.), this paper shows that under the assumption of strict convexity, every subspace of X of dimension ≤ 3 contains an isosceles orthogonal triple. Further, if (X, ‖.,.‖) is strictly convex and |(…,.) is either homogeneous or additive, then (X, ‖.,.‖) is a 2-inner product space. 相似文献
74.
Brodzicka J Palka H Adachi I Aihara H Aulchenko V Bakich AM Barberio E Bay A Bedny I Bitenc U Bondar A Bracko M Browder TE Chang MC Chang P Chen A Chen WT Cheon BG Chiang CC Chistov R Cho IS Choi SK Choi Y Dalseno J Danilov M Dash M Drutskoy A Eidelman S Gabyshev N Go A Gokhroo G Golob B Ha H Haba J Hara T Hayasaka K Hayashii H Hazumi M Heffernan D Hoshi Y Hou WS Hyun HJ Iijima T Ikado K Inami K Ishikawa A Ishino H Itoh R Iwasaki M Iwasaki Y Joshi NJ Kah DH Kang JH Kawai H Kawasaki T Kichimi H 《Physical review letters》2008,100(9):092001
We report the observation of a new DsJ meson produced in B+-->D0DsJ-->D0D0K+. This state has a mass of M=2708+/-9(-10)(+11) MeV/c2, a width Gamma=108+/-23(-31)(+36) MeV/c2 and a 1- spin-parity. The statistical significance of this observation is 8.4 sigma. The results are based on an analysis of 449 x 10(6) BB events collected at the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric-energy e+e- collider. 相似文献
75.
Tomomi Kanazawa Kohei Ono Masashi Yamazaki Shiho Cho Fumiyoshi Takano 《Applied Surface Science》2008,254(23):7918-7920
We propose a reactive ion etching (RIE) process of an L10-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system and an etching gas combination of CH4/O2/NH3 was employed. The L10-FePt films were deposited on (1 0 0)-oriented MgO substrates using a magnetron sputtering system. The etching masks of Ti were patterned on the FePt films lithographically. The etch rates of ∼16 and ∼0 nm/min were obtained for the FePt film and the Ti mask, respectively. The atomic force microscopy (AFM) analyses provided the average roughness (Ra) value of 0.95 nm for the etched FePt surface, that is, a very flat etched surface was obtained. Those results show that the highly selective RIE process of L10-FePt was successfully realized in the present study. 相似文献
76.
Dr. Sanil E. Sivan Minhui Lee Su-Kyung Lee Dr. Ji Woong Yoon Dr. Kiwoong Kim Dr. Do-Young Hong Kyung-Ho Cho Dr. U-Hwang Lee Prof. Jong-San Chang Dr. Jaehoon Jung Prof. Young Kyu Hwang 《Chemistry (Weinheim an der Bergstrasse, Germany)》2019,25(56):12889-12894
Oxo-bridged trimeric chromium acetate clusters [Cr3O(OOCCH3)6(H2O)3]NO3 have been encapsulated for the first time in the mesoporous cages of the chromium terephthalate MIL-101(Cr). The isolated clusters in MIL-101(Cr) have increased affinity towards propylene compared to propane, due to generation of a new kind of pocket-based propylene-binding site, as supported by DFT calculations. 相似文献
77.
Nonlinear Dynamics - This paper develops new continuous sliding mode controllers for multi-input multi-output mechanical systems in the presence of unknown, but bounded uncertainties in the given... 相似文献
78.
Young-Joo Eo Wonha Lee Kyunhwan Kim SeJin Ahn Ara Cho Jihye Gwak Kyunghoon Yoon Se Youn Moon Hyo Rim Jung Jin Hyeok Kim Jae Ho Yun 《Current Applied Physics》2014,14(10):1349-1355
Carbon-free CuInSe2 (CIS) thin film with a dense microstructure has been prepared using a novel non-vacuum based fabrication route. CuxSy and In2Se3 binary nanoparticles, approximately 10 nm in size, were synthesized by a low temperature colloidal process. The precursor film was deposited using the coating ink formulated with the binary nanoparticles and pyridine, and then annealed in the rapid thermal annealing (RTA) chamber at 540 °C for 15 min under selenium (Se) atmosphere. Scanning electron micrographs, X-ray diffraction patterns and Raman spectra showed a phase pure carbon-free and dense CIS thin film was prepared in this method. A solar cell device fabricated using this CIS thin film showed the following photovoltaic characteristics: VOC = 350 mV, JSC = 24.72 mA cm−2, FF = 38.73% and η = 3.36% under standard AM 1.5 condition. 相似文献
79.
S.I. Jung J.J. Yoon H.J. Park Y.M. Park M.H. Jeon J.Y. Leem C.M. Lee E.T. Cho J.I. Lee J.S. Kim J.S. Son J.S. Kim D.Y. Lee I.K. Han 《Physica E: Low-dimensional Systems and Nanostructures》2005,26(1-4):100
We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer. 相似文献
80.
We consider a degenerate or a nearly degenerate dark matter sector where a sizable magnetic moment of a (almost) Dirac type neutral dark matter candidate N is anticipated. Then, due to soft photon exchange, the cross-section in direct detection of N can be enhanced at low Q2 region. We discuss the implication of this type of models in view of the recent CDMS II report. 相似文献