Evaluation of surface characteristics under fretting of electrical contacts: Removal behaviour of hot dipped tin coating

The fretting corrosion behaviour of hot dipped tin coating is investigated at low fretting cycles at ±25 μm displacement amplitude, 0.5N normal load, 3 Hz frequency, 45-50% relative humidity, and 25 ± 1 °C temperature. The typical characteristics of the change in contact resistance with fretting cycles are explained. The fretted surface is examined using laser scanning microscope, scanning electron microscope and energy dispersive X-ray analysis to assess the surface profile, extent of fretting damage, extent of oxidation and elemental distribution across the contact zone. The interdependence of extent of wear and oxidation increases the complexity of the fretting corrosion behaviour of tin coating. The variation of contact resistance clearly revealed the fretting of tin coating from 50 to 1200 cycles and the fretting of the substrate above 1200 cycles. The observed low and stable contact resistance region and the fluctuating resistance region at various fretting cycles are explained and substantiated with Scanning electron microscopy (SEM), laser scanning microscope (LSM) and energy dispersive analysis of X-rays (EDAX) analysis results of the fretted surface.     

Femtosecond laser embedded grating micromachining of flexible PDMS plates

We report on the femtosecond laser micromachining of photo-induced embedded diffraction grating in flexible Poly (Dimethly Siloxane) (PDMS) plates using a high-intensity femtosecond (130 fs) Ti: sapphire laser (λ_p = 800 nm). The refractive index modifications with diameters ranging from 2 μm to 5 μm were photo-induced after the irradiation with peak intensities of more than 1 × 10¹¹ W/cm². The graded refractive index profile was fabricated to be a symmetric around from the center of the point at which femtosecond laser was focused. The maximum refractive index change (Δn) was estimated to be 2 × 10⁻³. By the X-Y-Z scanning of sample, the embedded diffraction grating in PDMS plate was fabricated successfully using a femtosecond laser.     

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×10¹⁰ cm⁻² was observed by atomic force microscopy before the capping process. The influences of GaAs, In_0.53Ga_0.47As, and InP capping layers (5–10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.     

Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film

N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10⁻⁴ cm²/V s and 1.1 × 10⁻⁴ cm²/V s under the electric field of 500 (V/cm)^1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.     

Quantised phase filters with binary low and high pass amplitude response: the effect of quantisation for scale and rotation input distortions

In the field of optical pattern recognition, there are a large number of filters that possess identification capabilities for certain kinds of input distortions. The resolution of the spectral components plays an important role in the overall processing time of a correlator that may employ such filters. In this paper, two different techniques are discussed: low pass phase filtering and high pass phase filtering. This is achieved by binarizing the amplitude information which then allows certain frequencies to pass and others to be blocked. Their response to different kinds of input distortions is presented and the effect of phase quantisation is considered in detail.     

Correlation between Al2O3 particles and interface of Al-Al2O3 coatings by cold spray

Al-Al₂O₃ composite coatings with different Al₂O₃ particle shapes were prepared on Si and Al substrate by cold spray. The powder compositions of metal (Al) and ceramic (Al₂O₃) having different sizes and agglomerations were varied into ratios of 10:1 wt% and 1:1 wt%. Al₂O₃ particles were successfully incorporated into the soft metal matrix of Al. It was found that crater formation between the coatings and substrate, which is typical characteristic signature of cold spray could be affected by initial starting Al₂O₃ particles. In addition, when the large hard particles of fused Al₂O₃ were employed, the deep and big craters were generated at the interface between coatings and hard substrates. In the case of pure soft metal coating such as Al on hard substrate, it is very hard to get proper adhesion due to lack of crater formation. Therefore, the composite coating would have certain advantages.     

Modeling of radiative heat transfer in an axisymmetric cylindrical enclosure with participating medium

Radiative heat transfer in an axisymmetric enclosure with absorbing, emitting, and scattering medium is studied here by using the different methods such as MDOM, FVM, and MFVM with emphasis on the treatment of angular derivative term, which appears in curvilinear coordinates due to angular redistribution. After final discretization equation for MFVM is introduced by using the step scheme and directional weights, the present approach is validated by applying it to three different benchmarking problems with absorbing, emitting, and scattering medium. All of the results presented here support its accuracy as well as moderate efficiency. Finally, the present approaches are applied to a truncated cone-shaped enclosure as a body-fitted geometry case.     

Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material

Triple-layer omnidirectional reflectors (ODRs) consisting of a semiconductor, a quarter-wavelength transparent dielectric layer, and a metal have high reflectivities for all angles of incidence. Internal ODRs (ambient material's refractive index n > 1.0) are demonstrated that incorporate nanoporous SiO2, a low-refractive-index material (n = 1.23), as well as dense SiO2 (n = 1.46). GaP and Ag serve as the semiconductor and the metal layer, respectively. Reflectivity measurements, including angular dependence, are presented. Calculated angle-integrated TE and TM reflectivities for ODRs employing nanoporous SiO2 are R(int)/TE = 99.9% and R(int)/TM = 98.9%, respectively, indicating the high potential of the ODRs for low-loss waveguide structures.     

Observation of the effects of radially sheared electric fields on the suppression of turbulent vortex structures and the associated transverse loss in GAMMA 10

Vortexlike turbulent structures in hot-ion mode plasmas with several keV are observed in the case with a radially produced weak shear of electric fields E(r). However, a strong E(r) shear formation due to a high ion-confining potential phi(c) production clears up these vortices together with plasma-confinement improvement and disappearance of both drift-wave and turbulencelike Fourier spectral signals. These findings are based on three-time progress in phi(c) in comparison to phi(c) attained 1992-2002. The significant advance of phi(c) is well extended in line with proposed potential-formation physics scalings.     

First observation of the P-wave spin-singlet bottomonium states hb(1P) and hb(2P)

We report the first observations of the spin-singlet bottomonium states h(b)(1P) and h(b)(2P). The states are produced in the reaction e(+)e(-)→h(b)(nP)π(+)π(-) using a 121.4 fb(-1) data sample collected at energies near the Υ(5S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. We determine M[h(b)(1P)]=(9898.2(-1.0-1.1)(+1.1+1.0)) MeV/c(2) and M[h(b)(2P)]=(10,259.8±0.6(-1.0)(+1.4)) MeV/c(2), which correspond to P-wave hyperfine splittings ΔM(HF)=(+1.7±1.5) and (+0.5(-1.2)(+1.6)) MeV/c(2), respectively. The significances of the h(b)(1P) and h(b)(2P) are 5.5σ and 11.2σ, respectively. We find that the production of the h(b)(1P) and h(b)(2P) is not suppressed relative to the production of the Υ(1S), Υ(2S), and Υ(3S).