磁镜装置中ECR等离子体硬X射线强度观测

本文描述用硬X射线针孔成象法测量简单磁镜装置中ECR等离子体辐射特性的方法及其结果。这种非破坏性的成象法,直接显示了热电子等离子体的空间分布,一次放电可成一帧清晰的象,且由此可得出二维的等发射强度线。大量结果表明电子环是非轴对称的,并非为一个整环,而是在微波注入口的对面有一个缺口。当微波功率改变时,环也在改变。     

腔靶等离子体辐射温度空间分布测量

本文描述了用膜吸收法测量激光等离子体辐射温度空间分布的原理和方法给出了柱形缝靶轴向辐射温度随空间位置变化的特征,对测量结果进行了分析讨论。     

用光谱学方法研究不同放电等离子体粒子约束

本文用光谱学方法研究在ＨＬ－１装置上ＬＨＣＤ及ＥＣＲＨ等离子体，弹丸注入等离子体，偏压电极与偏压孔栏等离子体粒子约束特性。结果表明：在弹丸注入使用正向偏压电极与偏压孔栏期间，等离子体粒子约束行到改善，较低密度下（＾ｎｅ＜２．０×１０＾１＾３ｃｍ＾－＾３），ＬＨＣＤ脉冲期间粒子约束得到改善；而当密度＾－ｎｅ大于２．０×１０＾１＾３ｃｍ＾－＾３时，等离子体约束变坏。ＥＣＲＨ脉冲期间粒子约束得不到改善。     

甲醇在γ-Al2O3,CeO2及其负载Pd催化剂上吸附和分解的原位红外光谱研究

利用原位傅里叶变换红外光谱 (FTIR)技术对甲醇在γ Al2 O3,CeO2 以及Pd/Al2 O3,Pd/CeO2 催化剂上的吸附和分解行为进行了研究。综合考虑了载体和活性组分的作用 ,分析了甲醇在不同载体负载Pd催化剂上可能的分解途径。在Pd/CeO2 催化剂上 ,活性组分和载体对甲醇分解的过程表现出了一种协同效应。     

Reflex optical sensor based on dual metal gratings with high angular sensitivity

An interesting reflection phenomenon in a dual metal grating (DMG) structure is studied, which is related to the competition between Fabry-Prot (F-P) resonance effect and evanescent-field coupling effect inside the gap between the two composing single metal gratings. This competition leads to high angular sensitivity in response to the refractive index variation of the sample solution in the gap. A reflex optical sensor with high sensitivity based on DMG for detecting the change in refractive index is proposed and its performance theoretically is discussed.     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.     

Diffusion study of multi-organic layers in OLEDs by ToF-SIMS

A model organic light-emitting diodes (OLEDs) with structure of tris(8-hydroxyquinoline) aluminum (Alq₃)/N,N′-diphenyl-N,N′-bis[1-naphthy-(1,1′-diphenyl)]-4,4′-diamine (NPB)/indium tin oxide (ITO)-coated glass was fabricated for diffusion study by ToF-SIMS. The results demonstrate that ToF-SIMS is capable of delineating the structure of multi-organic layers in OLEDs and providing specific molecular information to aid deciphering the diffusion phenomena. Upon heat treatment, the solidity or hardness of the device was reduced. Complicated chemical reaction might occur at the NPB/ITO interface and results in the formation of a buffer layer, which terminates the upper diffusion of ions from underlying ITO.     

ZnO-Bi2O3系压敏陶瓷的导电过程与等效势垒高度

研究了ZnO-Bi2O3系压敏陶瓷等效势垒高度φeff随着归一化电压的变化规律,发现等效势垒高度φeff随着归一化电压的增加先逐渐增大,达到最大值后持续下降.由于在外加电压作用下反偏势垒高度高于正偏势垒高度,等效势垒高度φeff主要取决于反偏势垒.因此,这种变化规律说明了ZnO压敏陶瓷晶界的导电过程可能存在三个阶段.在低归一化电压区,晶界区域中的电子从正偏势垒区注入到晶界无序层的速率低于电子从晶界无序层抽出到反偏势垒区的速率,从而导致等效势垒高度随着归一化电压的增加逐渐增大.在中等归一化电压区,电子从正偏势垒区注入到晶界无序层的速率和电子从晶界无序层抽出到反偏势垒区的速率相平衡,等效势垒高度达到最大值.在高归一化电压区,电子从正偏势垒区注入到晶界无序层的速率高于电子从晶界无序层抽出到反偏势垒区的速率,等效势垒高度随着归一化电压的增加逐渐下降,直至晶界击穿.同时分析了等效势垒高度φeff对泄漏电流IL的影响,发现泄漏电流与等效势垒高度差Δφ呈指数关系.     

辐照电子在光纤芯处能量沉积的计算

为了用尽可能低的辐照电子能量在光纤芯处形成大的性质改变,模拟了0.1～1 MeV能量的电子辐照二氧化硅.发现每一特定能量的电子辐照二氧化硅时,在其中有个能量沉积最快的位置.计算得到0.447 4 MeV能量的电子在单模光纤中心能量沉积最快,分析发现对于这个能量的电子多数可以穿透到光纤芯处,电子能量在光纤芯处的沉积主要是由于电子能量的减小造成的.这些结果可为用电子辐照光纤制作光器件时的初始电子能量选择提供参考.