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41.
It is shown that new sources of CP violation can be generated in models with more than one extra dimension. In the supersymmetric models on the space-time , where the radius moduli have auxiliary vacuum expectation values and the supersymmetry breaking is mediated by the Kaluza–Klein states of the gauge supermultiplets, we analyze the gaugino masses and trilinear couplings for two scenarios and obtain the result that there exist relative CP violating phases among the gaugino masses and trilinear couplings. Received: 10 October 2001 / Published online: 20 December 2001  相似文献   
42.
The nanocrystal samples of titanium dioxide doped with europium ion (Eu3+/TiO2 nanocrystal) are synthesized by the sol-gel method with hydrothermal treatment. The Eu3+ contents (molar ratio) in the samples are 0, 0.5%, 1%, 2%, 3% and 4%. The X-ray diffraction, UV-Vis spectroscopy data and scanning electron microscope image show that crystallite size is reduced by the doping of Eu3+ into TiO2. Comparing the Raman spectra of TiO2 with Eu3+/TiO2 (molar ratio Eu3+/TiO2=1%, 2% and 4%) nanocrystals at different annealing temperatures indicates that the anatase-to-rutile phase transformation temperatures of Eu3+/TiO2 nanocrystals are higher than that of TiO2. This is due to the formation of Eu-O-Ti bonds on the surface of the TiO2 crystallite, as characterized by the X-ray photoelectron spectroscopy. The photoluminescence spectra of TiO2 in Eu3+/TiO2 nanocrystals are interpreted by the surface self-trapped and defect-trapped exciton relaxation. The photoluminescence of Eu3+ in Eu3+/TiO2 nanocrystals has the strongest emission intensity at 2% of Eu3+ concentration.  相似文献   
43.
The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.  相似文献   
44.
45.
We have investigated the magnetic, electrical transport and electron spin resonance (ESR) properties of polycrystalline Nd0.85Na0.15MnO3 prepared by sol–gel method. A ferromagnetic–paramagnetic (FM–PM) transition is observed around 110 K, which is not accompanied by a metal–insulator transition. The sample displays the complete PM state associated with the ESR spectra fitted by single Lorentzian line shape above 130 K. Below 130 K, ESR spectra become distorted and then linewidth increases rapidly, where short-range magnetic order develops and coexists with PM phase due to the inhomogeneous magnetic state. In addition, the large difference between the activation energies obtained from the resistivity and ESR parameters (peak-to-peak linewidth and line intensity) at the frame of adiabatic small polaron hopping model is pointed out for Nd0.85Na0.15MnO3.  相似文献   
46.
Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h  相似文献   
47.
The inclusive reduced velocity correlation functions of the intermediate mass fragments were measured in the reactions of 36Ar + 112,124Sn at 35 MeV/u. The anti-correlation is observed to be stronger in 36Ar + 124Sn system than that in 36Ar + 112Sn. The difference of the correlation functions between the two reactions is mainly contributed by the particle pairs with high momenta. A three body Coulomb repulsive trajectory model is employed to calculate the emission time scale of the IMFs for the two systems. The time scale is 150 fm/c in 36Ar + 112Sn and 120 fm/c in the 36Ar + 124Sn, respectively.  相似文献   
48.
We demonstrate a three orders of magnitude increase and stability in the backscattered fluorescence signal from nitrogen molecules by terawatt femtosecond laser pulse induced air filaments using a new method. The method is based on squeezing the initial beam diameter using a telescope. The effect of laser shot-to-shot fluctuations was included in numerical simulations by a random distribution of the initial intensity in both squeezed and non-squeezed beams. Statistical processing of the simulation results shows that the average diameter of plasma channels as well as the total amount of free electrons generated in a bunch of multiple filaments in air is larger in the squeezed beam. Shot-to-shot stability of the simulated plasma density increases in the squeezed beam. The change of this plasma density with propagation distance is in good qualitative agreement with the change of the range-corrected nitrogen fluorescence signal with distance. PACS 42.65.Jx; 42.60.Jf; 42.68.Ay; 42.68.Wt  相似文献   
49.
Ying Tsung Lu  Sien Chi 《Optik》2003,114(4):161-167
This study presents a compact optical configuration that can generate a multiplex dot-matrix hologram with complex interlaced images for anti-counterfeiting applications on valuable paper. Varying the orientation of the interference plane can enable the multiplex hologram to be recorded without changing the interference angle of two laser beams. With its simple asymmetric optical setup, a multiplex hologram with many interlaced images can be efficiently fabricated, increasing the cost of imitation. Experimental details of the asymmetric optical setup are also described.  相似文献   
50.
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