Wavelength switching based on quantum-dot vertical-cavity surface-emitting laser

This study investigates, for the first time, static and dynamic wavelength switching characteristics of the 1.3 ??m quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The free-running QD VCSEL with ??1 and ??2 state innately is injected by a laser source with ??1 state. When the injection power exceeds the threshold power, the dominant state of the QD VCSEL changes from ??2 to ??1 state. Results of this study demonstrate that the wavelength switching based on a 1.3 ??m QD VCSEL has a simpler and more cost-effective configuration than those of previous systems.     

Novel optical packet switching scheme using OFDM label with one core router and two edge routers

In this paper, we propose and experimentally demonstrate a novel optical packet switching scheme with one core router and two edge routers, in which an orthogonal frequency division multiplexing (OFDM) signal is generated as a label. In this experiment there are two transmission spans, each span consists of 50-km SMF-28 and an erbium-doped optical fiber amplifier (EDFA) without dispersion management. A 10 Gb/s on-off keying (OOK) optical payload and a 2.5 Gb/s OFDM optical label are generated, encapsulated, and transmitted in the first span. And then old label is replaced by new label, the generated new optical packet after transmission over the second span is detached and detected. The transmission performance of the optical label and payload is experimentally investigated at the ingress router, core router and egress router.     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

全金属负离子团簇Ga42-、 In42-芳香性的磁特征与多重芳香性

运用密度泛函理论的两种方法(B3LYP、B3PW91)与二级微扰方法(MP2),对二价负离子全金属团簇Ga42-、In42-的稳定结构、振动频率与电子总能量作了计算.在此基础上,运用B3LYP与HF两种方法,着重对最稳定的正方形结构的Ga42-、In42-团簇的两种磁性质:各向异性磁化率与核独立化学位移进行了研究.计算结果表明,正方形结构Ga42-、In42-团簇具有很强的芳香性.接着对它们进行细致的分子轨道结构分析,揭示了正方形结构Ga42-、In42-团簇具有多重芳香性,一个非局域π分子轨道与两个非局域σ分子轨道对此两种金属团簇的芳香性都起了重要作用.     

生物组织中的光分布研究

本文利用蒙特卡罗方法模拟了单层生物组织中光的传输与分布情况,给出了生物组织中的光子数分布随着g因子、层厚d、吸收系数以及散射系数的变化而变化的关系,分析了其变化的原因     

产生旁瓣的激光波前功率谱密度与焦斑性能分析

讨论了在放置与不放置焦斑形态控制器件 KPP的两种情况下 ,采用功率谱密度模拟分析有旁瓣焦斑的激光束波前分布的特点 ,并由此探讨高功率激光驱动器在无旁瓣的聚焦情形下 ,对入射到打靶透镜的激光束波前畸变量的控制要求。     

Single-longitudinal-mode operation of a grating-based fiber-ring laser using self-injection feedback

A fiber Bragg grating- (FBG-) based fiber-ring laser that utilizes the transmitted light of the FBG as self-injection feedback for single-longitudinal-mode (SLM) oscillation is proposed and demonstrated. This laser is simply constructed by means of feeding back the transmitted light of the FBG and is coupled into the main ring cavity through an optical coupler. The self-injection feedback is the key to ensuring SLM laser oscillation. The SLM operation principle is discussed in detail, and a SLM laser with output power of 6.6 dBm, an optical signal-to-noise ratio of 57 dB at 1549.19 nm, and a short-term linewidth of 3.5 kHz is reported.     

相移测量技术中相移器研究

本文介绍一种用于相移测量技术的相移器。该相移器由计算机通过Ｄ／Ａ接口板自动控制输出电压幅度，其电路采用闭环控制，位移由压电晶体产生，具有很高的电压稳定度（０１％）和较小的相移误差（小于３°）。描述相移器的结构、驱动源工作原理及相移器标定方法     

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al₂O₃ gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.