The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002     

氧含量对Fe掺杂YBCO体系中载流子局域化与离子团簇效应的影响

对YBa₂Cu_3-xFe_xO_y（x=00，01，02 ）和YBa₂Cu_2.8Fe_0.2O_y（y=705—653 ）系列样品的氧含量、霍尔系数和超导电性进 行了系统的研究.结果表明，氧含量的变化对样品中载流子的输运和转移及超导电性有重要 影响；适当增加氧含量可以减缓Cu(1)位元素替代对超导转变温度T_c的抑制；在 CuO₂面上参与输运的载流子（空穴）浓度是影响样品超导电性的关键因素.从电 荷转移模型出发 ，结合掺杂离子引起的载流子局域化和离子团簇效应，对载流子浓度随掺杂量和氧含量的变 化从微观结构方面进行了讨论.元素替代量的增加或者氧含量的降低（相同替代量的情况下 ）都将导致Cu-O链区的有效氧空位增多，导致替代元素的离子团簇效应和载流子局域化效应 趋于增强，这是引起参与输运的载流子浓度下降，进而导致T_c降低的主要原因. 关键词： 氧含量 霍尔系数 载流子局域化 离子团簇效应     

GaAs与InP半导体光导开关特性实验研究

利用Ⅲ-Ⅴ族化合物半导体材料砷化镓(GaAs)和磷化铟(InP)及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性.比较了这两种材料制作的不同电极间隙类型的光导开关的开关时间响应速度、导通光能与饱和触发激光能量、线性与非线性工作模式及触发稳定性等特性.结果表明,利用InP和GaAs两种材料制作的光导开关都具有达到皮秒级的超快时间响应,其对时间最佳响应与偏置电场有关.两种开关的多次触发时间抖动在几个皮秒范围,输出电压峰峰值抖动优于10%.GaAs开关的非线性工作电场阈值比InP开关低,更容易实现非线性输出.     

Wavelength switching based on quantum-dot vertical-cavity surface-emitting laser

This study investigates, for the first time, static and dynamic wavelength switching characteristics of the 1.3 ??m quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The free-running QD VCSEL with ??1 and ??2 state innately is injected by a laser source with ??1 state. When the injection power exceeds the threshold power, the dominant state of the QD VCSEL changes from ??2 to ??1 state. Results of this study demonstrate that the wavelength switching based on a 1.3 ??m QD VCSEL has a simpler and more cost-effective configuration than those of previous systems.     

Novel optical packet switching scheme using OFDM label with one core router and two edge routers

In this paper, we propose and experimentally demonstrate a novel optical packet switching scheme with one core router and two edge routers, in which an orthogonal frequency division multiplexing (OFDM) signal is generated as a label. In this experiment there are two transmission spans, each span consists of 50-km SMF-28 and an erbium-doped optical fiber amplifier (EDFA) without dispersion management. A 10 Gb/s on-off keying (OOK) optical payload and a 2.5 Gb/s OFDM optical label are generated, encapsulated, and transmitted in the first span. And then old label is replaced by new label, the generated new optical packet after transmission over the second span is detached and detected. The transmission performance of the optical label and payload is experimentally investigated at the ingress router, core router and egress router.     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

全金属负离子团簇Ga42-、 In42-芳香性的磁特征与多重芳香性

运用密度泛函理论的两种方法(B3LYP、B3PW91)与二级微扰方法(MP2),对二价负离子全金属团簇Ga42-、In42-的稳定结构、振动频率与电子总能量作了计算.在此基础上,运用B3LYP与HF两种方法,着重对最稳定的正方形结构的Ga42-、In42-团簇的两种磁性质:各向异性磁化率与核独立化学位移进行了研究.计算结果表明,正方形结构Ga42-、In42-团簇具有很强的芳香性.接着对它们进行细致的分子轨道结构分析,揭示了正方形结构Ga42-、In42-团簇具有多重芳香性,一个非局域π分子轨道与两个非局域σ分子轨道对此两种金属团簇的芳香性都起了重要作用.