Feasibility of probing boundary morphology of structured materials by 2D NMR q-space imaging

It is well known that one-dimensional (1D) q-space imaging allows retrieval of structural information at cellular resolution. Here we demonstrate by simulation that boundary morphology of structured materials can be derived from 2D q-space mapping. Based on a finite-difference model for restricted diffusion, 2D q-space maps obtained from water diffusion inside apertures at various levels of asperity were simulated. The results indicate that the observed ring patterns (diffraction minima) reveal the boundary profiles of the apertures but become blurred in the case of significant variation in aperture size. For uniform size distribution of apertures, a quantitative measure of surface roughness can be established by means of spatial autocorrelation analysis. The results suggest that 2D q-space imaging may allow probing of the boundary morphology of structured materials and possibly biological cells.     

On an estimate for Bloch and Doob norm and covering problem in Doob's class

For any fixed 0 < π ? 2π, let D(π) be the family of all holomorphic functions in the unit disk Δ which satisfy (i)f(0) = 0 and (ii) $\text{lim inf}{}_{\mathrm{z\; \to \; \pi ¦f(z)¦\; ?\; 1}}$, for all π lying on some arc A_f ? ?Δ with arclength $\text{¦A}{}_{\mathrm{f}}\text{¦ ? π}$. We show that for each 0 < ε < 1, there is a π₀ > 0 such that for any f?D(π) with π < π₀, the Bloch and Doob norm respectively satisfy

$\text{6f6}{}_{\mathrm{B}}\text{=}\text{sup}\text{z?Δ}\text{|f′(z)| (1?|z|}{}^2\text{) > 2(1 ? ε)}\text{log}\text{1+}\text{cos}\text{(}\text{p}\text{2}\text{1?}\text{cos}\text{(}\text{p}\text{2}{}^{\mathrm{?1}}$

$\text{6f6}{}_{\mathrm{D}}\text{=}\text{sup}\text{z?Δ}\text{|f′(z)| (1?|z|) > (1 ? ε)}\text{log}\text{1}\text{1?}\text{cos}\text{(}\text{p}\text{2}{}^{\mathrm{?1}}$

These two estimates do not hold with ε = 0.     

Microstructures and soft magnetic properties of Fe80P20-xSix (x = 4.5–6.5) amorphous ribbons

Fe-based amorphous ribbons with excellent soft magnetic properties and mechanical properties were prepared in the Fe–Si–P ternary system. Enhanced soft magnetic properties could be achieved through annealing treatment of the ribbons for 1 h at 325 °C, which is far below the glass transition temperatures (462–474 °C). Icosahedral medium-range ordering with a size range of around 2 nm occurred throughout the amorphous matrix during the low-temperature annealing treatment. The annealed ribbons exhibited improved magnetic saturation of over 185 emu/g while maintaining good mechanical flexibility. During icosahedral ordering, the distance between the Fe atoms and the coordination number within the amorphous ribbon can be optimised for achieving high magnetic saturation. However, nanocrystallisation of the SiP and Fe₂P transition phases embedded within the amorphous matrix occurred after the annealing treatment for 1 h at 385 °C, which caused deterioration of the soft magnetic properties and mechanical flexibility of the ribbons. Therefore, the combination of high magnetic saturation and mechanical flexibility of the amorphous ribbons could be optimised through low-temperature annealing treatment without any nanocrystallisation.     

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.     

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO₂ film were examined using local probe-based measurements. Scanning probe-based current–voltage (I–V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.