全光纤光子集成器件及系统

本对全光纤光子集成器件与系统进行了较为全面地综述,结合我们的工作,对目前的研究热点：光纤光栅,光纤激光器,光纤放大器,光纤光栅分插器与传感器等诸多光子器件以及由这些器件组成的波分复用通信系统进行了介绍和评述,一些新成果和新进展表明,这些光子器件与系统在当今和未来的光通信中将发挥重要作用。     

主晶相为莫来石复合纳米晶的制备、结构表征及性能测试

以高岭土为原料,采用水热晶化法,制得了主晶相为莫来石的复合纳米晶。利用XRD、TEM、BET及TG－TDA以在不同条件下制得的纳米晶物相、粒度及热稳定性进行了表征。对复合纳米晶进行了CO、SO2程序升温脱附性能测试。对负载Ni、Mo、Co进行程序升温还原测试。结果表明：在脱附物中检测出CO2与固体硫,证明吸附质在纳米晶表面发生了反应。微米晶与纳米晶负载Ni、Co、Mn后,随着粒度的不同,负载上的氧化物与载体的相互作用力不同,而表现出不同的峰温与峰面积,表面负载上Ni、Co、Mn的氧化物与载体有结构效应,且随晶体表面结构的不同,而表现出不同的H2消耗量。     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.     

Robust stability analysis for Markovian jumping stochastic neural networks with mode-dependent time-varying interval delay and multiplicative noise

This paper is concerned with the problem of robust stability for a class of Markovian jumping stochastic neural networks (MJSNNs) subject to mode-dependent time-varying interval delay and state-multiplicative noise. Based on the Lyapunov--Krasovskii functional and a stochastic analysis approach, some new delay-dependent sufficient conditions are obtained in the linear matrix inequality (LMI) format such that delayed MJSNNs are globally asymptotically stable in the mean-square sense for all admissible uncertainties. An important feature of the results is that the stability criteria are dependent on not only the lower bound and upper bound of delay for all modes but also the covariance matrix consisting of the correlation coefficient. Numerical examples are given to illustrate the effectiveness.     

Strain relaxation of CdTe films growing on lattice-mismatched substrates

We have deposited CdTe films by laser-assisted epitaxy approach and investigated the influence of substrate and film thickness on the film properties. Grown on Si(001), GaAs(001), and quartz substrates; the CdTe films exhibit preferential orientation along the cubic CdTe(111) direction. When the films are thin (<500 nm), a blueshift of the band gap and splitting of valence bands were observed. These results are attributed to the existence of residual strains induced by mismatch of the film lattice constant with that of the substrate, and by their difference in thermal expansion coefficients. The bulk band-gap energy of 1.5 eV was achieved on the surface of thick CdTe films grown on Si(001) substrate, indicating that strain was almost completely relaxed in this case. Our results demonstrate that by a proper selection of substrate and film thickness it is possible to grow film semiconductors with band gap approaching those of bulk crystals.     

Multi-Party Quantum Key Distribution Protocol with New Bell States Encoding Mode

International Journal of Theoretical Physics - Security, efficiency and universality are the major concerns in distributed computation for how to communicate securely as there are a large number of...     

Zeeman双频激光器频率分裂与纵模间隔变动一致性分析

激光谐振腔内相位各向异性会引起频率分裂,两分裂模的频差大小由表现出的相位延迟所决定.对于腔内相位延迟较小的He-Ne激光器,两分裂模很接近,处于烧孔重叠区,存在模式竞争而不能同时振荡,形成隐频率分裂.同时,使得激光器两正交偏振方向上的相邻级纵模产生固定的变动量,其大小等于隐频率分裂量的2倍.如果沿激光偏振方向施加横向磁...     

R-branch high-lying transition emission spectra of SbNa molecule

The calculation results of the R-branch transition emission spectra of(0–0) band of the A21 → X21 transition system of Sb Na molecule are presented in this paper. These R-branch high-lying transitional emission spectral lines are predicted by using the difference converging method(DCM). Our results show excellent agreement between DCM spectral lines and the experimental values, and the deviations are controlled within 0.0224 cm-1. What is more, based on the principle of over-determined linear equations, the prediction error is quantified in this work, which provides reliable theoretical support for our predicted DCM calculations. This work provides a lot of useful information for understanding the microstructure of Sb Na molecule.     

Negative photoconductivity in low-dimensional materials

In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelectronics.Among them,photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space.In contrast to positive photoconductivity,negative photoconductivity(NPC)refers to a phenomenon that the conductivity decreases under illumination.It has novel application prospects in the field of optoelectronics,memory,and gas detection,etc.In this paper,we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.