信号灯和公交车站对T形路口交通流的影响研究

采用非线性映射模型研究T形路口的交通问题,利用点平均流量指标系统地分析了公交车站、信号灯周期、绿信比、车辆左右转弯等因素对路径交通流量的影响.数值模拟结果表明,信号灯和公交车站之间的相互影响容易导致交通流的串现象,不同路径上的流量与信号灯周期、绿信比和公交车站位置之间存在一定的关系. 关键词： 交通流 非线性映射模型 信号控制 串     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.     

半导体光放大器超快折射率变化动态特性的研究

建立了分析半导体光放大器（SOA）飞秒量级超快动态特性的数值模型,考虑了增益色散以及群速度色散,能更精确地反映飞秒级超短脉冲经过SOA时的传输特性.基于该模型,可以分析由载流子密度脉动以及载流子加热对折射率变化的影响.同时,也考虑了不同的工作条件以及SOA的结构参数对折射率的影响.理论分析和模拟实验为优化SOA的结构、改善SOA飞秒量级超高速动态特性提供了理论指导. 关键词： 半导体光放大器 折射率动态特性 增益色散 群速度色散     

Phase transition,dielectric and piezoelectric properties of NaNbO3–Bi0.5Li0.5TiO3 lead-free ceramics

Lead-free ceramics (1?x)NaNbO₃–xBi_0.5Li_0.5TiO₃ have been fabricated by an ordinary sintering technique, and their electric properties and temperature characteristics have been studied. All the ceramics possess a perovskite structure with orthorhombic symmetry, indicating that (Bi_0.5Li_0.5)TiO₃ diffuses into NaNbO₃ lattices to form a new solid solution. A low (Bi_0.5Li_0.5)TiO₃ doping level transforms the NaNbO₃ ceramics from antiferroelectric to ferroelectric. The ceramics with x ≤ 0.075 are normal ferroelectric, and the ferroelectric-paraelectric phase become diffusives with the doping level of Bi_0.5Li_0.5TiO₃ increasing. As x increases, the Curie temperature of the ceramics decreases linearly, while the relative permittivity ε_r increases. 0.925NaNbO₃–0.075(Bi_0.5Li_0.5)TiO₃ ceramic exhibits the relatively large piezoelectric constant (d₃₃ = 58 pC/N), high Curie temperature (T_C = 228 °C) and good temperature stability, suggesting that the ceramics are one of new possible candidates for lead-free piezoelectric materials.     

聚龙一号装置上首次铝套筒Z箍缩X射线背光照相实验

在聚龙一号脉冲功率装置上首次完成了对带正弦扰动铝套筒Z箍缩的X射线背光照相实验。实验采用千焦耳激光器（1053 nm, 1 kJ, 1 ns）驱动固体靶材产生X射线, 然后利用基于球面晶体的单色背光照相技术以及直接点投影背光照相技术, 成功观测到约7.5 MA电流驱动条件下, Z箍缩铝套筒的外边界不稳定性发展情况。该实验验证了在聚龙一号装置上联合千焦耳激光器开展X射线背光照相实验的能力, 为后续精密Z箍缩物理研究奠定了基础。     

激光加载下铝材料的冲击温度测量

利用神光Ⅱ装置上搭建的用于激光冲击波实验的温度诊断系统（该系统包括高时空分辨的扫描高温计和谱时分辨的扫描高温计）,以强激光加载铝材料冲击温度的测量,获得了铝材料冲击高温辐射发光谱的高时空分辨信号图像,结合灰体辐射理论模型,计算得到了冲击波速度19.06 km/s时铝材料的冲击温度达2.95 eV,该温度与SESAME库中冲击温度接近。研究结果表明采用该测温系统能够有效诊断金属材料的冲击温度,为后续进一步获取金属材料冲击温度数据奠定了基础。     

介质壁直线加速器加速单元间的电路耦合及解耦

中国工程物理研究院流体物理研究所研发的介质壁直线加速器是基于固态脉冲形成线、GaAs光导开关和高梯度绝缘介质壁三项关键技术的新型直线脉冲加速器。在加速器调试阶段,测量出获得加速的质子束流能量远低于预期值,在排除功率源负载能力因素之后,发现脉冲功率源因连接回路引起的电路耦合效应是导致束流能量低的主要原因。基于介质壁直线加速器加速单元放电回路结构的分析,确认了加速单元之间的电路耦合的必然性。并通过测量回路电流,研究了几种不同工作模式下的电路耦合效应。结合电路耦合的特点,给出了两种基于磁芯隔离的解耦方法,并测量了这两种方法的解耦效率。     

滚边法测量高能X射线源焦斑大小

应用于高能闪光X光照相技术的X射线源焦斑大小是闪光照相装置的关键参数, 直接影响成像的分辨能力。由于高能X射线的强穿透性和强辐射环境, 给焦斑测量带来一定困难。介绍了一种间接测量方法, 采用滚边装置(rollbar)成像得到X射线源的边扩展函数, 微分后得到光源的线扩展函数并计算调制传递函数(MTF), 而后从MTF为0.5所对应的空间频率之值确定出光源的光斑大小。给出了神龙二号加速器电子束聚焦调试实验中得到的X射线焦斑测量结果, 分析影响测量结果的因素并提出了解决方法。     

Microstructure and anti-oxidation property of CrSi2-SiC coating for carbon/carbon composites

To protect carbon/carbon (C/C) composites from oxidation, a new type of oxidation protective coating has been produced by a two-step pack cementation technique. XRD and SEM analysis show, the coating obtained by the first step pack cementation was a porous β-SiC structure, and a new phase of CrSi₂ was generated in the porous SiC coating after heat-treatment according to the second step pack cementation process. Oxidation test shows that, the weight loss of the SiC coated C/C is up to 11.26% after 5 h oxidation in air at 1773 K, and the weight loss of the CrSi₂-SiC coated C/C composites is only 4.15% after oxidation in air at 1773 K for 34 h. The oxidation of C/C composites was primarily due to the reaction of C/C matrix and oxygen diffusing through the penetrable cracks in the coating.