CHAOS FOR MIXING TRANSFORMATIONS

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Enhanced Terahertz Phonon Polariton in Lithium Niobate Chip

Terahertz (THz) phonon polaritons, fundamental quasi-particles that couple lattice vibrations with electromagnetic fields at THz frequencies, are found in a variety of materials that offer the potential for a wide range of THz optoelectronic devices and on-chip integrated systems. However, these compact devices and on-chip systems are hampered by the absence of on-chip powerful THz phonon polariton sources. In this study, the efficient generation and amplification of THz phonon polaritons are proposed and directly visualized on a lithium niobate (LN) chip via a tilted pulsefront phase matching technique. By combining lateral pumping and phase matching schemes, two orders of magnitude are successfully attained in the interaction distance between the pump light and the LN chip, accompanied by a substantial amplification of generated THz phonon polariton. The results of this study may lead to abundant potential applications in chip scale THz photonic devices and systems based on LN materials and its integrated heterostructures.     

A new non-perturbative approach in quantum mechanics for time-independent Schr?dinger equations

A new non-perturbative approach is proposed to solve time-independent Schr?dinger equations in quantum mechanics.It is based on the homotopy analysis method(HAM)that was developed by the author in 1992 for highly nonlinear equations and has been widely applied in many fields.Unlike perturbative methods,this HAM-based approach has nothing to do with small/large physical parameters.Besides,convergent series solution can be obtained even if the disturbance is far from the known status.A nonlinear harmonic oscillator is used as an example to illustrate the validity of this approach for disturbances that might be one thousand times larger than the possible superior limit of the perturbative approach.This HAM-based approach could provide us rigorous theoretical results in quantum mechanics,which can be directly compared with experimental data.Obviously,this is of great benefit not only for improving the accuracy of experimental measurements but also for validating physical theories.     

Quantum Thermalization and Vanishing Thermal Entanglement in the Open Jaynes–Cummings Model

The quantum thermalization of the Jaynes–Cummings (JC) model in both equilibrium and non-equilibrium open-system cases is studied, in which the two subsystems, a two-level system and a single-mode bosonic field, are in contact with either two individual heat baths or a common heat bath. It is found that in the individual heat-bath case, the JC model can only be thermalized when either the two heat baths have the same temperature or the coupling of the JC system to one of the two baths is turned off. In the common heat-bath case, the JC system can be thermalized irrespective of the bath temperature and the system–bath coupling strengths. The thermal entanglement in this system is also studied. A counterintuitive phenomenon of vanishing thermal entanglement in the JC system is found and proved.     

Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking

The two-dimensional (2D) C₃N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C₃N via stacking or forming nanoribbon, bandgap modulation of bilayer C₃N nanoribbons (C₃NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C₃N by cutting it into hydrogen passivated C₃NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C₃NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C₃NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C₃NNRs are larger than that of C₃N nanosheet. More interestingly, AC-C₃NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C₃NNR, the bandgaps of bilayer C₃NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C₃N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.     

羟基对界面水分子的扰动与其对非离子型氢氟烃杂化表面活性剂聚集行为的改变

本文合成并比较了具有和不具有羟基的两种非离子型氢氟烃杂化表面活性剂,它们均表现出良好的热稳定性和优异的表面活性. 实验观察到羟基对改变其溶液的表面张力和所形成胶束的形态具有较大的影响. 该作用可归因于烷烃基团从空气/水表面上方到其下方的重排以及由羟基诱导的界面水结构的扰动. 本工作提供了一种通过修改界面处的取向结构来弱化碳氢链和碳氟链之间的不混溶性,从而利于设计具有不同界面性质表面活性剂的策略.     

低阈值单横模852nm半导体激光器

基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础.     

一种基于双波长的光声测温技术

光声测温是一种利用光声效应来进行温度监控的新方法,具有非侵入式、高灵敏度和探测深度较深等优点.但现有的单波长光声测温方法极易受到系统及测量环境干扰而导致测量精度降低.为了解决这一问题,本文提出了一种双波长光声温度测量方法.在光声测温理论的基础上,分析推导了双波长光声测温的基本原理,并进行了仿体及离体组织样品的双波长光声测温实验.实验结果显示,与传统单波长模式相比,双波长模式下的光声温度测量误差明显减小,测量精度平均提高35%以上.研究结果表明双波长光声测温方法能够有效提高光声温度测量的精度和稳定性,可作为一种更精准的光声温度监控方法应用于医疗手术等领域.     

平面团簇稳定结构的蒙特卡罗树搜索

以平面团簇为例提出了一种结合结构识别和蒙特卡罗树技术搜索稳定结构的新方法.体系原子之间的相互作用由两类模型势能函数来描述:Lennard-Jones二体势函数与基于Lennard-Jones势的三体势函数.考虑可能的三角晶格碎片作为候选结构,引入编号策略对结构进行快速识别,并运用蒙特卡罗树搜索研究稳定结构随着原子数增大的演化过程;对于能量较低的候选结构,进一步采取局域优化来获得对应体系的稳定结构.计算表明,Lennard-Jones二体势函数对应的三角晶格团簇更稳定;在特定的参数下,三体势函数对应的六角晶格团簇更稳定.结合结构识别和蒙特卡罗树搜索可以对候选结构空间进行高效扫描,在较短时间内更容易搜索到稳定的团簇结构,并可以与第一原理计算结合实现材料的结构预测.     

掺钕微球的受激辐射激光和自受激拉曼散射

采用溶胶-凝胶法在SiO_2微球表面覆盖上一薄层Nd~(3+)掺杂SiO_2,并经电极放电熔融后形成表面光滑的高Q值微球.采用锥光纤将808 nm的抽运激光耦合入钕离子掺杂的高Q值微球形成回廊模,激发产生了1080—1097 nm波段受激辐射激光.由于所产生的激光有足够高的功率密度,在高Q SiO_2微球中激发产生了波长为1120—1143 nm一级自受激拉曼散射激光.推导了锥光纤掺钕微球组合的自受激拉曼散射的输出功率和阈值公式.描述了输出激光的特性:阈值、输出功率、线宽、边模抑制比.