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161.
162.
在超高真空分子束外延(MBE)生长技术中,反射式高能电子衍射仪(RHEED)能实时显示半导体和金属外延生长过程,给出薄膜表面结构和平整度的信息,成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导(YBa2Cu3O7) 、铁电薄膜(Sr1-xBax TiO3)及它们的同质和异质外延结构的生长机理,获得高质量的符合各种应用 需要的氧化 物多层薄膜结构,在常规的制备氧化
关键词:
高温超导薄膜
RHEED 相似文献
163.
164.
The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials. 相似文献
165.
We establish some liminf theorems on the increments of a (N,d)-Gaussian process with the usual Euclidean norm, via estimating upper bounds of large deviation probabilities on the suprema
of the (N,d)-Gaussian process.
This revised version was published online in June 2006 with corrections to the Cover Date. 相似文献
166.
Optical characterization of bromo-alkoxyl-substituted copper phthalocyanine derivative thin films 总被引:2,自引:0,他引:2
A series of thin films of copper phthalocyanine derivatives with bromine and alkoxyl substituents [CuPc(OC8H17)4Brm, m=0,1,2,4] were prepared on single-crystal silicon substrates by spin coating. The ellipsometric spectra of the films have been studied on a rotating analyzer–polarizer type of scanning ellipsometer. The optical, dielectric constants and absorption coefficients of the films in 500–800 nm wavelength region were obtained. The results show that the complex refractive index, dielectric constants and absorption coefficient of these thin films are influenced regularly by bromine substituent on conjugated macrocycle. It was found that there are approximately linear relationships between the resonance absorption wavelengths of the films and the average number of bromine atoms substituted on the phthalocyanine ring. 相似文献
167.
The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl3 gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl3 were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface. 相似文献
168.
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170.
The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional
solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time
play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t
1/2, which is consistent with the theoretical model.
Supported by the National Science Foundation of China (Grant No. 50395102) 相似文献