Eye tissue structure and refraction alterations upon nondestructive laser action

A new approach to alterations in eye refraction upon nondestructive laser action on the sclera and cornea is studied. It is demonstrated in in vivo experiments on rabbit eyes that sequential laser irradiation of the sclera and cornea yields a significant alteration in the eye refraction. The collagen structure of the sclera and cornea is studied after the nondestructive laser action with noninvasive polarization-sensitive optical coherence tomography. It is demonstrated that collagen fibers that provide for the cornea tension and applanation partially survive in the zone of the local denaturation of sclera. An irradiation mode that corresponds to an increase in the cornea’s plasticity and does not cause visible structural changes is chosen. The simplest theoretical model for alterations in the eye refraction upon the nonablative laser action on sclera is analyzed. The alteration in the cornea curvature upon stretching resulting from the local sclera coagulation and the corresponding decrease in its volume is calculated. The model makes it possible to approximately estimate the laser irradiation modes that provide the desired alterations in eye refraction.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

Products of mixed covering arrays of strength two

A covering array CA(N;t,k, v is an N × k array such that every N × t subarray contains all t‐tuples from v symbols at least once, where t is the strength of the array. Covering arrays are used to generate software test suites to cover all t‐sets of component interactions. The particular case when t = 2 (pairwise coverage) has been extensively studied, both to develop combinatorial constructions and to provide effective algorithmic search techniques. In this paper, a simple “cut‐and‐paste” construction is extended to covering arrays in which different columns (factors) admit different numbers of symbols (values); in the process an improved recursive construction for covering arrays with t = 2 is derived. © 2005 Wiley Periodicals, Inc. J Combin Designs 14: 124–138, 2006     

Mathematical modeling of flows through inelastic porous solids

We propose a framework, based on classical mixture theory, to describe the isothermal flow of an incompressible fluid through a deformable inelastic porous solid. The modeling of the behavior of the inelastic solid takes into account changes in the elastic response due to evolution in the microstructure of the material. We apply the model to a compression layer problem. The mathematical problem generated by the model is a free boundary problem.     

Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si

The influence of processing parameters on the electrical characteristics of RuO₂/LaAlO₃/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO₃ on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO₃ film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO₃ on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc     

Some Estimates for the Derivative of a Quasiconformal Reflection Spiral-Shaped Domains

Some estimates of derivatives are sharpened for quasiconformal reflections of a special class of simply connected plane domains. Bibliography: 2 titles.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Transverse effects under four-wave coupling in the nonlinear Fabry-Perot interferometer

Optics and Spectroscopy - Specific features of the light-beam transverse structure transformation in the process of four-wave coupling in the Fabry-Perot interferometer with a resonant nonlinearity...     

Mod 2 cohomology of combinatorial Grassmannians

Matroid bundles, introduced by MacPherson, are combinatorial analogues of real vector bundles. This paper sets up the foundations of matroid bundles. It defines a natural transformation from isomorphism classes of real vector bundles to isomorphism classes of matroid bundles. It then gives a transformation from matroid bundles to spherical quasifibrations, by showing that the geometric realization of a matroid bundle is a spherical quasifibration. The poset of oriented matroids of a fixed rank classifies matroid bundles, and the above transformations give a splitting from topology to combinatorics back to topology. A consequence is that the mod 2 cohomology of the poset of rank k oriented matroids (this poset classifies matroid bundles) contains the free polynomial ring on the first k Stiefel-Whitney classes.