A novel Pt/C‐catalyzed transfer hydrogenation reaction of p‐benzoquinone to produce p‐hydroquinone using cyclohexanone as an unexpectedly effective hydrogen source

A new method for the production of p‐hydroquinone via a Pt/C‐catalyzed reduction of p‐benzoquinone is developed. Different from the conventional transfer hydrogenation reactions that usually use secondary alcohols such as isopropanol as the hydrogen source, in this work, it is unexpectedly found that cyclohexanone is a more effective hydrogen source than secondary alcohols, even cyclohexanol. This reaction affords acceptable yields of p‐hydroquinone with very high turnover number (1109) of the Pt/C catalyst. A mechanism of this interesting reaction is proposed on the basis of the results of a series of control experiments, GC–MS analysis as well as dynamic studies.     

光声门图理论、实验与应用

首次建立了光声门图数学模型。以相乘同态信号模型和对声带振动的研究结果为基础,提出、研究并实现了光声门图信号数字处理。仪器使用结果表明,光声门图技术对喉科学、艺术嗓音、语言学、语音声学及语言信号数字处理等领域具有广泛和重要的应用价值。     

直流电机的数字同步锁相

在某高速摄影机中,我们采用了同步数字锁相环路,本文叙述该机中直流电机的数字同步锁相原理及其所用数字相位误差积分器线路的构成。     

喇曼型无引导场自由电子激光实验

EPA-74脉冲线加速器二极管改用凹面聚焦阴极产生束流,从有栅网阳极孔引出后,通过磁透镜将束流注进长1.5m,周期长3.45cm的双绕螺旋摇摆器中,摇摆器磁场为1.25kGs时,进入摇摆器均匀区的束流为280A,传输到均匀区末端束流130A。实验得到130dB/m的增长率和辐射输出饱和现象,饱和功率7.6MW,效率5％。由波导色散线和微波量热计分别测得辐射频率为37GHz和辐射能量48mJ。辐射波模为TE_(11)圆波模。     

半导体中多光子吸收跃迁速率的全量子理论分析

本文从非线性光学中辐射跃迁速率的表达式出发,在全量子理论下,导出了半导体中任意阶多光子吸收跃迁速率的一般表达式。理论分析结果表明,n光子吸收跃迁速率与光强的n次方和n阶光子相干度成正比。本文在多能带及二能带理论模型下,对多光子吸收跃迁速率的一般表达式进行了化简,并对非线性相互作用项对跃迁速率的贡献,作了讨论。     

MNA/PMMA有机薄膜光波导

研究出MNA/PMMA有机薄膜光波导。用棱镜耦合器进行了波导参数的测量,发现薄膜呈现各向异性,有较大的双折射。     

CCD狭缝摄象

在过去的几十年中,各靶场已广泛应用狭缝摄影对种种飞行弹丸的多项重要技术参数进行测试,它在许多测试项目中应用的有效性、广泛性和经济性已被人们所肯定。据报道,在国外的一些靶场所进行的发射试验中,狭缝摄影机曾占全部测试设备中所使用的摄影仪器的百分之九十,这是因为狭缝摄影有其独特的、其它方法不可比拟的优点。     

凸直觉模糊映射

在模糊数、凸模糊映射和凸直觉模糊集定义基础上,给出了直觉模糊数及其序的定义,给出了凸直觉模糊映射的定义并讨论其有关性质,在此基础上,研究了凸直觉模糊规划问题。     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。     

Randomly censored partially linear single-index models

This paper proposes a method for estimation of a class of partially linear single-index models with randomly censored samples. The method provides a flexible way for modelling the association between a response and a set of predictor variables when the response variable is randomly censored. It presents a technique for “dimension reduction” in semiparametric censored regression models and generalizes the existing accelerated failure-time models for survival analysis. The estimation procedure involves three stages: first, transform the censored data into synthetic data or pseudo-responses unbiasedly; second, obtain quasi-likelihood estimates of the regression coefficients in both linear and single-index components by an iteratively algorithm; finally, estimate the unknown nonparametric regression function using techniques for univariate censored nonparametric regression. The estimators for the regression coefficients are shown to be jointly root-n consistent and asymptotically normal. In addition, the estimator for the unknown regression function is a local linear kernel regression estimator and can be estimated with the same efficiency as all the parameters are known. Monte Carlo simulations are conducted to illustrate the proposed methodology.