Investigation of the A2Σ- state of CuO by laser-induced fluorescence

The laser-induced fluorescence excitation spectrum of the A²Σ^－X²Π_3/2 transition of CuO in the 540－620nm region has been studied, where the CuO molecule was produced by using the technique of dc discharge reaction under a supersonic condition. We have recorded and rotationally analysed the 0－0, 1－0, 2－0 and 3－0 bands. The rotational constants of the upper state A²Σ^- were determined and vibrational constants improved. In addition, the lifetime measurement for the A²Σ^- state was carried out under the collision-free condition, and the lifetimes obtained are 469±2, 456±2, 488±3 and 490±4ns for v'=0, v'=1, v'=2 and v'=3 levels, respectively.     

Implementation of nonlocal quantum swap operation on two entangled pairs

We propose a scheme for the implementation of nonlocal quantum swap operation on two spatially separated entangled pairs and we show that the operation can swap two qubits of these entangled pairs.We discuss the resources of the entangled qubits and classical communication bits required for the optimal implementation of the nonlocal quantum swap operation.We also put forward a scheme for probabilistic implementation of nonlocal swap operation via a nonmaximally entangled quantum channel.The probability of a successful nonlocal swap operation is obtained by introducing a collective unitary transformation.     

Mass distribution in n—polymer stochastic aggregation and large—mass behaviour

The exact solutions of the rate equations of the n-polymer stochastic aggregation involving two types of clusters, active and passive for the kernel \dprⁿ_k=1s_(ik)(s_(ik)=i_k) and \dsumⁿ_k=1s_(ik)(s_(ik)=i_k), are obtained. The large-mass behaviours of the final mass distribution of the active and passive clusters have scaling-like forms, although the models exhibit different properties. Respectively, they have different decay exponents γ=\dfrac{2n+1}{2(n-1)} and γ=q+\dfrac{2n+1}{2(n-1)} for \dprⁿ_{k=1}s(ik)(s(ik)=ik) and γ=\dfrac 3{2(n-1)} and γ=q+\dfrac 3{2(n-1)} for \dsumⁿk=1}s(ik)(s(ik)=ik), which include exponents of two-polymer stochastic aggregation. We also find that gelation is suppressed for kernel \dprⁿk=1s(ik)(s(ik)=ik) which is different from the deterministic aggregation.}     

The isolated critical value phenomenon in local－global riddling bifurcation

A chaotic synchronized system of two coupled skew tent maps is discussed in this paper. The locally and globally riddled basins of the chaotic synchronized attractor are studied. It is found that there is a novel phenomenon in the local－global riddling bifurcation of the attractive basin of the chaotic synchronized attractor in some specific coupling intervals. The coupling parameter corresponding to the locally riddled basin has a single value which is embedded in the coupling parameter interval corresponding to the globally riddled basin, just like a breakpoint. Also, there is no relation between this phenomenon and the form of the chaotic synchronized attractor. This phenomenon is found analytically. We also try to explain it in a physical sense. It may be that the chaotic synchronized attractor is in the critical state, as it is infinitely close to the boundary of its attractive basin. We conjecture that this isolated critical value phenomenon will be common in a system with a chaotic attractor in the critical state, in spite of the system being discrete or differential.     

An open plus nonlinear closed loop control of chaotic oscillators

An open plus nonlinear closed loop control law is presented for chaotic oscillations described by a set of nonautonomous second-order ordinary differential equations.It is proven that the basins of entrainment are global when the right-hand sides of the equations are given by arbitrary polynomical functions.The forece Duffing oscillator and the forced van der Pol oscillator are treated as numerical examples to demonstrate the applications of the method.     

Superconductivity and x—ray photoemission study of MgB2 thin films

Highly c-axis oriented MgB2 thin films with Tc^onset of 39.6K were fabricated by magnesium diffusing into pulsedlaser-deposited boron precursors.The estimation of critical current density Jc,using hysteresis loops and the Bean model,has given the value of 10^7A/cm^2(15K,0T),which is one of the highest values ever reported.The x-ray photoemission study of the MgB2 thin films has revealed that the binding energies of Mg 2p and B 1s are at 49.4eV and 186.9eV,which are close to those of metallic Mg and transition-metal diborides,respectively.     

Fabrication and optical properties of platinum nanowire arrays on anodic aluminium oxide templates

Arrays of Pt nanowires, fabricated by electrodepositing Pt metal into nanoporous anodic aluminium oxide (AAO) templates, exhibit a preferable optical absorption band in the ultraviolet-visible (UV-VIS) spectra and present a blueshift as the wire aspect ratio increases or its radius decreases. This type of optical property of Pt nanowire/porous alumina composites has been theoretically explored using Maxwell－Garnett (MG) effective medium theory. The MG theory, however, is only applicable to nanowires with an infinitesimally small radius relative to the wavelength of an incident light. The nanowire radius is controlled by the pore radius of the host alumina, which depends on anodizing conditions such as the selected electrolyte, anodizing time, temperature and voltage. The nanowire aspect ratios depend on the amount of Pt deposited into the nanopores of AAO films. The optical absorption properties of the arrays of Pt nanowires with diameters of 24, 55 and 90 nm have been investigated by the UV-VIS spectra, which show that the extinction maximum (λ_max) shifts to shorter wavelength side as the wire aspect ratio increases or its radius decreases. The results are qualitatively consistent with those calculated based on the MG theory.     

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002     

Controlling global stochasticity of Hamiltonian systems by nonlinear perturbation

A method of controlling global stochasticity in Hamiltonian systems by applying nonlinear perturbation is proposed. With the well-known standard map we demonstrate that this control method can convert global stochasticity into regular motion in a wide chaotic region for arbitrary initial condition, in which the control signal remains very weak after a few kicks. The system in which chaos has been controlled approximates to the original Hamiltonian system, and this approach appears robust against small external noise. The mechanism underlying this high control efficiency is intuitively explained. Received 15 January 2002 Published online 6 June 2002     

Raman characteristics of carbon nitride synthesized by nitrogen-ion-beam-assisted pulsed laser deposition

Raman characteristics of carbon nitride films synthesized by nitrogen-ion-beam-assisted pulsed laser deposition were investigated. In addition to the D (disorder) band and G (graphitic) band commonly observed in carbon nitride films, two Raman bands located at 1080–1100 and 1465–1480 cm^-1 were found from our carbon nitride films. These two bands were well matched with the predicted Raman frequencies for βC₃N₄ and the observed Raman bands reported for carbon nitride films, indicating their relation to carbon-nitrogen stretching vibrations. Furthermore, the relative intensity ratio of the two Raman bands to the D and G bands increased linearly with increasing nitrogen content of the carbon nitride films. Received: 30 October 2000 / Accepted: 5 February 2001 / Published online: 2 October 2001