Enhanced 2.0 μm emission in oxyfluoride glass-ceramics containing nanocrystals MF2 (MF3): Ho3+,Tm3+ (M = Ca,Ba, and La)

Transparent glass-ceramics containing MF₂(MF₃):Ho³⁺,Tm³⁺ (M = Ca, Ba, and La) nanocrystals have been prepared by melt quenching and subsequent thermal treatment. X-ray diffraction and transmission electron microscopy analysis confirmed the precipitation of MF₂ (MF₃) nanocrystals among the glass matrix. Energy-dispersive X-ray spectroscopy results evidenced the incorporation of Tm³⁺ and Ho³⁺ into the MF₂ nanocrystals. Intense 2.0 μm emission originating from the Ho³⁺: ⁵I₇ → ⁵I₈ transition was achieved upon excitation with 808 nm laser diode. A large ratio of the forward Tm³⁺ → Ho³⁺ energy transfer constant to that of the backward process indicated high efficient energy transfer from Tm³⁺ (³F₄) to Ho³⁺ (⁵I₇), and benefited from the reduced ionic distances of Tm³⁺–Tm³⁺ and Tm³⁺–Ho³⁺ pairs and low phonon energy environment with the incorporation of rare earth ions into the precipitated MF₂ nanocrystals. The results indicate that oxyfluoride glass-ceramic is a promising candidate for 2.0 μm laser.     

Luminescent properties and applications of Tb3+ doped silicate glasses with industrial scales

Tb³⁺ doped X-ray conversion glassy screen with an industrial scale (50 mm × 50 mm × 12 mm) was successfully fabricated, and its luminescent properties and applications in CCD imaging system were investigated. Results showed that Tb³⁺ doped silicate glasses mainly emit weak blue (400–460 nm) and strong green (480–570 nm) fluorescence. With the increase of Tb³⁺ ion concentration, the intensity of green emission increases, but that of blue emission decreases. Gd³⁺ ions can sensitize the luminescence of Tb³⁺ ions among silicate glasses. With the increase of CeO₂ concentration, the luminescent intensity of Tb³⁺ doped silicate glasses at 550 nm quickly decreases. However, the irradiation resistance of Tb³⁺ doped silicate glasses can be effectively improved by CeO₂ addition. The imaging quality of the luminescent glass screen is more excellent than that of Gd₂O₂S polycrystalline screens.     

Luminescence properties of Tb3+/Sm3+ co-doped 38B2O3―31Al2O3―31SrO glasses and glass ceramics

In this paper, Tb³⁺/Sm³⁺ co-doped 38B₂O₃―31Al₂O₃―31SrO glass was successfully prepared. After heat treatment, single crystal phase SrAl₂B₂O₇ was precipitated from the parent glass. DTA data showed the glass transition temperature at 625 °C and a sharp exothermic peak at 860 °C. XRD patterns demonstrated a regular evolution from glass to glass ceramics with higher treatment temperature and longer treatment time. From the XRD patterns, we supposed that Tb³⁺/Sm³⁺ ions can be most likely contained in the crystal phase. The photoluminescence spectra showed that the crystallization can enhance the emission intensity significantly and there could be an optimum crystallization degree to get the strongest luminescence in glass ceramics. The light scattering of devitrification sample can vary the intensity ratio of Sm³⁺ and Tb³⁺ emission. Therefore, as a potential route, rare earth ions doped glass ceramics could be a further research direction of luminescence glasses for white light emitting diodes application.     

Optical constants and band gap expansion of size controlled silicon nanocrystals embedded in SiO2 matrix

Silicon nanocrystals (Si-NCs) with different sizes embedded in SiO₂ matrix were synthesized by phase separation and thermal crystallization of SiO_x/SiO₂ supperlattice approach. The optical constants and band gap expansion of Si-NCs have been investigated by spectroscopic ellipsometry, based on the Maxwell–Garnett effective medium approximation and the Forouhi–Bloomer optical dispersion model. Similar spectra shapes but smaller values of Si-NCs optical constants with respect to bulk crystalline Si is observed. With the size of Si-NCs decreasing from 6 nm to 2 nm, the band gap increases from 1.64 eV to 2.56 eV. The band gap expansion, as compared to bulk crystalline Si, which agrees with the prediction of first-principles calculations based on quantum confinement effect, is presented in this paper.     

A method for evaluating viscosities of metallic glasses from the rates of thermal transformations

The apparent activation energies E(T) for the glass transition and crystallization in Pd_77.6Cu₆Si_16.5 and Pd₄₈Ni₃₂P₂₀ glass are seen to coincide with those for the viscous flow. This implies that both the rates of glass transition and crystallization in metallic glasses scale as the viscosity. Based on this proposition, the viscosity of a Pt₄₅Ni₃₀P₂₅ glass, for example, has been evaluated, by means of thermal measurements, from the glass transition far into the crystallization temperatures. The viscosity η decreases rapidly from 10¹³ P at 480 K to 10⁷ P at 580 K and is described by a Fulcher's expression as η = 10^?3 exp[5950/(T ? 320)].     

Structural investigation of amorphous FeZr,CoZr and NiZr alloys with low zirconium concentration

A structural investigation has been made of alloy glasses a low concentration of zirconium: compositions M_100?xZr_x with M = Fe, Co and Ni, and x = 9 at.% using X-ray diffraction. The characteristic second peak splitting in the radial distribution function is found for all samples presently investigated. The partial radial distribution functions of amorphous FeZr and CoZr alloys were derived from the measured total distribution function data by applying the concentration method with the anomalous scattering technique. The amplitude in the oscillation of the radial distribution function for M-M and M-Zr pairs is more enhanced in comparison with that of glasses with high Zr content, x = 40–45 at.%. The estimated coordination number of nearest neighbor Fe atoms (11.6 ± 0.5) for iron in the Fe₈₄Zr₁₆ glass is larger than that (10.7 ± 0.5) found in the Fe₈₃B₁₇ glass. This is consistent with the measurements of magnetic properties of these glasses with low zirconium concentration. The possible structural features of intertransition metal alloy glasses with low zirconium concentration is also discussed based on the present experimental data.     

Electronic Properties of Ba-Intercalated Fullerides

Abstract

Raman spectra have been measured on Ba_xC₆₀ binary systems for x=3, 4 and 6. The pentagonal pinch Ag(2) mode exhibits a softening in an approximately proportional manner to the formal valence of C₆₀ molecule. This result suggests that the valence of C₆₀ in Ba doped systems are understood by the naive ionic crystal model based on Ba²⁺. The broader Raman peaks in superconducting Ba₄C₆₀ indicates that the electron-phonon interaction is considerably large comparing to those for Ba₃C₆₀ and Ba₆C₆₀.     

Controllable cubic and hexagonal GaN growth on GaAs(0 0 1) substrates by molecular beam epitaxy

Two kinds of GaN samples were grown on GaAs(0 0 1) substrates. One is grown on nitridized GaAs surface, the other is grown on nitridized AlAs buffer GaAs substrate. X-ray diffraction and photoluminescence measurements find that the GaN sample directly grown on GaAs substrate is pure cubic phase and those grown on AlAs buffer is pure hexagonal phase. The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different buffer layers.     

Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers

We have investigated the temperature and excitation power dependence of photoluminescence properties of InAs self-assembled quantum dots grown between two Al_0.5Ga_0.5As quantum wells. The temperature evolutions of the lower- and higher-energy transition in the photoluminescence spectra have been observed. The striking result is that a higher-energy peak appears at 105 K and its relative intensity increases with temperature in the 105–291 K range. We demonstrate that the higher-energy peak corresponds to the excited-state transition involving the bound-electron state of quantum dots and the two-dimensional hole continuum of wetting layer. At higher temperature, the carrier transition associated with the wetting layer dominates the photoluminescence spectra. A thermalization model is given to explain the process of hole thermal transfer between wetting layer and quantum dots.     

High-density silicon and silicon nitride cones

High-density cone-shaped silicon and silicon nitride have been synthesized on Si(1 0 0) substrates via plasma-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen, hydrogen and methane. Aligned silicon cones containing 3–10 at% C and N have been formed with less than 1 h growth. Further growth can lead to the increase of cone size and density, as well as to the formation of polycrystalline silicon nitride films on the tip and surface. The formation of these materials is thought to be due to the remodification of Si substrates under the effect of plasma and active C and N species. Different nucleation and growth styles were obtained under different growth conditions and reactive gas mixtures.