TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.     

Reactive Compatibilization of Poly(Butylene Terephthalate)/Acrylonitrile-Styrene-Acrylate Blends by Epoxy Resin: Morphology and Mechanical Properties

The effect on the notched Izod impact strength of poly(butylene terephthalate) (PBT) by blending it with acrylonitrile-styrene-acrylate (ASA) was examined. Epoxy resin (ER) was demonstrated to be an efficient compatibilizer for the partially compatible blends of PBT/ASA. It requires only a very small amount of ER to improve the toughness of the PBT/ASA blends drastically. Furthermore, there exists an optimum proportion of ER added to achieve maximum notched Izod impact strength. Transmission electron microscopy (TEM) observation suggests that the ER in the PBT/ASA/ER blends suppressing the tendency of coalescence of ASA, leading to better dispersion of the ASA particles. Field emission scanning electron microscopy (FESEM) shows that ER enhances the phase dispersion and the interfacial adhesion between the PBT and ASA phases, it improves the compatibility between PBT and ASA. The compositions in the interphase was continuous, which results in multiphase composites with a graded interphase. It is suggested that enhanced interphase adhesion was necessary to obtain improved dispersion, fine phase morphology, and better toughness.     

一种双模压缩微波制备的相位锁定方案

相位锁定是双模压缩微波制备的关键问题之一.针对基于超导180°混合环的制备方案相位稳定度不高且信息处理复杂等问题,提出一种相位锁定方案.对约瑟夫森参量放大器的信号输入进行相位调制,输出的单模压缩微波与另一未调制的同频单模压缩微波在超导180°混合环内干涉,实现双模压缩微波的制备与路径分离.将未调制的单模压缩微波与一路双模压缩微波混频,解调出相位调制信号可得到两路单模压缩微波的相对相位及误差,将相位误差反馈于约瑟夫森参量放大器的抽运实现相对相位的锁定,获得稳定的双模压缩输出.本研究对高性能纠缠微波源的设计提供了理论参考.     

铜铁镁三掺铌酸锂晶体的第一性原理研究

利用基于密度泛函理论的第一性原理,研究了Cu:Fe:Mg:LiNbO3晶体及对比组的电子结构和光学特性.研究显示,单掺铜或铁铌酸锂晶体的杂质能级分别由Cu 3d轨道或Fe 3d轨道贡献,禁带宽度分别为3.45和3.42 eV;铜、铁共掺铌酸锂晶体杂质能级由Cu和Fe的3d轨道共同贡献,禁带宽度为3.24 eV,吸收峰分别在3.01,2.53和1.36 eV处;Cu:Fe:Mg:LiNbO3晶体中Mg^2+浓度低于阈值或高于阈值(阈值约为6.0 mol%)的禁带宽度分别为2.89 eV或3.30 eV,吸收峰分别位于2.45 eV,1.89 eV或2.89 eV,2.59 eV,2.24 eV.Mg^2+浓度高于阈值,会使吸收边较低于阈值情况红移;并使得部分Fe^3+占Nb位,引起晶体场改变,从而改变吸收峰位置和强度.双光存储应用中可选取2.9 eV作为擦除光,2.5 eV作为读取和写入光,选取Mg^2+浓度达到阈值的三掺晶体在增加动态范围和灵敏度等参量以及优化再现图像的质量等方面更具优势.     

Microstructure and Thermal and Tensile Properties of Poly(vinyl alcohol) Nanocomposite Films Reinforced by Polyacrylamide Grafted Cellulose Nanocrystals

Abstract

Polyacrylamide grafted cellulose nanocrystals (CNC-g-PAM) were incorporated into poly(vinyl alcohol) (PVA) by a solution casting method to fabricate nanocomposite films with enhanced thermal and tensile properties. The microstructure and the thermal and tensile properties of the PVA/CNC-g-PAM nanocomposite films were investigated as a function of CNC-g-PAM content. Infrared spectroscopy corroborated the presence of hydrogen bonds between PVA and the PAM on the surface of the CNC. Polarized optical microscopy and scanning electron microscopy revealed good dispersion of the CNC-g-PAM in the PVA matrix and good interfacial compatibility. Accordingly, the initial degradation temperature of the nanocomposite films was elevated slightly compared to pristine PVA film. The glass transition temperature, melting temperature, and crystallinity of the PVA also varied slightly after the incorporation of the CNC-g-PAM. At both 0% and 50% RH, the nanocomposite films showed an obvious increase of elastic modulus, no apparent change of breaking strength and a drastic reduction of elongation at break with increasing CNC-g-PAM content.     

基于PdSe2/GaAs异质结的高灵敏近红外光伏型探测器的制备和图像传感的应用

本文制备了一种基于PdSe₂/GaAs异质结的高灵敏近红外光电探测器,该探测器是通过将多层PdSe₂薄膜转移到平面GaAs上制成的. 所制备的PdSe₂/GaAs异质结器件在808 nm光照下表现出明显的光伏特性,这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明,这种杂化异质结在零偏电压和808 nm光照下具有1.16×10⁵的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×10¹¹ Jones. 而且,该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后,近红外光电探测器的光电特性几乎没有下降,这归因于PdSe₂的良好稳定性. 最后,基于PdSe₂/GaAs的异质结器件还可以用作近红外光传感器.     

一种超导重力仪磁悬浮力的等效计算

为实现超导重力仪磁悬浮力的精确计算,以GWR型超导重力仪为模型基础,采用有限元的思想,将超导球表面电流理想化为多个等高共轴电流环,计算出各个电流环与超导线圈的作用力,求和得到线圈与超导球间的磁悬浮力。利用MATLAB完成计算程序实现,通过改变下线圈电流和上、下线圈电流比,获得满足一定条件的磁悬浮力及其梯度。选取合适的模型参数,计算出线圈对质量为m=4.069 g超导球的磁悬浮力大小为:Ftotal=3.988×10^-2N,磁悬浮力梯度为:-9.699×10^-3N/m,此时悬浮力梯度合适,满足系统稳定性和灵敏度的要求。     

衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响

本文研究了不同衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响,当300℃≤T≤380℃时,Ga液滴演化成纳米孔(Nanohole)和盘状结构(diffusion halo),纳米结构的尺寸随温度升高而增大.当T≥385℃时,盘状结构消失,形成一定平坦的Al_xGa_(1-x)As薄膜,Ga液滴在界面处继续向下刻蚀直至耗尽,形成平均直径为75 nm,平均孔深为5.52 nm的纳米孔.本文还通过盘状结构测出平均扩散长度△R,并拟合出Ga原子在Al_(0.4)Ga_(0.6)As表面的激活能E_A=0.78(±0.01) eV和扩散前因子D_0=0.15(×4.1~(±1))10~(-2 ) cm~2s~(-1).     

DCEL材料的包铜新工艺

通过包铜过程的分析,了解到包铜反应主要是表面化学吸附反应,ZnS颗粒表面状况对生成的CuxS性质影响很大,据此设计了淬火包铜工艺,并得到形成功率较低,抗老化性能好的DCEL粉.本文初步分析了淬火生成的CuxS相,认为它的初态处于一种高度无序状击,经一段时间可自然发生某种相变.新相比较稳定,从而可能抑制由Cu+迁移造成的老化.     

XGS—12型高速电影摄影机

XGS-12型摄影机是西安光机所新近推出的又一种16mm棱镜补偿式高速电影摄影机,其画幅尺寸为7.5×10.4mm~2时的最高拍摄频率为11000fps。该机性能优异,附件齐全,本文对该机将从光学系统摄影机和电控制系统三个部分加以介绍。