带隙法测定SiGe/Si材料的应变状态

从固体模型理论的结果出发，计算了生长于Si（100）衬底上x值小于085的Si_1-xGe_x合金材料（能带结构为类Si结构）的间接带隙与应变的关系，结 果表明，应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果，提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度，两者可以较好的符合，表明带隙法测量SiG e应变弛豫度是可行的. 关键词： SiGe合金 应变 带隙     

掺CH4的SiCOH低介电常数薄膜结构与介电性能研究

以十甲基环五硅氧烷和甲烷作为反应气体，采用电子回旋共振等离子体化学气相沉积(ECR-C VD)方法制备了k = 2.45，485℃下的热稳定性优良的SiCOH低介电常数薄膜.通过薄膜结构的 FTIR谱分析，比较了十甲基环五硅氧烷(D5)液态源和不同甲烷流量下制备的薄膜的键结构差 异，发现在沉积过程中甲烷含量的增大，一方面有利于D5源环结构的保留，另一方面有利于 薄膜中形成高密度的CH_n基团.高密度碳氢大分子基团的存在降低了薄膜密度， 结合薄膜中形成的本构孔隙、低极化率Si—C键以及—OH键减少的共同作用，导致薄膜介电 常数的降低. 关键词： 低介电常数 SiCOH薄膜 碳氢掺杂     

激光防护材料注塑加工工艺的研究

采用聚碳酸酯为基材,掺杂激光吸收剂制备了防530nm和1060nm波长激光的防护材料,通过对加工温度和混合料在料筒中停留时间的研究,确定了材料的加工温度为280℃,混合料在料筒中的时间为3min,确定了防护材料的加工工艺条件,并对其光学密度、激光防护能量、可见光透过率和抗冲击强度进行了测试。结果表明防护材料在530nm和1060nm波长的光密度大于4,其防激光能量达150mJ,可见光透过率为17%,抗冲击强度高,完全可以满足一般激光防护材料的要求。     

Measurement of time-dependent CP-violating asymmetries in B0 --> K(s)0K(s)0K(s)0 decay

We present a measurement of CP-violation parameters in the B0 --> K(s)0K(s)0K(s)0 decay based on a sample of 275 x 10(6) BB pairs collected at the upsilon(4S) resonance with the Belle detector at the KEKB energy-asymmetric e+e- collider. One neutral B meson is fully reconstructed in the decay B0 --> K(s)0K(s)0K(s)0, and the flavor of the accompanying B meson is identified from its decay products. CP-violation parameters are obtained from the asymmetry in the distributions of the proper-time interval between the two B decays: S = +1.26 +/- 0.68(stat) +/- 0.20(syst) and [symbol: see text] = +0.54 +/- 0.34(stat) +/- 0.09(syst).     

Observation of the D1(2420)-->Dpi + pi- decays

We report on the first observation of D0/1(2420)-->D0pi- pi+ and D+/1(2420-->D+ pi- pi+ decays (where the contribution from the dominant known D1-->D*pi decay mode is excluded) in the B- -->D0/1pi-) and (-)B0-->D+/1pi- decays, respectively. The observation is based on 15.2 x 10(7) B(-)B events collected with the Belle detector at the KEKB collider. We also set 90% confidence level upper limits for the branching fractions of the four following decays: B- -->D0/1pi-, D01-->D(*0)pi- pi+, (-)B0-->D+/1pi-, D+/1-->D(*+) pi- pi+, B- -->D(*0)2(2460)pi-, D(*0)2 -->D(*0) pi- pi+, (-)B0-->D(*+)2(2460)pi-, D(*+)2-->D(*+)pi- pi+.     

Search for D0-D0 mixing in D0 --> K+ pi(-) decays and measurement of the doubly-Cabibbo-suppressed decay rate

We have searched for mixing in the D(0)-D (0) system by measuring the decay-time distribution of D(0) --> K(+) pi(-) decays. The analysis uses 90 fb(-1) of data collected by the Belle detector at the KEKB e(+) e(-) collider. We fit the decay-time distribution for the mixing parameters x' and y' and also for the parameter R(D), which is the ratio of the rate for the doubly-Cabibbo-suppressed decay D(0)--> K+ pi(-) to that for the Cabibbo-favored decay D(0)--> K-pi(+). We do these fits both assuming CP conservation and allowing for CP violation. We use a frequentist method to obtain a 95% C.L. region in the x'(2) - y' plane. Assuming no mixing, we measure R(D) = (0.381 +/- 0.017(+0.008)(-0.016))%.     

基于二维光栅分光的同步移相干涉测量技术

为了干涉测量的抗振目的,提出了一种新的同步移相干涉测量方案并搭建了实验装置。整个测量系统在迈克耳孙偏振移相干涉仪的基础上,利用一个正交的二维光栅产生对称分光,选取对于理想光栅衍射效率一致的(±1,±1)级衍射光作为测量分光路,使之分别通过偏振方向依次相差45°的一个偏振片组,从而分别形成0°、90°、180°和270°相移的四幅移相干涉图,按照传统的四步移相算法,对被测波面进行了复原。分析了光强畸变和移相误差对系统的测量误差的影响。利用该系统测量一球面系统,结果与在ZYGO干涉仪上相比较,球面系统的均方根误差相差0.012λ,峰谷值相差0.051λ。     

The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors

The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors （E-mode HEMTs） are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad （Si）, the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

射流冲击模型在水下爆炸实验中的应用研究

 为研究射流冲击载荷对结构的作用效果,从理论和数值角度研究了射流的载荷特性,以舱段模型实验为研究对象,建立了射流计算模型,结合实验数据,对射流冲击问题进行了分析。结果表明,射流冲击能够造成结构强烈的局部响应,某些情况下,射流冲击载荷引起的结构响应甚至比冲击波载荷引起的响应更大。因此,中近场水下爆炸实验需要考虑射流的影响。建立的射流模型能够较好地反映射流冲击的载荷特性,为水下爆炸实验分析提供了一种新的手段。     

不同水底介质对有限域中装药沉底爆炸特性的影响

通过开展装药沉底爆炸原理性实验研究,得到了不同水底条件对装药沉底爆炸气泡运动和冲击波压力的影响规律:沉底装药水下爆炸气泡通常呈半球形,依附在水底并同时急剧膨胀达到最大半径,随后气泡做收缩运动并连带水底介质颗粒迅速上浮,同时形状发生显著变化,如在石底和泥底时气泡在水底射流的作用下呈蘑菇状上浮,砂底时气泡则呈现出柱状上浮、未出现明显脉动运动即已坍塌破裂;沉底爆炸与水底介质发生强烈耦合作用而形成不同程度的反射波,通常水下石底的反射冲击波较泥底和砂底更强烈,且一般迭加后的冲击波峰值压力高于入射波阵面压力;不同水底介质条件下,装药与水底发生的强烈耦合作用均对水底造成强冲击破坏。