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101.
Hongrui Zhang Mingju Chao Mingyi Gao Liwen Zhang Jianquan Yao 《Optics & Laser Technology》2003,35(6):573-449
A fiber-coupled diode-single-end-pumped Nd:YVO4 laser with an Nd:YVO4 crystal of 0.3 at% doping concentration and 3×3×10 mm3 dimensions was reported. 14.850 W of continuous-wave output power in an M2 factor of 1.12 was obtained under pump power of 27.365 W, with an optical conversion efficiency of 60.49%, and a slope efficiency of 64.5%. 相似文献
102.
L. K. Seah U. S. Dinish S. K. Ong Z. X. Chao V. M. Murukeshan 《Optics & Laser Technology》2004,36(5):371-376
Imaging of latent fingerprints using time-resolved (TR) method offers a broader platform to eliminate the unwanted background emission. In this paper, a novel TR imaging technique is demonstrated and implemented, which facilitates the detection of latent fingerprints with nanosecond resolution. Simulated experiments were carried out with two overlapping fingerprints treated with two fluorescent powders having different lifetimes in nanosecond range. The dependence of the fluorescence emission intensity in nanosecond resolution of TR imaging is also revealed. 相似文献
103.
104.
105.
This paper uses the method of linear approximation for impulsive systems and gets a theorem which guarantees a fishery modei to be asymptotically stable at its equilibrium point and gives the ecological explanation. 相似文献
106.
107.
A new constant-pressure molecular dynamics (MD) method is developed to simulate the dynamic behavior and structure transition of finite system under external pressure. In this method, no artificial parameter is introduced and the computation overheads are very small. As an application, a hard-soft transition of single wall carbon nanotube (SWCNT) under external pressure is found, which is in agreement with the experiments.
相似文献108.
109.
多目标半定规划的互补弱鞍点和G-鞍点最优性条件 总被引:1,自引:0,他引:1
对于含矩阵函数半定约束和多个目标函数的多目标半定规划问题,给出Lagrange函数在弱有效意义下的互补弱鞍点和Geofrrion恰当有效意义下的G-鞍点的定义及其等价定义.然后,在较弱的凸性条件下,利用含矩阵和向量约束的择一性定理,建立多目标半定规划的互补弱鞍点和G-鞍点充分必要条件. 相似文献
110.
Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (VInH4)+ to (VInH4)0. This phenomenon was more obvious in P-rich samples that have a higher concentration of VInH4. The transformation temperature of approximately 120 K suggests that the complex VInH4 is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral VInH4 accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP. 相似文献