995.
We have investigated the growth of magnesium-doped GaP (GaP:Mg) layers on GaN by metalorganic chemical vapor deposition. The hole carrier concentration increased linearly from 0.8×10
18 to 4.2×10
18 cm
−3 as the Bis(cyclopentadienyl) magnesium (Cp
2Mg) mole flow rate increased from 1.2×10
−7 to 3.6×10
−7 mol/min. However, the hole carrier concentration decreased when the CP
2Mg mole flow rate was further increased. The double crystal X-ray diffraction (DCXRD) rocking curves showed that the GaP:Mg layers were single crystalline at low CP
2Mg molar flow. However, the GaP:Mg layers became polycrystalline if the CP
2Mg molar flow was too high. The decrease in hole carrier concentration at high CP
2Mg molar flow was due to crystal quality deterioration of the GaP layer, which also resulted in the low hole mobility of the GaP:Mg layer.
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