Effect of grinding on the low temperature photoluminescence of certain inorganic crystals

The broadening as well as shift in the photoluminescence spectra of K₂[Pt(CN)₄] · 3 H₂O, Ba[Pt(CN)₄] · 4 H₂O, CdS:Te and Ru(C₁₅H₁₁N₃)₂I₂ · H₂O crystals take place with their grinding. The original vibronic peaks at 632 and 628 nm of CdS:Te and Ru(C₁₅H₁₁N₃)₂I₂ · H₂O crystals, respectively, disappear with the grinding. A new vibronic peak at 650 nm appears with grinding of Ru(C₁₅H₁₁N₃)₂I₂ · H₂O crystals. It is concluded that the change in the photoluminescence spectra is attributed to the creation of dislocations during the process of grinding.     

An estimation of fracture stress in a brittle solid

The present paper reports for the first time an exact analytic expression that can be used for obtaining fracture stress σ_F, when fracture occurs in the elastic limit and also when fracture occurs after general yield (σ_F > σ_Y) in a brittle solid. The present paper may provide a new basis to fracture-safe design of brittle materials.     

Dielectric and electrical studies on as-grown CeO2 films

Thin film capacitors of CeO₂ were fabricated by thermal evaporation. The dielectric properties of these films were studied in the frequency range 0.05–16 KHz at various temperatures, starting from liquid nitrogen temperature to 390 K. The effect of annealing on capacitance and tan δ were studied for different frequencies. The behaviour was explained on the basis of relief in strain energy. The plot between current density and temperature was drawn, and from the slope of the plot the activation energy was calculated and found to be 0.52 ev. The results were discussed.     

Electrical properties of Al-CeO2-Al thin film capacitor structures

Cerium Oxide films were prepared by vacuum thermal evaporation from tantalum boat in a conventional vacuum coating unit. Current-voltage characteristics were studied for different film thicknesses. The breakdown voltage (V_B) and dielectric field strength (E_B) were calculated. It is found that the breakdown voltage increases and dielectric field strength decreases as the thickness of the film increases. The applicability of Forlani-Minnaja relation is discussed. Current-voltage characteristics were also drawn at different temperatures and breakdown voltages were calculated. The breakdown voltage decreases as the temperature of the structure increases but the variation is nonlinear. The variation of current density with temperature was studied and the activation energy for the migration of charge carriers was calculated and it is about 0.52 ev. The results were discussed.     

Hydrogenation of Pd-capped Mg thin films prepared by DC magnetron sputtering

Structural and optical properties of pure Mg thin film coated with Pd have been investigated. Pd-capped Mg thin films had been prepared by DC magnetron sputtering. This work presents an ex situ study on hydrogenation and dehydrogenation kinetics of Pd/Mg films at different conditions using XRD, AFM and optical spectrophotometer. We have succeeded to load thin films of Mg to MgH₂ at normal temperature and normal pressure of hydrogen gas. In hydrogenation, α-MgH₂ phase of magnesium hydride was observed in hydrogenated films at 200 °C and γ-MgH₂ at 250 °C respectively. The desorption kinetics in vacuum also revealed the phase transformation α-MgH₂ to γ-MgH₂. A reflectance change was observed in hydrogenated films in comparison of as deposited thin film. Hydrogenated (H loaded) samples were observed partially transparent in comparison of as deposited.