Microemulsion-mediated in-situ synthesis and magnetic characterization of polyaniline/Zn<Subscript>0.5</Subscript>Cu<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanocomposite

Polyaniline/Zn_0.5Cu_0.5Fe₂O₄ nanocomposite was synthesized by a simple, general and inexpensive in-situ polymerization method in w/o microemulsion. The effects of polyaniline coating on the magnetic properties of Zn_0.5Cu_0.5Fe₂O₄ nanoparticles were investigated. The structural, morphological and magnetic properties of as-prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectra, scanning electron microscopy (SEM) and magnetic measurements. The morphology analysis confirmed that polyaniline was deposited on the porous surface of magnetic Zn_0.5Cu_0.5Fe₂O₄. It was shown that the saturation magnetization and coercivity of Zn_0.5Cu_0.5Fe₂O₄ decreased after polyaniline coating, which can be interpreted by the interparticle dipole–dipole interactions that contributed to magnetic anisotropy and changed the magnetic properties of the nanoparticles. PACS  74.25.Ha; 81.05.-t; 81.05.Lg     

Determinant Bounds and the Matsubara UV Problem of Many-Fermion Systems

It is known that perturbation theory converges in fermionic field theory at weak coupling if the interaction and the covariance are summable and if certain determinants arising in the expansion can be bounded efficiently, e.g. if the covariance admits a Gram representation with a finite Gram constant. The covariances of the standard many–fermion systems do not fall into this class due to the slow decay of the covariance at large Matsubara frequency, giving rise to a UV problem in the integration over degrees of freedom with Matsubara frequencies larger than some Ω (usually the first step in a multiscale analysis). We show that these covariances do not have Gram representations on any separable Hilbert space. We then prove a general bound for determinants associated to chronological products which is stronger than the usual Gram bound and which applies to the many–fermion case. This allows us to prove convergence of the first integration step in a rather easy way, for a short–range interaction which can be arbitrarily strong, provided Ω is chosen large enough. Moreover, we give – for the first time – nonperturbative bounds on all scales for the case of scale decompositions of the propagator which do not impose cutoffs on the Matsubara frequency.     

Aryltriazene photopolymer thin films as sacrificial release layers for laser-assisted forward transfer systems: study of photoablative decomposition and transfer behavior

Thin films of a tailor-made photodecomposible aryltriazene polymer were applied in a modified laser-induced forward transfer (LIFT) process as sacrificial release layers. The photopolymer film acts as an intermediate energy-absorbing dynamic release layer (DRL) that decomposes efficiently into small volatile fragments upon UV laser irradiation. A fast-expanding pressure jet is generated which is used to propel an overlying transfer material from the source target onto a receiver. This DRL-assisted laser direct-write process allows the precise deposition of intact material pixels with micrometer resolution and by single laser pulses. Triazene-based photopolymer DRL donor systems were studied to derive optimum conditions for film thickness and laser fluences necessary for a defined transfer process at the emission wavelength of a XeCl excimer laser (308 nm). Photoablation, surface detachment, delamination and transfer behavior of aryltriazene polymer films with a thickness from 25 nm to ∼400 nm were investigated in order to improve the process control parameters for the fabrication of functional thin-film devices of microdeposited heat- and UV-sensitive materials.     

Charge density of Ga<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sb

Charge density calculations and electronic band structures for Ga _x Al_{1 − x} Sb with x = 1.0, 0.5 and 0.0 are presented in this work. The calculations are performed using the empirical pseudopotential method. The charge density is computed for a number of planes, i.e. z = 0.0, 0.125 and 0.25 A ₀ by generating the potential through a number of potential parameters available in the literature. The virtual crystal approximation was applied for the semiconducting alloy. The characteristics of the band structure and charge density are observed to be affected by the potential parameters. Calculated band gaps and the nature of gaps are in good agreement with the experimental data reported. The ionicity is also reasonably in good agreement with other scales proposed in the literature; however the formulation needs to be improved. The present work also demands indirect experimental band gap for the alloy.      

A Curvature Principle for the interaction between universes

We propose a Curvature Principle to describe the dynamics of interacting universes in a multi-universe scenario and show, in the context of a simplified model, how interaction drives the cosmological constant of one of the universes toward a vanishingly small value. We also conjecture on how the proposed Curvature Principle suggests a solution for the entropy paradox of a universe where the cosmological constant vanishes. Essay selected for an honorable mention by the Gravity Research Foundation, 2007.     

Inequivalent quantizations of the rational Calogero model with a Coulomb type interaction

We consider the inequivalent quantizations of a N-body rational Calogero model with a Coulomb type interaction. It is shown that for a certain range of the coupling constants, this system admits a one-parameter family of self-adjoint extensions. We analyze both the bound and scattering state sectors and find novel solutions of this model. We also find the ladder operators for this system, with which the previously found solutions can be constructed.     

New approach to solution of photorefractive transport equations

In our work we propose a novel method of analysis of photorefractive transport equations. The method based on a perturbative approach can be used in the case of two wave mixing and four wave mixing geometry, i.e. for the samples illuminated by interference patterns. Presented approach can be employed for a broad range of material and experimental parameters, particularly for arbitrary depth of light modulation pattern. The approximate analytical solution is compared with results of numerical calculations and a good agreement practically in every case was found. Presented at 9-th International Workshop on Nonlinear Optics Applications, NOA 2007, May 17–20, 2007, Šwinoujście, Poland     

Interfaces in perovskite heterostructures

Recent advances in film synthesis have made it possible to investigate the properties of well-controlled interfaces in perovskite metal-oxides. A review of published experimental data and computational results indicate that so far most interfaces that have been analyzed in ferroelectric materials—while necessary to impose large lattice strain on the polar material—contribute little to the ferroelectricity and may instead be detrimental to the desired properties. In contrast, a very different situation arises at interfaces that show changes in the electronic configuration as a consequence of a compositional discontinuity. Data is shown for LaMnO₃/SrTiO₃ superlattices as an example of electronic effects that produce enhanced properties, further illustrating the richness of interfacial properties that can be obtained at interfaces (as shown in numerous published results for different but related interfaces).     

First-principles studies of the electronic structure and optical properties of AgBO<Subscript>3</Subscript> (B=Nb,Ta) in the paraelectric phase

The electronic energy-band structure, density of states (DOS), and optical properties of AgBO₃ in the paraelectric cubic phase have been studied by using density functional theory within the local density approximation for exchange-correlation for the first time. The band structure shows a band gap of 1.533 eV (AgNbO₃)and 1.537 eV (AgTaO₃)at (M-⌈)point in the Brillouin zone. The optical spectra of AgBO₃ in the photon energy range up to 30 eV are investigated under the scissor approximation. The real and imaginary parts of the dielectric function and — thus the optical constants such as reflectivity, absorption coefficient, electron energy-loss function, refractive index, and extinction coefficient — are calculated. We have also made some comparisons with related experimental and theoretical data that is available.      

Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition

We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were investigated and the post-annealed ZnO films grown at T _g =700^oC have very smooth surfaces and the rms with roughness is about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epilayer and GaN/sapphire substrates. It is confirmed by AFM that growth temperature of 700^oC helps the films grow in step-flow growth mode. It is observed by cathode luminescence spectrum that the ZnO film grown at 700^oC has very low visible luminescence, indicating the decrease of the deep level defects. It is also revealed by Hall measurements that carrier concentration is decreased by increasing the growth temperatures. It is suggested that low temperature buffer layer growth and post-annealing technique can be used to fabricate ZnO hetero-epitaxy.