Morphological and electronic properties of the thin film phase of pentacene investigated by AFM and STM/STS

We investigated the morphological, structural and electronic properties of Pentacene thin films grown by vacuum thermal evaporation on different inert substrates at room temperature. The results of our AFM and STM analysis give an interplanar spacing of 1.54 nm corresponding to the (0 0 1) distance of the so-called “thin film phase”. The STS measurements show an HOMO-LUMO gap of 2.2 eV.     

Uncertainties in air showers from small-x pQCD mini-jets

To investigate uncertainties in air shower simulations caused by the small-x regime, a model including leading-twist hard pQCD plus soft processes was built, which are separated by an energy dependent transverse momentum cut-off. We provide a fit of the cut-off to the total pp cross section for different PDFs using the eikonal formalism and show that for modern PDF sets there is only a small uncertainty in the mini-jet cross section, and hence in the finalstate multiplicity and the number of produced muons.     

An improved approach for hydrogen analysis in metal samples using single laser-induced gas plasma and target plasma at helium atmospheric pressure

We report in this paper the results of an experimental study on hydrogen analysis of solid samples in high pressure helium ambient gas employing the basic scheme of laser induced breakdown spectroscopy (LIBS). It is shown that the metastable excited state of helium atom can be utilized to induce delayed excitation of the ablated hydrogen atoms, and thereby avoid the Stark broadening effect as well as overcoming the undesirable mismatch effect, which are responsible for inefficient excitation respectively. It is further demonstrated that for samples of high boiling-point materials such as zircaloy, successful hydrogen analysis can be achieved by a newly introduced double excitation technique employing single laser realized in a modified configuration of the conventional LIBS method. PACS 51-52     

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

稀有衰变B0(Bs)→γv(-v)分支比的计算

在标准模型中,三体稀有衰变B0(Bs)→γv(-v)只有通过箱图和企鹅图才可以发生.这个过程对于确定B介子的衰变常数及其波函数有着较重要的物理意义,由于这些衰变道的分支比较小,因此也是探测新物理理论的比较好的场所.利用B介子强衰变确定的波函数,得到B0(Bs)→γv(-v)的分支比的数量级是10-9(10-8),这些结果可以在未来的实验上得到检验.     

Measurements of theg-factor ratio of the first 3− and 5− states in40Ca and the lifetime of the 5− state

[Theg-factor ratio of the first excited 3^? and 5^? states in⁴⁰Ca was measured to beg ₃/g ₅=1.01(10) employing the implantation perturbed angular correlation technique. The static hyperfine fields (SF) in Fe and Gd hosts were used. In addition the lifetime of the 5^? state was measured to be τ=426(7)ps. The values of the SF in Gd and Fe hosts were deduced and compared with systematics in this element region.     

New methods for determining the volumetric flow rate in the column and the retention time of the unretained substance in gas chromatography

New methods for calculating the mean volumetric flow rate of the carrier gas and the retention time of the unretained substance in the column under conditions of gas chromatography were proposed. The methods are based on preliminary isothermal calibrations of the flow rate and holdup time for a packed column. A theoretical substantiation of the methods was given. Procedures of plotting calibration dependences for determining the indicated quantities at a desired temperature were described. The calculation results were compared to experimental data obtained by traditional methods. It was demonstrated that the use of calculation methods substantially simplifies the determination of the specific retention volume over a wide temperature range.