首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   331482篇
  免费   3541篇
  国内免费   951篇
化学   166285篇
晶体学   5380篇
力学   15552篇
综合类   7篇
数学   38808篇
物理学   109942篇
  2021年   3162篇
  2020年   3386篇
  2019年   3829篇
  2018年   5231篇
  2017年   5466篇
  2016年   7436篇
  2015年   4192篇
  2014年   7096篇
  2013年   16000篇
  2012年   12501篇
  2011年   14954篇
  2010年   11075篇
  2009年   10988篇
  2008年   13364篇
  2007年   13329篇
  2006年   12264篇
  2005年   10647篇
  2004年   9936篇
  2003年   8773篇
  2002年   8762篇
  2001年   10430篇
  2000年   7682篇
  1999年   5998篇
  1998年   4992篇
  1997年   4841篇
  1996年   4505篇
  1995年   3886篇
  1994年   3845篇
  1993年   3722篇
  1992年   4102篇
  1991年   4326篇
  1990年   4103篇
  1989年   4019篇
  1988年   3787篇
  1987年   3918篇
  1986年   3686篇
  1985年   4636篇
  1984年   4684篇
  1983年   3892篇
  1982年   3976篇
  1981年   3706篇
  1980年   3652篇
  1979年   3913篇
  1978年   3907篇
  1977年   3911篇
  1976年   3883篇
  1975年   3675篇
  1974年   3619篇
  1973年   3651篇
  1972年   2603篇
排序方式: 共有10000条查询结果,搜索用时 8 毫秒
151.
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes.  相似文献   
152.
153.

Harmonic mappings from the Sierpinski gasket to the circle are described explicitly in terms of boundary values and topological data. In particular, all such mappings minimize energy within a given homotopy class. Explicit formulas are also given for the energy of the mapping and its normal derivatives at boundary points.

  相似文献   

154.
The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.  相似文献   
155.
A stability theorem is proved for mappings with bounded distortion over John domains in the Heisenberg group furnished with the Carnot–Caratheodory metric.  相似文献   
156.
We investigate the linear stability of the Bickley jet in the framework of the beta-plane approximation. Because singular inviscid neutral modes exist in the retrograde case     , it is necessary to add viscosity to interpret them. One of these modes was found in closed form by Howard and Drazin [1] . However, its critical point is at the center of the jet and it was therefore not possible for these authors to ascertain the relationship of this mode to the stability problem or to discuss how to continue the eigenfunction across the singularity.
The viscous critical layer problem associated with this singularity is considerably more difficult than the usual one (which leads to integrals of the Airy function) because     and, consequently, a second-order turning point is involved. Our analysis shows that the Howard–Drazin mode is degenerate in the domain where it is valid as a limit of the viscous problem (wavenumber  α2≤ 9/2  ), that is, it corresponds to both an odd and an even mode. This conclusion is confirmed by direct numerical solution of the Orr–Sommerfeld equation which shows, in addition, that viscosity is destabilizing along portions of the stability boundary. For a retrograde jet, instability is found to occur beyond the inviscid critical value of β, that is, in the region where the flow would be stable according to the Rayleigh–Kuo condition.  相似文献   
157.
In this paper we develop a theory of unique factorization for subgroups of the positive rationals. We show that this theory is strong enough to include arithmetic progressions and the theory of genera in algebraic number fields. We establish generalizations of both Dirichlet's theorem on primes in arithmetic progressions and the theory of genera for Abelian extensions of the rationals.  相似文献   
158.
159.
The spin splitting caused by the terms linear in wavevector in the effective Hamiltonian containing can give rise to the new magneto-oscillation phenomena in two-dimensional systems. It is shown that the joint action of the spin-dependent contributions due to the heterostructure asymmetry and to the lack of inversion center in the bulk material suppresses beats that arise in the magneto-oscillation phenomena in the presence of the terms of only one of these types.  相似文献   
160.
 The development of a tool for calculating resonances and bound states in three-body systems described by a single-potential energy surface is reported. The method has been applied to the antiprotonic helium, doubly excited states in helium, the 11Li nuclear halo, the NeICl van der Waals molecule, and the recently found FHD reaction complex. Received November 26, 2001; accepted for publication November 28, 2001  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号