Radiochemical proton activation analysis for the determination of cadmium and lead in sediment reference materials

Proton activation analysis was used for the determination of cadmium and lead in three sediment reference materials. The method is based on the^111,112Cd(p, xn)¹¹¹ In and the^206,207,208Pb(p, xn)²⁰⁶Bi reactions.¹¹¹In and²⁰⁶Bi were chemically separated by anion exchange. The results obtained were taken into account for the certification of the materials and are in the excellent agreement with the certified values.     

Förster energy transfer from poly(arylene–ethynylene)s to an erbium–porphyrin complex

We study the infrared emission at 1.54 μm of an organolanthanide complex, Er(III)-tetraphenylporphyrin [Er(TPP)acac], both as a result of direct optical excitation and via energy transfer from host π-conjugate polymers of type poly(arylene–ethynylene) [PAE]. In the first case, the emission of the neat complex is characterized in inert transparent materials and a value of the quantum yield at 1.54 μm φ_IR=4×10⁻⁴ is measured. Then, fluorescence resonance transfer is investigated in blends of Er(TPP)acac with PAEs by monitoring the quenching of the polymer fluorescence along with the enhancement of both the visible emission of the ligand and the near-infrared band of Er³⁺. These different procedures allow a detailed analysis of the transfer efficiency within a specific implementation of the Förster model for polymeric donors. The experimental values of the critical radius R₀, ranging from 1.3 to 2.5 nm for the different blends, are in good agreement with theory for a wide interval of the physical and spectroscopic parameters. This suggests that other mechanisms for excitation transfer do not play a significant role in these materials.     

Über die ξ-Funktion einfacher hyperkomplexer Systeme

Ohne Zusammenfassung     

Additive-subtractive phase-modulated speckle interferometry: Fringe visibility under partial decorrelation

Additive-subtractive phase modulated speckle interferometry (ASPMSI) is a technique that minimizes the susceptibility of speckle methods to environmental noise while providing fringes of good visibility. The method requires the acquisition of two consecutive video frames of additive-speckle images of the same two deformed states of an object at a rapid enough rate such that ambient noise is not a problem. The additive-speckle images as expected are of very poor visibility due to the presence of the self-interference term. An interframe phase-modulation is introduced and the two additive-speckle images are digitally subtracted to improve the fringe visibility by removing the self-interference term. The ASPM-SI method works with in-plane and out-of-plane deformation sensitive ESPI as well as with displacement-gradient sensitive speckle-shearing interferometry. It is shown that the ASPM-SI scheme has higher visibility than conventional additive-SI and performs consistently better than subtractive-SI schemes in the presence of partial interframe speckle decorrelating optical noise. Furthermore, it is shown that the fringe visibility of the out-of-plane displacement sensitive interferometer which uses a protected reference beam separate from the object beam can be made to be essentially unity even at complete interframe decorrelation.     

Visualization of industrial engineering data in Augmented Reality

This paper presents an innovative application of Augmented Reality (AR) techniques in the field of industrial engineering in which the user explores data from numerical simulations or the results of measurements and experiments, superimposed to the real object that they refer to. The user observes the object through a tablet PC, used as a video see-through handheld display. Data are visualized superimposed to the real object that represents a spatial reference relative to which the user can refer to, so the exploration is more natural compared to a traditional visualization software. Moreover, we have developed a new framework, called VTK4AR, that provides a set of useful software classes for the rapid development of AR applications for scientific visualization. VTK4AR is built on top of VTK (an open source API for scientific visualization), so it will be possible to employ a wide range of visualization techniques in many application fields, and moreover, it is possible to interactively manipulate data-sets in order to achieve a more effective way of visualization.     

A $\Gamma$-convergence result for doubling metric measures and associated perimeters

Abstract. In this paper we study the notion of perimeter associated with doubling metric measures or strongly weights. We prove that the metric perimeter in the sense of L. Ambrosio and M. Miranda jr. coincides with the metric Minkowski content and can be obtained also as a -limit of Modica-Mortola type degenerate integral functionals. Received: 27 August 2001 / Accepted: 29 November 2001 / Published online: 10 June 2002 Investigation supported by University of Bologna, funds for selected research topics and by GNAMPA of INdAM, Italy. The authors are very grateful to Luigi Ambrosio and Francesco Serra Cassano for making their preprints available to them, for listening with patience and for many unvaluable suggestions.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.