Optimal control of the N policy M/G/1 queueing system with server breakdowns and general startup times

This paper deals with an N policy M/G/1 queueing system with a single removable and unreliable server whose arrivals form a Poisson process. Service times, repair times, and startup times are assumed to be generally distributed. When the queue length reaches N(N ? 1), the server is immediately turned on but is temporarily unavailable to serve the waiting customers. The server needs a startup time before providing service until there are no customers in the system. We analyze various system performance measures and investigate some designated known expected cost function per unit time to determine the optimal threshold N at a minimum cost. Sensitivity analysis is also studied.     

Spectral flow and Dixmier traces

We obtain general theorems which enable the calculation of the Dixmier trace in terms of the asymptotics of the zeta function and of the heat operator in a general semi-finite von Neumann algebra. Our results have several applications. We deduce a formula for the Chern character of an odd -summable Breuer-Fredholm module in terms of a Hochschild 1-cycle. We explain how to derive a Wodzicki residue for pseudo-differential operators along the orbits of an ergodic action on a compact space X. Finally, we give a short proof of an index theorem of Lesch for generalised Toeplitz operators.     

Comparison between experiment and computer modeling for simple MILOconfigurations

The MILO is a crossed-field HPM, high power microwave source which uses its self-generated magnetic field to cut off electron flow to the anode. A detailed comparison of experimental results and a computer simulation has been made for a number of simple axisymmetric MILO structures designed to operate at 1 GHz. The structures were built from demountable components which enabled the number of cavities and their dimensions to be rapidly altered. Measurements were made of the fluctuating magnetic fields at the end of each cavity. The amplitude and depth of RF modulation of the magnetic fields, although repeatable, changed drastically from one configuration to the next; these parameters were compared with predictions from VIPER, a 2-D electromagnetic PIC code. Good quantitative agreement was obtained between experiments and the simulation in most situations, although, late in the current pulse, after about 100 ns, the level of RF began to decay; a phenomenon which became more pronounced as the applied voltage was increased. The decay was attributed to plasma formation on the cavity vanes and subsequent electron emission; this explanation was verified by computer modeling electron emission and by using vanes make from polished stainless steel in place of aluminum vanes     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA