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931.
High power industrial multibeam CO2 lasers consist of a large number of closely packed parallel glass discharge tubes sharing a common plane parallel resonator. Every discharge tube forms an independent resonator. When discharge tubes of smaller diameter are used and the Fresnel numberN ≪ 1 for all resonators, they operate in waveguide mode. Waveguide modes have excellent discrimination of higher order modes. A DC excited waveguide multibeam CO2 laser is reported having six glass discharge tubes. Simultaneous excitation of DC discharge in all sections is achieved by producing pre-ionization using an auxiliary high frequency pulsed discharge along with its other advantages. Maximum 170 W output power is obtained with all beams operating in EH11 waveguide mode. The specific power of 28 W/m is much higher as compared to similar AC excited waveguide multibeam CO2 lasers. Theoretical analysis shows that all resonators of this laser will support only EH11 mode. This laser is successfully used for woodcutting  相似文献   
932.
Titanium carbide formation by the solid–solid reaction on the surface of Ti nanoparticles was studied in situ using a high-resolution transmission electron microscope with a heating stage. The cross-sectional image of the Ti surface was clearly observed. Vacuum-deposited carbon covered the whole the surface of Ti nanoparticles in spite of the partly evaporation on the nanoparticle surface. The diffusion of the carbon atoms inside the Ti nanoparticles depended on the size of the nanoparticles. When the Ti nanoparticle diameter was less than 30 nm, carbon atoms diffused into the Ti nanoparticle and formed TiC. The superstructure of the Ti nanoparticles was observed, which revealed the growth process of TiC to be the diffusion of carbon atoms. For Ti nanoparticles with diameter larger than 30 nm it was observed that diffusion of Ti atoms into the carbon layer was dominant, which resulted in formation of TiC in the carbon layer at the surface of Ti nanoparticles.  相似文献   
933.
 If a and b are trace-class operators, and if u is a partial isometry, then , where ∥⋅∥1 denotes the norm in the trace class. The present paper characterises the cases of equality in this Young inequality, and the characterisation is examined in the context of both the operator and the Hilbert–Schmidt forms of Young's inequality. Received: 20 December 2001 / Revised version: 11 July 2002 / Published online: 10 February 2003 Mathematics Subject Classification (2000): 47A63, 15A60  相似文献   
934.
The composition and size of optically active CdxZn1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for CdxZn1−xSe/Zn0.97Be0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots.  相似文献   
935.
Let G = (V,E) be a graph or digraph and r : VZ+. An r‐detachment of G is a graph H obtained by ‘splitting’ each vertex ν ∈ V into r(ν) vertices. The vertices ν1,…,νr(ν) obtained by splitting ν are called the pieces of ν in H. Every edge uν ∈ E corresponds to an edge of H connecting some piece of u to some piece of ν. Crispin Nash‐Williams 9 gave necessary and sufficient conditions for a graph to have a k‐edge‐connected r‐detachment. He also solved the version where the degrees of all the pieces are specified. In this paper, we solve the same problems for directed graphs. We also give a simple and self‐contained new proof for the undirected result. © 2003 Wiley Periodicals, Inc. J Graph Theory 43: 67–77, 2003  相似文献   
936.
We investigate the ground state energy of an electron coupled to a photon field. First, we regard the self-energy of a “free” electron, which we describe by the Pauli-Fierz Hamiltonian. We show that, in the case of small values of the coupling constant a \alpha , the leading order term is represented by 2ap-1(L - ln[1 + L]) 2\alpha\pi^{-1}(\Lambda - \textrm{ln}[1 + \Lambda]) .¶ Next we put the electron in the field of an arbitrary external potential V , such that the corresponding Schrödinger operator p2 + V has at least one eigenvalue, and show that by coupling to the radiation field the binding energy increases, at least for small enough values of the coupling constant a \alpha . Moreover, we provide concrete numbers for a \alpha , the ultraviolet cut-off, and the radiative correction for which our procedure works.  相似文献   
937.
CdS clusters were synthesized in A type zeolite by reaction in alkaline aqueous solution at temperatures from 30 to 70 °C. The optical properties of the samples were studied by diffuse reflectance and photoluminescence spectroscopy. Their crystalline structure and morphology were studied by X-ray diffraction and by transmission and scanning electron microscopy. We found that at lower temperatures the CdS clusters are encapsulated in the zeolite cages. We compared the properties of these clusters with those encapsulated in the cages of zeolites X and Y, prepared by similar methods. CdS clusters smaller than the CdS exciton diameter are also formed outside the cages in the zeolite matrix. The size of these clusters increases with temperature producing a red-shift of the absorption edge in the optical absorption spectra.  相似文献   
938.
P. Vn 《Annalen der Physik》2003,12(3):146-173
Weakly nonlocal thermodynamic theories are critically revisited. A relocalized, irreversible thermodynamic theory of nonlocal phenomena is given, based on a modified form of the entropy current and new kind of internal variables, the so called current multipliers. The treatment is restricted to deal with nonlocality connected to dynamic thermodynamic variables. Several classical equations are derived, including Guyer‐Krumhansl, Ginzburg‐Landau and Cahn‐Hilliard type equations.  相似文献   
939.
A polarization-insensitive 40-Gb/s time-division demultiplexer was demonstrated in a polarization-diversity loop configuration. The power penalty was measured to be 2.3 dB at a bit error rates of 10-9 for 10 Gb/s output signals.  相似文献   
940.
We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In0.10Ga0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.  相似文献   
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