激光与近相对论临界密度薄层相互作用产生大电量高能电子束

研究了激光与近相对论临界密度等离子体薄层相互作用时所产生的高能电子束的主要特征,包括平均有效温度以及截止能量等.实验结果表明,电子束的电量超过nC量级,平均有效温度可达8 MeV以上.PIC数值模拟证明,近相对论临界密度等离子体内,相对论自透明效应和激光钻孔效应共同形成一条磁化等离子体通道,电子与激光将在角向磁场的协助下发生Betatron共振.激光可将电子直接加速到很高能量,因此电子束平均有效温度("斜坡温度")远远超过Wilks定标率预计的平均温度.该研究为产生高亮度X射线源提供了一种新的可能途径.     

基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究

通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs).     

Near Continuum Velocity and Temperature Coupled Compressible Boundary Layer Flow over a Flat Plate

The problem of a compressible gas flows over a flat plate with the velocity-slip and temperature-jump boundary conditions are being studied. The standard single- shooting method is applied to obtain the exact solutions for velocity and temperature profiles when the momentum and energy equations are weakly coupled. A double-shooting method is applied if these two equations are closely coupled. If the temperature affects the velocity directly, more significant velocity slip happens at locations closer to the plate’s leading edge, and inflections on the velocity profiles appear, indicating flows may become unstable. As a consequence, the temperature-jump and velocity-slip boundary conditions may trigger earlier flow transitions from a laminar to a turbulent flow state.     

Electronic structures of Fe in La1−x Ba x FeO3−y (0≤x≤0.70)

Mössbauer spectra of La_1–x Ba _x FeO_3–y recorded at room temperature for various values of x show a six-line and/or a single-line subspectrum. The six-line subspectrum with IS=0.41 mm/s and H=52 T results from an orthorhombic perovskite containing only Fe³⁺ ions. The single-line subspectrum at 0.17 mm/s from a cubic perovskite can be assigned to neither Fe³⁺ nor Fe⁴⁺ but to an intermediate valence state, which may be due to electron hopping between the Fe³⁺ and Fe⁴⁺ ions on the identical octahedral sites. The temperature dependence of electron hopping in the compound La_0.40Ba_0.60FeO_3–y is presented.     

Matrix representation of three-dimensional astigmatic resonators

Three-dimensional astigmatic resonators, typical examples of which are the resonators bounded by cylindrical-spherical mirrors and cylindrical-cylindrical mirrors oriented at an arbitrary crossed angle, are investigated in detail by using a complex curvature tensor concept and generalized tensor ABCD law. Computerized numerical calculations illustrate some interesting characteristics of these astigmatic resonators.     

线状锗等离子体X射线线谱的时间分辨测量

用自行研制的X射线条纹晶体谱仪首次测量了线状锗等离子体的X射线时间分辨谱。给出了类Ne-锗L线共振线的时间演化过程,并用类Ne-锗L线共振线与其双电子俘获伴线的相对强度比粗估了锗等离子体的电子温度及其随时间的变化,实验给出了X光激光增益区介质的电子温度为400～760eV,同时给出了电子温度保持相对恒定的时间不小于90ps(电子温度变化小于2％)。     

0.14 THz高分辨力成像雷达信号处理

为适应0.14 THz超高分辨雷达实时成像的需求,开发了基于CPU+GPU+FPGA的硬件架构和成像处理算法,算法以距离-多普勒为原型,引入L类维格纳分布变换提高横向分辨力,用Keystone变换方法对越距离单元徙动进行校正,并开发了系统非线性补偿算法。在载频0.14 THz、带宽5 GHz雷达样机上进行了逆合成孔径雷达成像试验,获得了3 cm3 cm的成像分辨力和实时成像能力,验证了信号处理方法的有效性。     

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.     

送粉角度对激光熔覆铁基复合涂层形状特征的影响

通过分析激光熔覆过程中光束、粉末和熔池间的作用机理,建立了送粉式激光熔覆材料有效利用率的数学模型,在此基础上推导了送粉角度与工艺参数之间的定量关系式,并计算了不同送粉角度下的熔覆材料有效利用率、熔高和横截面积。结果表明,在熔覆工艺参数不变的条件下,理论计算的熔覆材料有效利用率、熔覆层高度和横截面积均随送粉角度的增加而增大,且均高于实验检测值。激光熔覆过程中,由于粉末烧损和机械损失,使熔覆材料有效利用率、熔高和横截面积随送粉角度变化出现最大值,理想送粉角度为60。     

1000V可调脉动直流电源设计

本文将自耦调压器与升压变压器相结合，设计出了一种1000V可调脉动直流电源，构思独特，可广泛应用于可调高压大功率电源的设计。