A mathematical model of the response of the semicircular canal and otolith to vestibular system rotation under gravity

A mathematical model of the system composed of two sensors, the semicircular canal and the sacculus, is suggested. The model is described by three lines of blocks, each line of which has the following structure: a biomechanical block, a mechanoelectrical transduction mechanism, and a block describing the hair cell ionic currents and membrane potential dynamics. The response of this system to various stimuli (head rotation under gravity and falling) is investigated. Identification of the model parameters was done with the experimental data obtained for the axolotl (Ambystoma tigrinum) at the Institute of Physiology, Autonomous University of Puebla, Mexico. Comparative analysis of the semicircular canal and sacculus membrane potentials is presented. __________ Translated from Fundamentalnaya i Prikladnaya Matematika, Vol. 11, No. 7, pp. 207–220, 2005.     

Testing exponentiality against a class of alternatives which includes the RNBUE distributions based on the empirical laplace transform

A scale-free test for exponentiality is proposed which is consistent within an extended set of models, including, but not limited to, the “renewal new better than used in expectation” (RNBUE) class of life distributions. The limiting null distribution of the test statistics is derived, and the approximate local Bahadur efficiency is calculated for several families of alternatives. Finite-sample properties of the proposed procedures are investigated via simulation. Bibliography: 24 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 339, 2006, pp. 63–77.     

Eligibility of spherical-well approximation for calculations of nucleon-transfer matrix elements

Single-particle matrix elements of nucleon transfer were calculated by the Woods-Saxon potential wave functions. The results are compared with the ones calculated by the spherical-well approximation. The eligibility of the approximation of the mean field of nuclei by the spherical well to study the initial stage of nuclear reactions at heavy-ion collisions is demonstrated. The text was submitted by the authors in English.     

On the dynamical Casimir effect in a one-dimensional contracting cavity

The dynamical Casimir effect is analyzed in the framework of the S-matrix formulation for a one-dimensional cavity that exhibits contraction at a constant rate over a finite time interval. The exact solution to the problem is presented. It is demonstrated that the efficiency of the creation of pairs nonmonotonically depends on the contraction time. This is due to the fact that the particles are only created at the moments corresponding to the acceleration and stopping of the moving boundary, so that the contributions of these processes on the number of the created particles interfere with each other. The parameters that correspond to the optimal creation of pairs and the stability of a vacuum are presented. The effect of the finiteness of the cavity-boundary acceleration on the results obtained is studied.     

On the effect of magnetic fields on alloys with isothermal kinetics of martensitic transformation

The effect of magnetic treatment on the isothermal martensitic transformation in the Fe-24% Ni-4% Mn alloy has been investigated. The martensitic transformation in a dc magnetic field at liquid-helium temperature has been analyzed.     

Theory of the phenomenological charge of dislocations generated by a phase transition

For the case of a phase transition into a macroscopically inhomogeneous state described by the order parameter (OP) that is characterized by a multiarm star of a vector {k_i}, a method for compensating the spatial variation in all star arms k_i is proposed. To this end, a unified tensor field (OP connectivity) is considered, which is interpreted as a stress field potential. The OP-connectivity interaction is described by the phenomenological dislocation charge. Alternative ways of physical interpretation of the OP connectivity are discussed.     

Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.     

Distortions of the magnetic structure of a thin antiferromagnetic layer in magnetic field

Distortions induced by an external magnetic field in the magnetic structure of a thin layer of a uniaxial collinear antiferromagnet with rough surfaces are studied using computer simulation. It is shown that, under certain conditions, the presence of atomic steps at the layer surfaces causes the antiferromagnetic layer to break up into domains. The character and magnitude of distortions are found for an arbitrary ratio of the distance between atomic steps to the order parameter correlation length. Original Russian Text ? A.I. Morosov, I.A. Morosov, A.S. Sigov, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 7, pp. 1228–1235.     

Specific features of nanosystems based on natural isoferroplatinum

Nanostructuring of natural isoferroplatinum crystals is revealed by atomic-force microscopy for the first time. Typical scales of ～30, 50, and 100 nm are determined and the self-affine character of their relation is established using a wavelet analysis.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.