拟线性椭圆变分不等式的障碍最优控制问题

对拟线性椭圆变分不等式的障碍最优控制问题(即以障碍为控制变量)进行了研究．指标泛函为Lagrange型,其中含有控制变量二阶导数的p次幂,这使得最优性条件的推导颇为不易．对所考虑的问题给出了最优控制的存在性定理以及必要条件．     

一类It型非线性时滞关联随机大系统的分散鲁棒控制

在非线性项满足全局Lipschitz条件下,本文研究了一类It型非线性时滞关联随机大系统的分散鲁棒控制问题.系统的时滞是关于状态和控制输入的.基于Lyapunov泛函及线性矩阵不等式(LMI)的分析方法,得到了无记忆状态反馈控制器使整个时滞关联随机大系统可镇定的充分条件.     

RO-heparin Inhibits L-Selectin-mediated Neutrophils Adhesion to Vascular Endothelium Under Flow Conditions

Introduction Migrationandrecruitmentofleukocytesfromblood toinflammatorylesionsitesaresequentiallyregulated byadhesionmoleculesandtheirreceptors[1].These lectinfamilyplaysamajorroleininitiatingattachement ofneutrophilstotheactivatedendothelium.P selectin,…     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

The Exact Solutions of Some (2 + 1)-Dimensional Integrable Systems

The equivalence of three (2 1)-dimensional soliton equations is proved, and the quite generalsolutionswitha some arbitrary functions of x, t and y respectively are obtained. By selecting the arbitrary functions, many specialtypes of the localized excitations like the solitoff solitons, multi-dromion solutions, lump, and multi-ring soliton solutionsare obtained.     

The Properties of Light Pressure Force with High Order in Laser Fields

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A new method for constructing infinite families of k-tight optimal double loop networks

The double loop network (DLN) is a circulant digraph with n nodes and outdegree 2. DLN has been widely used in the designing of local area networks and distributed systems. In this paper, a new method for constructing infinite families of k-tight optimal DLN is presented. For k = 0,1,…,40, the infinite families of k-tight optimal DLN can be constructed by the new method, where the number nk(t,a) of their nodes is a polynomial of degree 2 in t and contains a parameter a. And a conjecture is proposed.     

146Ce核的八级形变带和准γ带

通过测量²⁵²Cf自发裂变所产生的瞬发γ射线, 对¹⁴⁶Ce核的高自旋结构进行了重新研究, 结果更新了以前报道的能级纲图, 把八级形变集体带扩展到更高的自旋, 并且重新构建了可能的准γ带结构. 此外, 用反射不对称壳模型(RASM)对¹⁴⁶Ce核的八级形变带进行了计算, 低自旋处的计算结果与实验数据符合得很好.     

Concurrence and Wigner-Yanase Skew Information

A measure of entanglement on n qubits is defined in terms of Wigner-Yanase skew information. It is shown that the measure coincides essentially with the concurrence on two qubits. This uncovers the information-theoretic meaning of the concurrence of entangled states.     

硅中铜与电子辐照缺陷的相互作用

本文研究了FZ与CZ硅中铜与电子辐照缺陷的相互作用.实验表明,这种作用使扩铜并经电子辐照的n型FZ硅出现两个未经报道的新的深中心,E(0.043)和E(0.396).前者只存在于FZ硅而不存在于CZ硅.后者在扩铜并经电子辐照的n型FZ和CZ硅中都存在.电子辐照再加适当温度的热处理还可电激活硅中的铜,另外,铜的存在还使硅中双空位的退火温度显著地降低.种种实验表明,在硅中与铜有关的六个主要能级分别对应于六种不同结构的深中心,在这些深中心之中既包含铜又包含点缺陷.其中E(0.043)很可能是铜与间隙硅原子的络合物,而E(0.167)及H(0.411)则很可能是铜与空位的不同形态的络合物.