Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

The Exact Solutions of Some (2 + 1)-Dimensional Integrable Systems

The equivalence of three (2 1)-dimensional soliton equations is proved, and the quite generalsolutionswitha some arbitrary functions of x, t and y respectively are obtained. By selecting the arbitrary functions, many specialtypes of the localized excitations like the solitoff solitons, multi-dromion solutions, lump, and multi-ring soliton solutionsare obtained.     

The Properties of Light Pressure Force with High Order in Laser Fields

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｉｎｒｅｃｅｎｔｙｅａｒｓ,ｂｏｔｈｔｈｅｔｈｅｏｒｅｔｉｃａｌａｎｄｅｘｐｅｒｉｍｅｎｔａｌｉｎｖｅｓｔｉｇａｔｉｏｎｓｏｎｌａｓｅｒｃｏｏｌｉｎｇａｎｄｔｒａｐｐｉｎｇｈａｖｅｂｅｃｏｍｅｏｎｅｏｆｔｈｅｍａｊｏｒｆｉｅｌｄｓｉｎａｔｏｍｉｃ,ｍｏｌｅｃｕｌａｒａｎｄｏｐｔｉｃａｌ ｐｈｙｓｉｃｓ[1～ 8] .Ｔｈｅｄｅｖｅｌｏｐｍｅｎｔｏｆｌａｓｅｒｃｏｏｌｉｎｇａｎｄｔｒａｐｐｉｎｇｔｅｃｈｎｏｌｏｇｙｉｓｉｍｐｏｒｔａｎｔｆｏｒｔｈｅａｐｐｌｉｃａｔｉｏｎｓｓｕ…     

Barrier-free intermolecular proton transfer in the uracil-glycine complex induced by excess electron attachment

The photoelectron spectra (PES) of anions of uracil-glycine and uracil-phenylalanine complexes reveal broad features with maxima at 1.8 and 2.0 eV. The results of ab initio density functional B3LYP and second order M?ller-Plesset theory calculations indicate that the excess electron occupies a π^* orbital localized on uracil. The excess electron attachment to the complex can induce a barrier-free proton transfer (BFPT) from the carboxylic group of glycine to the O8 atom of uracil. As a result, the four most stable structures of the anion of uracil-glycine complex can be characterized as the neutral radical of hydrogenated uracil solvated by the anion of deprotonated glycine. The similarity between the PES spectra for the uracil complexes with glycine and phenylalanine suggests that the BFPT is also operative in the case of the latter anionic species. The BFPT to the O8 atom of uracil may be related to the damage of nucleic acid bases by low energy electrons because the O8 atom is involved in a hydrogen bond with adenine in the standard Watson-Crick pairing scheme. Received 6 April 2002 Published online 13 September 2002     

A new method for constructing infinite families of k-tight optimal double loop networks

The double loop network (DLN) is a circulant digraph with n nodes and outdegree 2. DLN has been widely used in the designing of local area networks and distributed systems. In this paper, a new method for constructing infinite families of k-tight optimal DLN is presented. For k = 0,1,…,40, the infinite families of k-tight optimal DLN can be constructed by the new method, where the number nk(t,a) of their nodes is a polynomial of degree 2 in t and contains a parameter a. And a conjecture is proposed.     

146Ce核的八级形变带和准γ带

通过测量²⁵²Cf自发裂变所产生的瞬发γ射线, 对¹⁴⁶Ce核的高自旋结构进行了重新研究, 结果更新了以前报道的能级纲图, 把八级形变集体带扩展到更高的自旋, 并且重新构建了可能的准γ带结构. 此外, 用反射不对称壳模型(RASM)对¹⁴⁶Ce核的八级形变带进行了计算, 低自旋处的计算结果与实验数据符合得很好.     

Concurrence and Wigner-Yanase Skew Information

A measure of entanglement on n qubits is defined in terms of Wigner-Yanase skew information. It is shown that the measure coincides essentially with the concurrence on two qubits. This uncovers the information-theoretic meaning of the concurrence of entangled states.     

MORPHOLOGY OF BLACK CARBON AEROSOLS AND UBIQUITY OF 50-NANOMETER BLACK CARBON AEROSOLS IN THE ATMOSPHERE

Different-sized aerosols were collected by an Andersen air sampler to observe the detailed morphology of the black carbon （BC） aerosols which were separated chemically from the other accompanying aerosols, using a Scanning Electron Microscope equipped with an Energy Dispersive X-ray Spectrometer （SEM-EDX）. The results indicate that most BC aerosols are spherical particles of about 50 nm in diameter and with a homogeneous surface. Results also show that these particles aggregate with other aerosols or with themselves to form larger agglomerates in the micrometer range. The shape of these 50-nm BC spherical particles was found to be very similar to that of BC particles released from petroleum-powered vehicular internal combustion engines. These spherical BC particles were shown to be different from the previously reported fullerenes found using Matrix-Assisted Laser Desorption/Ionization Time-Of-Flight Mass Spectrometry （MALDI-TOF-MS）.     

System dependence of the correlation function of IMFs in Ar + Sn at 35 MeV/u

The inclusive reduced velocity correlation functions of the intermediate mass fragments were measured in the reactions of ³⁶Ar + ^112,124Sn at 35 MeV/u. The anti-correlation is observed to be stronger in ³⁶Ar + ¹²⁴Sn system than that in ³⁶Ar + ¹¹²Sn. The difference of the correlation functions between the two reactions is mainly contributed by the particle pairs with high momenta. A three body Coulomb repulsive trajectory model is employed to calculate the emission time scale of the IMFs for the two systems. The time scale is 150 fm/c in ³⁶Ar + ¹¹²Sn and 120 fm/c in the ³⁶Ar + ¹²⁴Sn, respectively.     

硅中铜与电子辐照缺陷的相互作用

本文研究了FZ与CZ硅中铜与电子辐照缺陷的相互作用.实验表明,这种作用使扩铜并经电子辐照的n型FZ硅出现两个未经报道的新的深中心,E(0.043)和E(0.396).前者只存在于FZ硅而不存在于CZ硅.后者在扩铜并经电子辐照的n型FZ和CZ硅中都存在.电子辐照再加适当温度的热处理还可电激活硅中的铜,另外,铜的存在还使硅中双空位的退火温度显著地降低.种种实验表明,在硅中与铜有关的六个主要能级分别对应于六种不同结构的深中心,在这些深中心之中既包含铜又包含点缺陷.其中E(0.043)很可能是铜与间隙硅原子的络合物,而E(0.167)及H(0.411)则很可能是铜与空位的不同形态的络合物.