采用直、弯静叶压气机时序效应实验研究

本文实验研究了采用直、弯静叶的某重复级低速压气机在不同时序位置时的总性能及横截面流场特性.在不同流量工况下对压气机整体性能及流场进行了详细测量.结果表明,采用正弯静叶的压气机时序效应相对较弱且喘振裕度有所增加;同时,在压比略有减小的前提下(0.1%级别),凭借消耗扭轴功的大幅F降(3%左右),效率在设计工况下最大可提高...     

O_2/CO_2气氛下焦炭氮转化的实验研究

利用热重-傅里叶红外联用(TG-FTIR)的方法对O2/CO2和O2/Ar气氛下大同煤焦燃烧过程中焦炭氮的转化进行了实验研究.结果表明,两种气氛下煤焦燃烧过程中焦炭氮会转化为HCN、HNCO、N2O等.与O2/Ar气氛下的实验结果相比,O2/CO2气氛下焦炭氮的转化时间延长,含氮气体产物的质量分数也存在差异.热解制焦温...     

甲烷再燃还原NO过程中SO2的交互作用

综合Leeds机理,采用Chemkin程序的PFR模块,以Glarborg实验中的柱塞流反应器作为模拟对象,研究了甲烷再燃还原NO过程中SO2交互作用的影响.利用该模型计算甲烷再燃还原NO的结果与Glarborg的实验结果吻合;存在最佳空气过量系数0.8时甲烷再燃还原NO效率最高.进一步分析SO2对再燃还原NO影响的结...     

中空纤维膜液相微萃取-GC-MS测定水果和蔬菜中三唑类杀菌剂残留量

研究了一种直接快速测定水果和蔬菜等固体样品中5种三唑类杀菌剂残留量的新方法,以气相色谱-质谱联用技术为基础,利用中空纤维膜液相微萃取提取固体样品中目标物。通过实验确定最佳萃取条件为：萃取剂为环己烷,固体样品与水的比例为1：3（总质量为10g）,超声震荡5min后以500r/min的搅拌速率在40℃下萃取20min。萃取后取1μL有机溶剂直接进样进行气相色谱质谱分离检测。在此条件下,水果和蔬菜中的三唑酮和多效唑的线性范围为0.5—25mg/kg,腈菌唑、烯唑醇和丙环唑的线性范围为1—25mg/kg;5种目标物的检出限均低于0.210mg/kg;相对标准偏差在4.7%—8.1%之间。该方法可以用于水果和蔬菜等固体样品中三唑类杀菌剂的快速测定。     

Design and end chamfer simulation of PEFP beam line curved dipole magnets

The design, fabrication and field measurement of 11 DC curved dipole magnets for the PEFP Beam Line have been completed. In this paper, a design method for a complex end chamfer using OPERA-3D is proposed. The conventional method for estimating chamfer shape is extended and applied to a curved dipole magnet by a coordinate transformation. Using the interface with CAD software, the complex end chamfer is modeled and fully determined by 3D simulation to meet the field uniformity requirement. The magnetic field measurement results are in good agreement with the simulation. The design considerations, field simulation results, end chamfer development process and measurement results are presented in detail.     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.