Optical Planar Waveguides in KTiOPO4 Crystals by MeV Oxygen Ion Implantation

We report on the optical planar waveguide formation in KTiOPO4 crystals by single or double oxygen ion implantation at energies of 2.4-3.0 MeV and doses of 1015 ions/cm^2. The dark-line spectroscopy properties are investigated by a prism-coupling method. With an effective refractive index method, the refractive index profiles of the waveguides are reconstructed. The program code TRIM＇98 （transport of ions in matter） is used to simulate the implantation process of oxygen ions into the KTiOPO4 crystal. It is found that an inherent relationship exists between the nuclear damage and the refractive index changes induced by the ion-beam implantation.     

Ground-State Properties of Ca Isotopes and the Density Dependence of the Symmetry Energy

A relativistic mean field model is used to study the ground-state properties of neutron-rich nuclei in Ca isotopes. An additional isoscalar and isovector nonlinear coupling has been introduced in the relativistic mean field model, which could soften the symmetry energy, while keep the agreement with the experimental data. The sensitivity of proton and neutron density distributions and single particle states in Ca isotopes to the additional isoscalarisovector nonlinear coupling term is investigated. We found that the binding energies, the density distributions of single particle levels are strongly correlated with the density dependence of the symmetric energy in nuclear matter.     

Compact Single-Stage Femtosecond Multipass Ti：Sapphire Amplifier at 1 kHz with High Beam Quality

A compact femtosecond Ti：sapphire amplifier system is reported using single-stage multipass configuration with high beam quality. A high dispersion glass stretcher and a pair of double prisms for compression are introduced based on broadband femtosecond seed pulses. The non-grating-based pulse stretcher and compressor are advantageous to increase high beam quality and to reduce the high-order dispersion. A Gaussian filter is used to reduce the gain narrowing effect in amplification. The compact femtosecond Ti：sapphire nine-pass amplifier delivers pulses with a duration of 26 fs and an energy of 800μJ at 7mJ pumping pulses energy at I kHz. The 1-kHz femtosecond amplifier with high beam quality and high stability is very suitable for ultrafast physics research applications, such as attosecond science, ultra-precision micromachining, and THz wave generation.     

Behaviour of Self-Standing CVD Diamond Film with Different Dominant Crystalline Surfaces in Thermal-Iron Plate Polishing

Self-standing CVD diamond films with different dominant crystalline surfaces are polished by the thermal-iron plate polishing method. The influence of the dominant crystalline surfaces on polishing etfficiency is investigated by measuring the removal rate and final roughness. The smallest rms roughness of 0.14 μm is measured with smallest removal rate in the films with the initial （220） dominant crystalline surface. Activation energy for the polishing is analysed by the Arrhenius relation. It is found that the values are 170kJ/mol, 222kJ/mol and 214kJ/mol for the film with three different dominant crystalline surfaces. Based on these values, the polishing cause is regarded as the graphitization-controlling process. In the experiment, we find that transformation of the dominant crystalline surfaces from （111） to （220） always appears in the polishing process when we polish the （111） dominant surface.     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

An Economical Magnetocardiogram System Based on High-To SQUIDs

An economical magnetocardiogram （MCG） system is built in our laboratory. It mainly consists of a MCG data acquisition stage equipped with two high-To superconducting quantum interference device （SQUID） magnetometers, a data processing stage with digital filtering and a one-layer μ-metal magnetically shielded room in conjunction with a high-Tc SQUID based active compensation. Experimental results show that a noise level of pico-tesla in MCG profiles, which is necessary for clinical applications, may be achieved with the system. Moreover, stable and convenient operations of the system are demonstrated with simulating MCG measurements.     

Modulation Frequency Multiplexed Tunable Diode Laser Spectroscopy System for Simultaneous CO, CO2 Measurements

A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at different frequencies, demodulating the signal by a pair of lock-in amplifiers for each gas. Laser beams are combined and detected by one detector after passing through an identical optical path. The experimental results show little performance degradation associated with modulation frequency multiplexing, and no cross-talk between the two multiplexed detection channels is measured.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

扭摆法测物体转动惯量的不确定度分析

扭摆法是测量物体转动惯量的有效方法,其不确定度分析是关键.本文推导了扭摆法测物体转动惯量准确的不确定度传递公式,得到各直接测量量及其不确定度对转动惯量不确定度的影响.并进行了算例分析.结果表明,扭摆法比三线摆测得物体的转动惯量的误差以及不确定度要小很多.这对实验方法的选择和仪器的研制具有重要的实际意义.