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A thorough investigation by means of X-rays has been carried out with the purpose to determine the nature of the ternary phase τ in Al-Cu-Ni alloys. In contrast with the conventional concept of alloy phase which is characterized by a definite type of crystal structure, systematic structure changes are found in the single phase field of τ which occupies quite an extensive area in the isothermal section of the phase diagram at room temperature. There are eight types of structures altogether, all derived from a basic rhombohedron with corners occupied by Al atoms and centres either occupied by the heavy atoms or remaining vacant. The basic rhombohedron is the building stone in the crystal architecture. By transforming the basic rhombohedron into a hexagonal prism in the usual way, all structures may be considered to be built up by stacking together a number of these hexagonal prisms along the triad. The transformation of one structure into another is quite systematic in the way that the number of the stacking stories in the unit cell increases according to the order 10, 11, 12, 13, 14, 15, 16, 17. The atomic arrangements in the different structures are closely related too, in the respect that they are all superstructures due to the presence of ordered vacancies in the rhombohedral centres.The principal factor controlling the formation of these structures has been fully considered. In view of the fact that the change of structure types follows closely with the content of Ni or Cu for alloys of constant Al content, the atomic size factor appears to be unimportant in the formation of these alloys. It has been shown that for alloy phases of the defect lattice type as the r-phase, the most fundamental factor is the average number of valency electrons per structural unit which is the basic rhombohedron in the present case. By assuming Hume-Rothery's valencies, the average number of valency electrons remains remarkably constant throughout the entire phase field, while the electron concentration varies with compositions. It has also been pointed out that for alloy phases where there is no unit cell change, the average number of electrons per structural unit is equivalent to the number of electrons per unit cell, and for alloy phase where there is no defect, this is in effect equivalent to the electron concentration. 相似文献
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在面心立方体金属中间隙原子一般不发生内耗。只有在合金元素(杂质)或空穴周围的间隙原子才会发生微扩散的内耗。因为空穴或合金原子的存在破坏了邻近间隙位置的对称性,在这样位置上的间隙原子才有可能在往复应力作用下发生应力感生微扩散内耗。本文按以上所述两种情况,利用作者之一所作的内耗热力学理论作计算,发现由于合金原子存在而引起的内耗弛豫强度应该与xA(1—xA)·C成正比,xA是合金原子浓度,C是间隙原子浓度。由于空穴存在而引起的内耗强度应与N·1/(B/C2+1/C)成正比,此处N是空穴的浓度,C是间隙原子浓度,B是一常数。在葛庭隧、钱知强两氏对面心立方系锰钢的内耗强度的实验中,内耗强度的数值基本上与合金原子浓度无关。因此,在高锰合金钢中像是空穴所引起内耗的那种机构。同时,可以估计出碳原子落入空穴放出的能量约为0.14eV。但目前实验数据有限,实际上面心合金钢中是何种机构在起主要作用,尚待进一步研究。 相似文献
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莲子蛋白组分二级结构的研究 总被引:2,自引:0,他引:2
对莲子蛋白质进行了Osborne蛋白质分类。采用傅里叶变换红外光谱(FTIR)对清蛋白、球蛋白、醇溶蛋白和谷蛋白进行二级结构分析。应用去卷积和曲线拟合方法对四种蛋白组分的酰胺Ⅰ和Ⅲ带进行分析,清蛋白和球蛋白之间以及醇溶蛋白和谷蛋白之间各相应子峰峰位和二级结构峰面积百分比差异较小,但前两者各相应子峰峰位与后两者略有差异;而前两者各相应二级结构峰面积百分比与后两者有较大差异,特别是前两者的各相应有序结构(α-螺旋+β-折叠)峰面积的百分比明显大于后两者。用0.1 mol.L-1NaCl溶液提取的球蛋白和清蛋白有序结构含量均在55%左右,而醇或碱提的醇溶蛋白和谷蛋白的有序结构含量仅为40%左右,盐提的蛋白质二级结构有序性和稳定性更高。 相似文献
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Enhanced Efficiency of Polymer: Fullerene Bulk Heterojunction Solar Cells with the Insertion of Thin TiO2 Layer near the LiF/A1 Electrode 下载免费PDF全文
The insertion layer of TiO2 between polymer-fullerene blend and LiF/AI electrode is used to enhance the shortcircuit current Isc and fill factor (FF). The solar cell based on the blend of poly[2-methoxy-5-(2'-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and C60 with the modifying layer of TiO2 (about 20nm) shows the open- circuit Voc of about 0.62 V, short circuit current Isc of about 2.35 mA/cm^2, filling factor FF of about 0.284, and the power conversion efficiency (PCE) of about 2.4% under monochromatic light (50Onto) photoexcitation of about 17mW/cm^2. Compared to ceils without the TiO2 layer, the power conversion efficiency increases by about 17.5%. Similar effect is also obtained in cells with the undoped MEH-PPV structure of ITO/PEDOT:PASS/MEH- PPV/(TiO2)LiF/AI. The improved solar cell performance can be attributed to enhanced carrier extraction efficiency at the active layer/electrode interfaces when TiO2 is inserted. 相似文献
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