不同周期数的GaInAs/GaAsP多量子阱太阳能电池

为了研究不同量子阱周期数下GaInAs/GaAsP多量子阱太阳能电池性能的变化规律,利用金属有机化学气相沉积技术(MOCVD)制备了不同周期数的双结多量子阱太阳能电池样品以及无量子阱双结结构的参考样品,利用高分辨率X射线衍射仪(HXRD)和高分辨率透射电镜(TEM)测试了样品的晶体质量,同时在AM0(1×)光谱条件下测试了样品的I-V特性曲线和相应子电池的外量子效率。最终得到了高晶体质量、吸收截止波长在954 nm的Ga_(0.89)In_(0.11)As/GaAs_(0.92)P_(0.08)多量子阱结构,扩展波段的外量子效率最高达到75.18%,电池光电转换效率相对于无量子阱结构提升2.77%。通过对比测试结果发现,随着量子阱结构周期数的增加,太阳能电池在扩展波段(890~954 nm)的外量子效率不断提高,常规波段的短波响应(300~700 nm)会出现下降,长波响应(700~890 nm)会出现上升,短路电流和转换效率相应提升并趋于饱和。     

A Phase-Controlled Optical Parametric Amplifier Pumped by Two Phase-Distorted Laser Beams

We theoretically study the phase characteristic of optical parametric amplification （OPA） or chirped pulse OPA （OPCPA） pumped by two phase-distorted laser beams. In the two-beam-pumped optical parametric amplification （TBOPA）, due to spatial walk-off, both of the pump phase distortions will be partly transferred to signal in a single crystal so as to degrade the signal beam-quality, which will be more serious in high-energy OPCPA. An OPA configuration with a walkoff-compensated crystal pair is demonstrated for reducing the signal phase distortion experienced in the first stage and ensuring the signal phase independent of two pump phase distortions through the second crystal, hence maintaining the signal beam-quality. Such a TBOPA is similar to the conventional quantum laser amplifier by means of eliminating its sensitivity to the phase and number of the pump beams.     

开关图的几个代数性质

首先对开关图的自同构群进行了研究,随即讨论了它的点传递性,并得到Calyley图的开关图依然是Cayley图.     

Comparison between photoluminescence spectroscopy and photoreflectance spectroscopy in CuGaSe2 epilayer

Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.     

ON THE FALSE DEGENERACY OF THE HELMHOLTZ BOUNDARY INTEGRAL EQUATIONS

In this paper, the false degeneracy of the Helmholtz boundary integral equations is examined. A new theory to explain the false degeneracy of the Helmholtz boundary integral equations is given. In this proposed theory, a false degeneracy of the boundary integral equation is explained as finding a non-trivial source distribution such that it results in trivial field quantities inside the domain interested and non-trivial field quantities for its counter part, i.e., outside the domain interested. It is clearly explained that such a false degeneracy is independent of prescribed boundary conditions but dependent on the integral equation one selects. Moreover, the false degeneracy of the integral equation for the interested domain relates to the eigenproblem for its counter part. Under such a unified theory, the fictitious eigenvalue, spurious eigenvalue and pseudo-fictitious eigenvalue can be explained in a simple mathematical frame. It is concluded from our theoretical analysis that a multiply connected domain results in the pseudo-fictitious eigenvalue even the complex-valued formulations are used. In order to eliminate various kinds of false degeneracy, two methods are employed according to the previous research. A unified view of these two methods is provided such that they can be thought to be equivalent from mathematical point of view. Several numerical examples are given to show the validity of current approach.     

零阶贝塞尔函数组成的两个正交系

给出了在常见的函数内积下任意两个零阶贝塞尔函数的内积公式，进而证明了由第一类和第二类零阶贝塞尔函数的线性函数族的正交性以及长度的表达式．     

控制成核生长大尺寸C60，C70单晶

通过改进双温区双温度梯度方法，成功地控制成核密度，分别生长出线度可达6mm和5mm的大尺寸C₆₀，C₇₀单晶，并对其表面形貌和晶体结构进行了研究. 关键词：     

磁场对Ge表面场效应的影响

本文研究了横向磁场对Ge表面交流场效应的影响,提出了与其他作者不同的解释。根据我们的实验结果,可以认为磁场对场效应的影响主要是由于磁浓缩效应引起了样品电导的附加变化,而不是由于霍耳电压改变了表面势垒。并且指出利用这个实验来决定表面复合速度与表面势垒关系的可能性。     

双时因果格林函数的费曼图解法

本文从解析性的讨论出发,应用朗道关系改进Дзялошинский的图解法,建立了双时因果格林函数的费曼图解法,它具有正确的零温权限,并可直接用来计算各种非平衡过程的动力学性质。     

杜仲茎部剥皮后塑料薄膜包裹的效应

本文观察并比较了杜仲茎部剥皮后,完全暴露的与立即包以透明和黑色塑料薄膜的,再生树皮的组织分化过程。结果在暴露的和包以透明塑料薄膜的树干上,新的维管形成层都在较深层的未成熟木质部中发生,而包黑塑料薄膜的,则在愈伤组织与木质部交界处的未成熟木质部或愈伤组织中发生。这种新形成层的早期分化很象原形成层,向内分化出螺纹管胞和导管,向外形成筛胞状分子。