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81.
82.
研究了LaB6在1~10 Pa氮气和氦气中的直流和脉冲放电特性以及放电过程对电极的影响。结果表明,电极直径为5 mm的LaB6氦气放电管在脉冲工作状态下可以长期稳定放电。在脉冲电压为2.2 kV、脉冲宽度10 ms、频率13.3 Hz下,脉冲峰值放电电流超过120 A。氦气放电管在放电过程中,阴极表面有离子的清洗和活化作用,可以使电极的表面逸出功降低,提高放电管的发射能力和稳定性。LaB6作为气体放电电极具有寿命长、延迟时间短、放电电流大等优点,可用于重复强流脉冲气体放电的高压高速开关器件。 相似文献
83.
2-Amino-2,4-anhydro-psicofuranose derivative was synthesized starting from d-fructose. 相似文献
84.
A new formulation derived from thermal characters of inclusions and host films for estimating laser induced damage threshold has been deduced. This formulation is applicable for dielectric films when they are irradiated by laser beam with pulse width longer than tens picoseconds. This formulation can interpret the relationship between pulse-width and damage threshold energy density of laser pulse obtained experimentally. Using this formulation, we can analyze which kind of inclusion is the most harmful inclusion. Combining it with fractal distribution of inclusions, we have obtained an equation which describes relationship between number density of inclusions and damage probability. Using this equation, according to damage probability and corresponding laser energy density, we can evaluate the number density and distribution in size dimension of the most harmful inclusions. 相似文献
85.
ONOO-活性氧的荧光光谱分析进展 总被引:1,自引:0,他引:1
系统介绍了ONOO^-活性氧的化学性质,并对其参与的主要化学反应进行了分类和总结.同时,比较了近年来用于ONOO^-检测的方法,并重点论述了荧光光谱分析方法尤其是酶催化动力学荧光分析法在检测ONOO^-活性氧方面的优势和最新的研究进展. 相似文献
86.
Effects of Processing Parameters on Microstructure and Properties of Nanoscale ZrC/ZrB2 Multilayered Coatings
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ZrC/ZrB2 multilayered coatings with bilayer periods of 3.5-40nm are synthesized by rf magnetron sputtering. Analyses of x-ray diffraction, scanning electron microscopy and nanoindentation indicate that multilayered coatings possess much higher hardness and greater fracture resistance than monolithic ZrC and ZrB2 coatings. A maximum hardness (41.TCPa) and a critical fracture load (73.7mN) are observed in the multilayer with A = 32 nm deposited at the substrate bias -40 V. Higher residual stress built in the ZrC layer can be released by periodic insertion of ZrB2 into the ZrC layer. A clear multilayered structure with mixed ZrB2(001), ZrB2 (002) and ZrC (111) orientations should be responsible for the enhanced mechanical properties. 相似文献
87.
Surface modifications were performed on the indium tin oxide (ITO) substrates for polymer light-emitting devices, using the different treatment methods including solvent cleaning, hydrochloric acid treatment and oxygen plasma. The influence of modifications on the surface properties of ITO electrodes were investigated by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), contact angle, and four-point probe. The surface energies of the ITO substrates were also calculated from the measured contact angles. Experimental results demonstrate that the surface properties of the ITO substrates strongly depend on the modification methods, and oxygen plasma more effectively improves the ITO surface properties compared with the other treatments. Furthermore, the polymer light-emitting electrochemical cells (LECs) with the differently treated ITO substrates as device electrodes were fabricated and characterized. It is observed that the surface modifications on ITO electrodes have a certain degree of influence upon the injection current, luminance and efficiency, but hardly upon the turn-on voltages of current injection and light emission which are close to the measured energy gap of electroluminescent polymer. Oxygen plasma treatment on the ITO electrode yields the better performance of the LECs, due to the improvement of interface formation and electrical contact of the ITO electrode with the polymer blend in the LECs. 相似文献
88.
We evaluate the practical relevance of two measures of conic convex problem complexity as applied to second-order cone problems solved using the homogeneous self-dual (HSD) embedding model in the software SeDuMi. The first measure we evaluate is Renegar's data-based condition measure C(d), and the second measure is a combined measure of the optimal solution size and the initial infeasibility/optimality residuals denoted by S (where the solution size is measured in a norm that is naturally associated with the HSD model). We constructed a set of 144 second-order cone test problems with widely distributed values of C(d) and S and solved these problems using SeDuMi. For each problem instance in the test set, we also computed estimates of C(d) (using Peña’s method) and computed S directly. Our computational experience indicates that SeDuMi iteration counts and log (C(d)) are fairly highly correlated (sample correlation R = 0.675), whereas SeDuMi iteration counts are not quite as highly correlated with S (R = 0.600). Furthermore, the experimental evidence indicates that the average rate of convergence of SeDuMi iterations is affected by the condition number C(d) of the problem instance, a phenomenon that makes some intuitive sense yet is not directly implied by existing theory. 相似文献
89.
X.T Zhang Y.C LiuZ.Z Zhi J.Y ZhangY.M Lu D.Z ShenW Xu X.W FanX.G Kong 《Journal of luminescence》2002,99(2):149-154
The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect. 相似文献
90.
通过考虑同类核子相干对间的四极相互作用,在IBM2中对Ce偶-偶同位素^128Ce-^138Ce的低激发态能谱和E2跃迁几率及分支比进行了理论分析,计算结果有效地改善了IBM中这些核的γ带能谱的Staggering现象描述,与实验观察到的低激发态结果基本一致。 相似文献