近红外光谱相关系数法用于快速检测药品的质量

对近红外光谱相关系数法检测药品质量变化的效果进行了研究,并考察了相关系数方法对同一品种药品来自不同厂家生产的样品的区分能力进行了计算,还研究了在不同仪器上、由不同人员测定光谱时相关系数方法的识别能力。本文还对计算相关系数时的光谱预处理方法和谱段等参数进行了探讨,提供了建议性的参数条件,为近红外光谱相关系数方法用于药品质量快速分析提供参考。     

FTIR－PAS技术在卟啉类化合物中的应用（Ⅳ）──稀土乙酰丙酮－meso－四－（α－萘基）四苯并卟啉配合物的红外光谱

研究了ｍｅｓｏ－四－（α－萘基）四苯并卟啉及其Ｄｙ，Ｈｏ，Ｅｒ，ＴＭ，Ｙｂ，Ｌｕ乙酸丙酮形成的配合物在３６００～２２０ｃｍ－１范围内的傅里叶变换红外光声光谱（ＦＴＩＲ－ＰＡＳ），对主要谱带进行了经验归属。结果表明，四－（ａ－萘基）四苯并卟啉与稀土乙酰丙酮配合物中稀土金属离子配位削弱了乙酰丙酮环上Ｍ—Ｏ键的伸缩振动，使此谱带向低波数位移。金属敏感港带出现在～１５１３，～１３２３～１０９０，１０５３和～２５０ｃｍ－１。     

Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.     

Teleportation with Tripartite Entangled State via Thermal Cavity

Teleportation schemes with a tripartite entangled state in cavity QED are investigated. The schemes do not need Bell state measurements and the successful probabilities reach optimality. In addition, the schemes are insensitive to both the cavity decay and the thermal field. We first consider two teleportation schemes via a tripartite GHZ state. The first one is a controlled one for an unknown single-qubit state. The second scheme is teleportation of unknown two-atom entangled state. Then we consider teleporting of single-qubit arbitrary state via a tripartite W state.     

分光光度法研究芦丁-铜配合物及其自由基清除活性

芦丁是天然多羟基黄酮苷 ,具有广泛的药理作用。分光光度法研究了芦丁与金属铜离子的配位性能 ,在 KH2 PO4- Na OH(p H=7.38)缓冲溶液中 ,芦丁与 Cu( Ⅱ )能形成 1∶ 1的配合物 ,并具有良好清除自由基活性。     

开边界条件下一类新Hubbard模型的精确解

用坐标Bethe ansatz方法详细研究了开边界条件下一类新Hubbard模型的可积性问题. 得到了系统的能谱、可积边界条件和Bethe ansatz方程.     

一种测量无规则裂缝宽度的量化模型与实现

建立了一种测量无规则裂缝宽度的量化模型,提出了一种真伪裂缝区域分割新方法.该方法通过边缘检测并利用形态学膨胀运算,在待测裂缝的两侧边缘区域选取近似等量的目标像素和背景像素后,设置门限以自适应选取最佳分割阈值,提取出裂缝区域,进而提取裂缝的走势及边缘像素,用建立的量化模型,即可实现宽度测量.该测量方法能有效克服裂缝图像的噪音较大、裂缝不规则等弊端,去除裂缝图像的伪裂缝区域,测量结果的重复准确度在0.1mm以内.实验结果表明,该方法有效地实现了裂缝宽度的准确测量,具有较强的适应性.     

Effect on Intensity Correlation Time by Input Signal in a Single-Mode Laser with Bias Signal Modulation

The effect on intensity correlation time T by input signal is studied for gain-noise model of a single-mode laser driven by colored pump noise and colored quantum noise with colored cross-correlation with a bias signal modulation in this paper. By using the linear approximation method, we detect that there exists maximum （i.e., resonance） in the curve of the intensity correlation time T upon bias current io when the noise correlation coefficient λ is positive; and there exists minimum （i.e., suppression） in the T-io curve when λ is negative. And whenλ is zero, T increases monotonously with increasing io. Furthermore, the curve of T upon the signal frequency Ω is also studied. Our study shows that no matter what the value of λ is, there exists minimum （i.e., suppression） in the T-Ω curve.     

Parallel Molecular Dynamics Simulations of Ejection from the Metal Cu and Al Under Shock Loading

Large-scale non-equilibrium molecular dynamics simulations are used to investigate the ejection of the metal under a shock loading. The present work focus on the dynamic process of ejection from the metal Cu and Al surface groove under shock loading, using parallel MD implementation and the Morse potential. The ejected mass coefficient and the size distribution of ejected particles （cluster for atoms） are investigated with changes of the half-angle or the depth of groove and shock strength.     

场效应器件低温特性与低噪声放大器

高温超导滤波器与低噪声放大器(LNA)组成的射频接收机前端设备具有高选择性、高灵敏度和极低的噪声,因而展现出广阔的应用前景.本文研究了场效应器件的低温物理特性和电学参数,研制了一种适用于高温超导微波接收系统的低温低噪声放大器,在60K工作温度下,具有很好的噪声特性.包括高电子迁移率场效应晶体管在内的元件参数均在60K温度下进行了实际测量.放大器的各项指标与设计值吻合,工作频段为800MHz～850MHz,增益大于18dB,输入输出驻波比小于1.2,噪声系数小于0.22dB.