Synthesis of ordered Ge-Si heterostructures containing ultrasmall germanium nanoclusters

Different techniques for the fabrication of structures containing ensembles of ultrasmall germanium nanoclusters distributed with a high density over the substrate surface are discussed. How to control the morphology and ordering of these ensembles is also discussed.     

Electromechanical properties of Pb<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> piezoelectric crystals grown from solution in a melt

Single crystals of lead gallium germanate Pb₃Ga₂Ge₄O₁₄ are grown from their own solution melts. The propagation of bulk acoustic waves is investigated, and the elastic, piezoelectric, and dielectric constants are calculated. The temperature dependences of the dielectric constants of this compound are analyzed.     

Microstructure and mechanical characteristics of nanodiamond-SiC compacts

Superhard nanodiamond-SiC ceramics are prepared by infiltrating liquid Si into porous nanodiamond compacts under pressure. Synthesized samples are 2.2 mm thick and 3–4 mm in diameter. The effect of particle size of dynamically synthesized nanodiamond powders on silicon infiltration and SiC phase formation is studied. It is established that silicon does not penetrate into the pores of nanodiamond powders if the original particle size is smaller than 0.5–1.0 μm. The critical pore size for infiltration is 100–200 nm. A study of the microstructure of the samples showed the presence of the nanometer-and submicron-scale SiC phase. The ultrasound velocities are measured in the prepared compacts, and the elastic moduli are calculated. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 4, 2004, pp. 734–736. Original Russian Text Copyright ? 2004 by Ekimov, Gromnitskaya, Mazalov, Pal’, Pichugin, Gierlotka, Palosz, Kozubowski.     

Plasmon-induced terahertz absorption and photoconductivity in a grid-gated double-quantum-well structure

The terahertz absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effect transistor structure is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of terahertz photo-conductivity in such a structure.     

Magnetization vector field in a uniaxial ferromagnetic film

Technical Physics - Analytical models for the magnetization vector field B m in a uniaxial ferromagnetic film are studied. Some of them are found to closely approximate B m even if the quality...     

Diffusion of a low-soluble impurity in a solid matrix

An analytical expression for the concentration profile of a low-soluble diffusant in a sample is derived for a high-capacity diffusion source. The model is checked by determining the diffusion coefficient of yttrium in beryllium.     

On the Nature of Radiation Resistance in Compensated Silicon

Russian Physics Journal -     

Special Theory of Relativity in Electrodynamics

A method of teaching of one of the divisions of electrodynamics devoted to relativity theory is suggested. The presentation is based on the four-dimensional formalism, which allows a number of fundamental physical phenomena to be considered from a unified position. The content is in full conformity with the approved standard programs for students and postgraduates of radio physical and radio technical specialities of universities. The methods can be useful to the teachers, scientific workers, and engineers concerned with other directions and specialities.     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.