Effect of oxyfluorination on gas sensing behavior of polyaniline-coated multi-walled carbon nanotubes

Polyaniline-coated multi-walled carbon nanotubes were prepared by in situ chemical polymerization method for the novel sensing materials of ammonia gas. The thickness of the polyaniline coatings was controlled by the oxyfluorination treatment on the multi-walled carbon nanotubes. The oxyfluorination with higher oxygen content produced the more hydrophilic functional groups on the surface of multi-walled carbon nanotubes. Both the resistivity change and the response time were significantly improved with high repeatability using the more hydrophilic multi-walled carbon nanotubes which were modified with oxyfluorination.     

In-situ strain effect on extrinsic transport of polycrystalline La0.7(Ca,Sr)0.3MnO3 films

The spin-polarised transport in ferromagnetic polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ films on piezoelectric substrate has been investigated. The systematic study involved in finding the effect of in-situ strain on extrinsic electrical transport of various thick polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ thin films. The in-situ strain in the manganite polycrystalline thin film is achieved by applying an electric field to the piezoelectric substrate 0.72 Pb(Mg_1/3Nb_2/3)O₃-0.28 PbTiO₃ (PMN-PT). A reversible strain of about 0.11% is acquired with an application of 10 kV/cm to the piezoelectric substrate. A typical drop in resistance at low magnetic fields has been found in all the polycrystalline manganite films. The effect of reversible strain versus the resultant strain gauges was discussed in all the polycrystalline films. At low temperatures, the effect of strain on low-field magnetoresistance and high-field magnetoresistance was found to be negligible. Further, the results are compared with the transport in manganite films deposited on step edge junctions.     

A novel polyol method to synthesize colloidal silver nanoparticles by ultrasonic irradiation

A polyol synthesis of silver nanoparticles in the presence of ultrasonic irradiation was compared with other configurations (at ambient temperature, 120 °C, and 120 °C with injected solutions) in the absence of ultrasonic irradiation in order to obtain systematic results for morphology and size distribution. For applying ultrasonic irradiation, rather fine and uniform spherical silver particles (21 ± 3.7 nm) were obtained in a simple (at ambient temperature without mechanical stirring) and fast (within 4 min, 3.61 × 10⁻³ mol min⁻¹) manner than other cases (at ambient temperature (for 8 h, 0.03 × 10⁻³ mol min⁻¹): 86 ± 16.8 nm, 120 °C (for 12 min, 1.16 × 10⁻³ mol min⁻¹): 64 ± 14.9 nm, and 120 °C with injected solutions (during 12 min): 35 ± 6.8 nm; all other cases contained anisotropic shaped particles). Even though the temperature of polyol reaction reached only at 80 °C (<120 °C) in the presence of ultrasonic irradiation, a uniform mixing (i.e. enhanced collision between silver particle and surrounding components) by ultrasonic irradiation might induce a better formation kinetics and morphological uniformity.     

Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer

We discuss the role of the Al interlayer in the suppression of pinhole formations and also look at the polarity transition of the AlN layers from N-polarity to Al-polarity when this Al interlayer is present. The AlN layers were grown by molecular beam epitaxy on an AlN nucleation layer. A thin Al interlayer was deposited on the initial nucleated AlN layer after the nitridation of the Al-soaked Si (111) substrates. The AlN layer with an Al interlayer showed a relatively smooth surface with a reduced density of pinholes compared with the AlN layer grown without an Al interlayer. In addition, the AlN layer with an Al interlayer showed some stacking faults in the interface between the Si substrate and the A1N layer. We also identify the polarity change of the AlN layer after the insertion of a thin Al interlayer from N-polarity to Al-polarity by chemical etching. A simple model is constructed to explain the polarity change and the pinhole suppression due to the Al interlayer.     

Branching fractions for psi(2S)-to-J/psi transitions

We describe new measurements of the inclusive and exclusive branching fractions for psi(2S) transitions to J/psi using e(+)e(-) collision data collected with the CLEO detector operating at CESR. All branching fractions and ratios of branching fractions reported here represent either the most precise measurements to date or the first direct measurements. Indirectly and in combination with other CLEO measurements, we determine B(chi(cJ) --> gamma(J/psi)) and B[psi(2S) --> light hadrons].     

Ultraviolet resonance Raman spectroscopy of a β‐sheet peptide: a model for membrane protein folding

The partitioning of a hydrophobic hexapeptide, N‐acetyl‐tryptophan‐pentaleucine (AcWL5), into self‐associated β‐sheets within a vesicle membrane was studied as a model for integral membrane protein folding and insertion via vibrational and electronic spectroscopy. Ultraviolet resonance Raman spectroscopy allows selective examination of the structures of amino acid side chains and the peptide backbone and provides information about local environment and molecular conformation. The secondary structure of AcWL5 within a vesicle membrane was investigated using 207.5‐nm excitation and found to consist of β‐sheets, in agreement with previous studies. The β‐sheet peptide shows enhanced Raman scattering cross‐sections for all amide modes as well as extensive hydrogen‐bonding networks. Tryptophan vibrational structure was probed using 230‐nm excitation. Increases in Raman cross‐sections of tryptophan modes W1, W3, W7, W10, W16, W17, and W18 of membrane‐incorporated AcWL5 are primarily attributed to greater resonance enhancement with the B_b electronic transition. The W17 mode, however, undergoes a much greater enhancement than is expected for a simple resonance effect, and this observation is discussed in terms of hydrogen bonding of the indole ring in a hydrophobic environment. The observed tryptophan mode frequencies and intensities overall support a hydrophobic environment for the indole ring within a vesicle, and these results have implications for the location of tryptophan in membrane protein systems. Copyright © 2009 John Wiley & Sons, Ltd.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal–oxide–semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C–V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C–V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.     

Temperature dependence of the magnetization of canted spin structures

Numerous studies of the low-temperature saturation magnetization of ferrimagnetic nanoparticles and diamagnetically substituted ferrites have shown an anomalous temperature dependence. It has been suggested that this is related to freezing of canted magnetic structures. We present models for the temperature dependence of the magnetization of a simple canted spin structure in which relaxation can take place at finite temperatures between spin configurations with different canting angles. We show that the saturation magnetization may either decrease or increase with decreasing temperature, depending on the ratio of the exchange coupling constants. This is in agreement with experimental observations.     

Luminescence enhancement of Eu-doped calcium magnesium silicate blue phosphor for UV-LED application

(Ca_1−x,Eu_x)MgSi_2yO_6+δ blue phosphor was prepared by spray pyrolysis and the photoluminescence properties were optimized by controlling concentration of Si element and the activator content. At y=1.0, the concentration quenching in the luminescent intensity appeared when the Eu²⁺ content (x) was 0.01 (1 at%). Such quenching concentration was changed with the concentration of silicon (y), which was increased with an increase in the quantity of excess Si (y>1.0). The highest luminescent intensity was achieved when the Eu²⁺ content (x) and the Si concentration (y) were 0.04 and 1.3, respectively. According to X-ray diffraction (XRD) analysis, the tetragonal SiO₂ phase was formed as a minor phase when the y value was larger than 1.3. The formation of SiO₂ phase, however, did not reduce but increased the luminescent intensity when the Eu²⁺ content was optimized again. As a result, the luminescent intensity of the phosphor particles optimized in the content of both Si and Eu²⁺ was about 150% improved compared with that of the CaMgSi₂O₆:Eu sample (x=0.01, y=1.0).