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Magnetic nanocomposites of Sm(Co1−xFex)5/Fe3O4 (x≈0.1) with the core/shell type structure were successfully fabricated using a two-step polyol process, where as-prepared SmCo5(1−x) nanoparticles were used as seeds for the ferrite coating. The core/shell composites are quite stable in air and show a typical hysteric behavior of single component, yielding an enhanced coercivity of 2.2 kOe with a saturated magnetization of 130 emu/g at 5 T. The magnetization data clearly reveal the presence of effective exchange coupling between the hard-magnetic Sm(Co1−xFex)5 core and soft-magnetic Fe3O4 shell, suggestive of a single-phase structure rather than a distinctive two-phase one. 相似文献
225.
Lee KI Joo SJ Lee JH Rhie K Kim TS Lee WY Shin KH Lee BC LeClair P Lee JS Park JH 《Physical review letters》2007,98(10):107202
Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30 K. 相似文献
226.
M. S. Lee C. J. Lee K. M. Rezaul Y. W. Kwak D.H. Lee 《光散射学报》2005,17(3):210-211
Silvernanoparticleshaveprovidedconsider ableinterestbecauseoftheirpotentialapplications inareassuchasforfightingagainstalltypesof diseases,whethercausedbygerms,viruses,bac teria,allergensorpathogens.Atthesametime, silvernanoparticleshaveattractedconside… 相似文献
227.
Structure and electrical transport properties of bismuth thin films prepared by RF magnetron sputtering 总被引:1,自引:0,他引:1
Bismuth thin films were prepared on glass substrates with RF magnetron sputtering and the effects of deposition temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth and the coalescence of grains were observed above 393 K with field emission secondary electron microscopy. Continuous thin films could not be obtained above 448 K because of the segregation of grains. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility in exponential ways until 403 K. Resistivity of sputter deposited bismuth films has its minimum (about 0.7 × 10−3 Ω cm) in range of 403-433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to the cancellation of the decrease of carrier density and the increase of mobility. However, the abrupt change of electrical properties of film annealed above 523 K was observed, which is caused by the oxidation of bismuth layer. 相似文献
228.
A. Sagisaka A.S. Pirozhkov H. Daido A. Fukumi Z. Li K. Ogura A. Yogo Y. Oishi T. Nayuki T. Fujii K. Nemoto S. Orimo M. Nishiuchi Y. Hayashi M. Mori M. Kado S. Nakamura A. Noda I.W. Choi J.H. Sung D.-K. Ko J. Lee 《Applied physics. B, Lasers and optics》2006,84(3):415-419
A two-color interferometer for preformed plasma characterization is developed. We observe the electron density distribution of preformed plasmas on a 5 μm-thick copper target irradiated with a high-intensity Ti:sapphire laser. The two-color interferometer extended the observable electron density region using a fundamental (800 nm) probe beam to cover the lower density region and a second harmonic (400 nm) probe beam to cover the higher density region, simultaneously. This characterization of the electron density distribution of preformed plasmas with femtosecond time resolution significantly contributes to the understanding of high-intensity laser–thin-foil interactions during high-energy electron, ion, and X-ray generation. PACS 52.38.-r; 52.50.Jm; 52.70.-m 相似文献
229.
N.D. Tho N. Chau S.C. Yu H.B. Lee N.D. The L.A. Tuan 《Journal of magnetism and magnetic materials》2006
Effect of annealing on the soft magnetic properties of Fe73.5Si13.5B9Nb3Au1 amorphous ribbon has been investigated by means of structure examination, magnetoimpedance ratio (MIR) and incremental permeability ratio (PR) spectra measured in the frequency range of 1–10 MHz at a fixed current of 10 mA X-ray diffraction analysis showed that the as-cast sample was amorphous and it became nanocrystalline under a proper heat treatment. When annealing amorphous alloy at 530 °C for 30, 60, 90 min, soft magnetic properties have been improved drastically. Among the samples investigated, the sample annealed at 530 °C for 90 min showed the softest magnetic behavior. The MIR and PR curves revealed the desirable changes in anisotropy field depending upon annealing. 相似文献
230.
Bidirectional transfer of quantum information for unknown photons via cross-Kerr nonlinearity and photon-number-resolving measurement 下载免费PDF全文
We propose an arbitrary controlled-unitary(CU) gate and a bidirectional transfer scheme of quantum information(BTQI) for unknown photons.The proposed CU gate utilizes quantum non-demolition photon-number-resolving measurement based on the weak cross-Kerr nonlinearities(XKNLs) and two quantum bus beams;the proposed CU gate consists of consecutive operations of a controlled-path gate and a gathering-path gate.It is almost deterministic and is feasible with current technology when a strong amplitude of the coherent state and weak XKNLs are employed.Compared with the existing optical multi-qubit or controlled gates,which utilize XKNLs and homodyne detectors,the proposed CU gate can increase experimental realization feasibility and enhance robustness against decoherence.According to the CU gate,we present a BTQI scheme in which the two unknown states of photons between two parties(Alice and Bob) are mutually swapped by transferring only a single photon.Consequently,by using the proposed CU gate,it is possible to experimentally implement the BTQI scheme with a certain probability of success. 相似文献