Electronic structure of the trilayer cuprate superconductor Bi(2)Sr(2)Ca(2)Cu(3)O(10+delta)

The low-energy electronic structure of the nearly optimally doped trilayer cuprate superconductor Bi(2)Sr(2)Ca(2)Cu(3)O(10+delta) is investigated by angle-resolved photoemission spectroscopy. The normal state quasiparticle dispersion and Fermi surface and the superconducting d-wave gap and coherence peak are observed and compared with those of single- and bilayer systems. We find that both the superconducting gap magnitude and the relative coherence-peak intensity scale linearly with T(c) for various optimally doped materials.     

Measurements of the cross section for e(+)e(-) --> hadrons at center-of-mass energies from 2 to 5 GeV

We report values of R = sigma(e(+)e(-)-->hadrons)/sigma(e(+)e(-)-->mu(+)mu(-)) for 85 center-of-mass energies between 2 and 5 GeV measured with the upgraded Beijing Spectrometer at the Beijing Electron-Positron Collider.     

Measurement of the superluminal group velocity of an ultrashort Bessel beam pulse

The superluminal group velocity of an ultrashort optical Bessel beam pulse is measured over its entire depth of field, corresponding to approximately 2x10(4) optical wavelengths. The method used is to measure the traveling ionization front induced by the pulse.     

Magnetic Properties of Nanoparticles of Antiferromagnetic Materials

Hyperfine Interactions - The magnetic properties of antiferromagnetic nanoparticles have been studied by Mössbauer spectroscopy and neutron scattering. Temperature series of Mössbauer...     

迈克尔逊干涉仪中补偿板与干涉条纹

通过分析缺失补偿板的迈克尔逊干涉仪中的附加光程差,推出干涉条纹满足的方程式,并用计算机模拟了动镜移动过程中变化的干涉条纹,与实验结果相一致.     

聚合物纳米孔隙增透膜制备工艺的研究

论述了聚合物纳米孔隙增透膜的制备工艺流程,分析了聚合物材料分子量、实验环境温度和湿度、溶剂挥发性等条件对纳米孔隙增透膜的影响。研究表明,聚合物材料分子量的增大、温度的降低、湿度的升高以及采用挥发性弱的溶剂都将导致增透膜孔隙尺寸的增大,孔隙越大其对光的散射损耗就会增大,所以增透膜的透过率就越低。通过大量的试验分析得出一组较理想的工艺参量:使用低分子量的聚合物材料(小于15 kg/mol),环境温度大于25℃、环境相对湿度小于30%,在采用低沸点的溶剂如四氢呋喃等措施下可有效降低增透膜散射损耗。     

新型高色纯度弱电流猝灭性蓝色有机发光器件

以ADN为基质,分别以不同掺杂剂制备了四种蓝色有机发光器件,器件结构为:CuPc(12 nm)/NPB(40 nm)/AND∶Dopant(50 nm)/Alq(12 nm)/LiF(4 nm)/Al。掺杂剂有:BCzVB(amino-substituted distyrylarylenederivatives)、TBPe、BCzVBi和DSA-ph四种。研究了最佳掺杂浓度以及器件的亮度、电流密度、效率和色坐标等电学特性和光学特性。其中掺杂BCzVB制备了色纯度高、低电流猝灭性的蓝色有机发光器件,色坐标达到x=0.146,y=0.162,最大亮度为11600 cd/m2(15 V),电流效率为2.8 cd/A,流明效率为1.79 lm/W;以ADN为基质,分别以TBPe、BCzVBi和DSA-ph为掺杂剂,制备了另外三种对比器件。器件ADN∶TBPe色坐标为x=0.162,y=0.222(蓝绿光),效率随电流的增加而降低很快;器件ADN∶BczVBi有较好的色纯度(色坐标:x=0.164,y=0.146),但电流效率较低:2.03 cd/A,效率随电流的增加降低幅度也较快。器件ADN∶DSA-ph效率较高为8 cd/A,效率随电流增加变化幅度不大,但色纯度比较差(x=0.153,y=0.306),适合于做白色有机发光器件。     

强激光在窄通道中传播的理论研究

在考虑相对论和有质动力非线性以及全局电量守衡的前提下,分析了强激光在冷等离子体窄通道中稳定传播的情况。采用较为简化的二维理论模型,给出了描述激光和通道横向结构的解,对不同通道宽度、通道密度、激光强度和电磁模式等进行了讨论,分析了其对激光在等离子体通道中传播的影响。分析发现,在存在预通道的情况下,当等离子体通道的密度大于临界密度很多时(例如20倍临界密度),即使是在激光波长量级的通道中,激光仍然可以传播。通道越宽,等离子体密度越小;激光强度越大越容易传播。在同样的通道和传输情况下,TE0模传输所需要的激光强度比TE1模要小。     

Entanglement in a system of two two-level atoms interacting with a single-mode field

We investigate the entanglement in a system of two coupling atoms interacting with a single-mode field by means of quantum information entropy theory. The quantum entanglement between the two atoms and the coherent field is discussed by using the quantum reduced entropy, and the entanglement between the two coupling atoms is also investigated by using the quantum relative entropy. In addition, the influences of the atomic dipole--dipole interaction intensity and the average photon number of the coherent field on the degree of the entanglement is examined. The results show that the evolution of the degree of entanglement between the two atoms and the field is just opposite to that of the degree of entanglement between the two atoms. And the properties of the quantum entanglement in the system rely on the atomic dipole--dipole interaction and the average photon number of the coherent field.     

氢离子辐照纯钒中形成的位错环

钒合金作为聚变堆候选材料, 其辐照损伤行为一直是关注的重点. 研究辐照时形成的位错环的性质, 其意义在于揭示纯钒中辐照空洞的长大机理. 这种机理表现为不同类型位错环对点缺陷吸收的偏压不同, 从而影响金属的辐照肿胀. 本文利用加速器对纯钒薄膜样品进行氢离子辐照, 然后, 利用透射电镜的inside-outside方法分析氢离子辐照所形成的位错环的类型. 结果表明, 在氢离子辐照纯钒中没有发现柏氏矢量b=<110>的位错环, 只有柏氏矢量b=1/2<111>和b=<110>的位错环, 这两种位错环的惯性面处于{110}-{112}之间. 能确定性质的位错环全部为间隙型位错环, 未发现空位型位错环.